Single FETs, MOSFETs

Results: 16
Manufacturer
Infineon TechnologiesRohm SemiconductorSTMicroelectronicsVishay Siliconix
Series
-CoolMOS™CoolMOS™ C7CoolMOS™ CFD7CoolMOS™ P7CoolSiC™EFMDmesh™ VStrongIRFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
200 V600 V650 V700 V1200 V
Current - Continuous Drain (Id) @ 25°C
12.5A (Tc)35A (Tc)37A (Tc)39A (Tc)42A (Tc)46A (Tc)47A (Tc)48A (Tc)50A (Tc)52A (Tc)60A (Tc)61A (Tc)76A (Tc)182A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V15V18V
Rds On (Max) @ Id, Vgs
6.6mOhm @ 82A, 10V37mOhm @ 29.5A, 10V40mOhm @ 24.9A, 10V41mOhm @ 24.8A, 10V45mOhm @ 22.5A, 10V45mOhm @ 24.9A, 10V45mOhm @ 44A, 10V52mOhm @ 23A, 10V59mOhm @ 20A, 15V60mOhm @ 15.9A, 10V63mOhm @ 21A, 10V70mOhm @ 30A, 10V74mOhm @ 16.7A, 18V78mOhm @ 13A, 18V
Vgs(th) (Max) @ Id
3.5V @ 150µA3.5V @ 3mA3.9V @ 2.7mA4V @ 1.08mA4V @ 1.24mA4V @ 1.25mA4V @ 1.48mA4V @ 270µA4V @ 590µA4V @ 800µA4.5V @ 1.24mA5V @ 250µA5.6V @ 6.67mA5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
16.4 nC @ 10 V28 nC @ 18 V51 nC @ 10 V52 nC @ 15 V58 nC @ 18 V68 nC @ 10 V90 nC @ 10 V93 nC @ 10 V98 nC @ 10 V101 nC @ 10 V102 nC @ 10 V107 nC @ 10 V121 nC @ 10 V190 nC @ 10 V
Vgs (Max)
±16V+20V, -10V+20V, -2V±20V+22V, -4V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
517 pF @ 400 V852 pF @ 500 V930 pF @ 400 V1900 pF @ 800 V2180 pF @ 400 V2850 pF @ 400 V3380 pF @ 100 V3891 pF @ 400 V4200 pF @ 100 V4340 pF @ 400 V4975 pF @ 400 V5243 pF @ 400 V6800 pF @ 100 V6800 pF @ 25 V
FET Feature
-Current Sensing
Power Dissipation (Max)
59.4W (Tc)129W (Tc)133W (Tc)162W (Tc)165W (Tc)201W (Tc)227W (Tc)228W (Tc)250W (Tc)255W (Tc)278W (Tc)415W (Tc)431W (Tc)556W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO247-3PG-TO247-3-1PG-TO247-3-41PG-TO247-4-1PG-TO252-3TO-247TO-247ACTO-247N
Package / Case
TO-247-3TO-247-4TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
16Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IPD70R360P7SAUMA1
MOSFET N-CH 700V 12.5A TO252-3
Infineon Technologies
106,095
In Stock
1 : ¥5.58000
Cut Tape (CT)
2,500 : ¥2.96870
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
700 V
12.5A (Tc)
10V
360mOhm @ 3A, 10V
3.5V @ 150µA
16.4 nC @ 10 V
±16V
517 pF @ 400 V
-
59.4W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO247-3
IPW60R080P7XKSA1
MOSFET N-CH 600V 37A TO247-3
Infineon Technologies
878
In Stock
1 : ¥47.70000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
37A (Tc)
10V
80mOhm @ 11.8A, 10V
4V @ 590µA
51 nC @ 10 V
±20V
2180 pF @ 400 V
-
129W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
TO-247-3 AC EP
IPW60R045P7XKSA1
MOSFET N-CH 650V 61A TO247-3-41
Infineon Technologies
920
In Stock
1 : ¥63.87000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
61A (Tc)
10V
45mOhm @ 22.5A, 10V
4V @ 1.08mA
90 nC @ 10 V
±20V
3891 pF @ 400 V
-
201W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-3 AC EP
IRF200P222
MOSFET N-CH 200V 182A TO247AC
Infineon Technologies
581
In Stock
1 : ¥77.99000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
182A (Tc)
10V
6.6mOhm @ 82A, 10V
4V @ 270µA
203 nC @ 10 V
±20V
9820 pF @ 50 V
-
556W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
PG-TO247-3
IPW60R037P7XKSA1
MOSFET N-CH 650V 76A TO247-3
Infineon Technologies
642
In Stock
1 : ¥82.26000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
76A (Tc)
10V
37mOhm @ 29.5A, 10V
4V @ 1.48mA
121 nC @ 10 V
±20V
5243 pF @ 400 V
-
255W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
PG-TO247-3
IPW65R045C7FKSA1
MOSFET N-CH 650V 46A TO247-3
Infineon Technologies
2,403
In Stock
1 : ¥95.80000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
46A (Tc)
10V
45mOhm @ 24.9A, 10V
4V @ 1.25mA
93 nC @ 10 V
±20V
4340 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
AUIRFP4310Z BACK
IPW60R040C7XKSA1
MOSFET N-CH 600V 50A TO247-3
Infineon Technologies
677
In Stock
1 : ¥95.97000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
50A (Tc)
10V
40mOhm @ 24.9A, 10V
4V @ 1.24mA
107 nC @ 10 V
±20V
4340 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
PG-TO247-3
SPW47N60C3FKSA1
MOSFET N-CH 650V 47A TO247-3
Infineon Technologies
2,306
In Stock
1 : ¥125.60000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
47A (Tc)
10V
70mOhm @ 30A, 10V
3.9V @ 2.7mA
320 nC @ 10 V
±20V
6800 pF @ 25 V
-
415W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
PG-TO247-3
IPW60R045CPFKSA1
MOSFET N-CH 650V 60A TO247-3
Infineon Technologies
1,967
In Stock
1 : ¥146.45000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
60A (Tc)
10V
45mOhm @ 44A, 10V
3.5V @ 3mA
190 nC @ 10 V
±20V
6800 pF @ 100 V
-
431W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
CoolSiC Series
IMZ120R045M1XKSA1
SICFET N-CH 1200V 52A TO247-4
Infineon Technologies
184
In Stock
1 : ¥142.84000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1200 V
52A (Tc)
15V
59mOhm @ 20A, 15V
5.7V @ 10mA
52 nC @ 15 V
+20V, -10V
1900 pF @ 800 V
Current Sensing
228W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-1
TO-247-4
TO-247-3 AC EP
SIHG052N60EF-GE3
MOSFET N-CH 600V 48A TO247AC
Vishay Siliconix
244
In Stock
1 : ¥53.28000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
48A (Tc)
10V
52mOhm @ 23A, 10V
5V @ 250µA
101 nC @ 10 V
±30V
3380 pF @ 100 V
-
278W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
370
In Stock
1 : ¥83.49000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
50A (Tc)
10V
41mOhm @ 24.8A, 10V
4.5V @ 1.24mA
102 nC @ 10 V
±20V
4975 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
IMW65R039M1HXKSA1
IMW65R057M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Infineon Technologies
88
In Stock
1 : ¥89.97000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
35A (Tc)
18V
74mOhm @ 16.7A, 18V
5.7V @ 5mA
28 nC @ 18 V
+20V, -2V
930 pF @ 400 V
-
133W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-3 HiP
STWA57N65M5
MOSFET N-CH 650V 42A TO247
STMicroelectronics
90
In Stock
1 : ¥81.11000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
42A (Tc)
10V
63mOhm @ 21A, 10V
5V @ 250µA
98 nC @ 10 V
±25V
4200 pF @ 100 V
-
250W (Tc)
150°C (TJ)
Through Hole
TO-247
TO-247-3
TO-247N
SCT3060ALGC11
SICFET N-CH 650V 39A TO247N
Rohm Semiconductor
0
In Stock
Check Lead Time
1 : ¥111.98000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
78mOhm @ 13A, 18V
5.6V @ 6.67mA
58 nC @ 18 V
+22V, -4V
852 pF @ 500 V
-
165W (Tc)
175°C (TJ)
Through Hole
TO-247N
TO-247-3
AUIRFP4310Z BACK
IPW60R060C7XKSA1
MOSFET N-CH 600V 35A TO247-3
Infineon Technologies
3
In Stock
1 : ¥69.94000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
35A (Tc)
10V
60mOhm @ 15.9A, 10V
4V @ 800µA
68 nC @ 10 V
±20V
2850 pF @ 400 V
-
162W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
Showing
of 16

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.