Single FETs, MOSFETs

Results: 12
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDDiodes IncorporatedEPCInfineon Technologiesonsemi
Series
-eGaN®HEXFET®OptiMOS™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V20 V30 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)300mA (Ta)500mA (Ta)780mA (Ta)1.5A (Ta)1.6A (Ta)1.7A (Ta)2.7A (Ta)3A (Ta)4.3A (Ta)8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V2.7V, 4.5V4.5V, 10V5V10V
Rds On (Max) @ Id, Vgs
17.5mOhm @ 8.3A, 4.5V50mOhm @ 4.3A, 4.5V92mOhm @ 2.7A, 10V100mOhm @ 1.5A, 4.5V100mOhm @ 2.7A, 10V120mOhm @ 2.8A, 4.5V220mOhm @ 1.6A, 10V550mOhm @ 100mA, 5V600mOhm @ 610mA, 4.5V3Ohm @ 500mA, 10V5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
900mV @ 250µA950mV @ 250µA1.1V @ 10µA1.2V @ 250µA1.5V @ 250µA2.3V @ 25µA2.5V @ 250µA2.5V @ 25µA2.5V @ 80µA3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.12 nC @ 5 V0.6 nC @ 10 V1 nC @ 4.5 V1.8 nC @ 10 V2.5 nC @ 4.5 V3.6 nC @ 4.45 V5.5 nC @ 4.5 V11 nC @ 4.5 V15 nC @ 5 V
Vgs (Max)
+6V, -4V±8V±12V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
14 pF @ 50 V20 pF @ 25 V40 pF @ 10 V97 pF @ 15 V110 pF @ 15 V290 pF @ 25 V476 pF @ 10 V627 pF @ 10 V830 pF @ 10 V1010 pF @ 25 V
Power Dissipation (Max)
350mW (Ta)500mW (Ta)540mW (Ta)830mW (Ta)1.25W (Ta)1.3W (Ta)1.5W (Ta)2W (Ta)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
6-TSOPDieMicro3™/SOT-23PG-SOT23SOT-23SOT-23-3SOT-323TO-92-3
Package / Case
DieSC-70, SOT-323SOT-23-6TO-226-3, TO-92-3 (TO-226AA)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
12Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002H6327XTSA2
MOSFET N-CH 60V 300MA SOT23-3
Infineon Technologies
116,701
In Stock
1 : ¥2.38000
Cut Tape (CT)
3,000 : ¥0.39583
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
2.5V @ 250µA
0.6 nC @ 10 V
±20V
20 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMG2301L-7
MOSFET P-CH 20V 3A SOT23
Diodes Incorporated
168,457
In Stock
627,000
Factory
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45080
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3A (Ta)
2.5V, 4.5V
120mOhm @ 2.8A, 4.5V
1.2V @ 250µA
5.5 nC @ 4.5 V
±8V
476 pF @ 10 V
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-323
DMP2160UW-7
MOSFET P-CH 20V 1.5A SOT-323
Diodes Incorporated
40,796
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.70205
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
1.5A (Ta)
1.8V, 4.5V
100mOhm @ 1.5A, 4.5V
900mV @ 250µA
-
±12V
627 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
SOT-23-3
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
Infineon Technologies
50,124
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.88634
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
4.3A (Ta)
1.8V, 4.5V
50mOhm @ 4.3A, 4.5V
950mV @ 250µA
15 nC @ 5 V
±8V
830 pF @ 10 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML0100TRPBF
MOSFET N-CH 100V 1.6A SOT23
Infineon Technologies
34,830
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.16192
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
1.6A (Ta)
4.5V, 10V
220mOhm @ 1.6A, 10V
2.5V @ 25µA
2.5 nC @ 4.5 V
±16V
290 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
Infineon Technologies
206,168
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.94214
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
20 V
780mA (Ta)
2.7V, 4.5V
600mOhm @ 610mA, 4.5V
1.5V @ 250µA
3.6 nC @ 4.45 V
±12V
97 pF @ 15 V
-
540mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML0060TRPBF
MOSFET N-CH 60V 2.7A SOT23
Infineon Technologies
44,533
In Stock
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥1.13548
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2.7A (Ta)
4.5V, 10V
92mOhm @ 2.7A, 10V
2.5V @ 25µA
2.5 nC @ 4.5 V
±16V
290 pF @ 25 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
eGaN Series
EPC2037
GANFET N-CH 100V 1.7A DIE
EPC
31,854
In Stock
1 : ¥11.25000
Cut Tape (CT)
2,500 : ¥4.64062
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
1.7A (Ta)
5V
550mOhm @ 100mA, 5V
2.5V @ 80µA
0.12 nC @ 5 V
+6V, -4V
14 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
TO-92-3(StandardBody),TO-226_straightlead
BS170
MOSFET N-CH 60V 500MA TO92-3
onsemi
18,342
In Stock
1 : ¥3.37000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
500mA (Ta)
10V
5Ohm @ 200mA, 10V
3V @ 1mA
-
±20V
40 pF @ 10 V
-
830mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
SOT-23-6
IRLTS6342TRPBF
MOSFET N-CH 30V 8.3A 6TSOP
Infineon Technologies
9,690
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.20715
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
8.3A (Ta)
2.5V, 4.5V
17.5mOhm @ 8.3A, 4.5V
1.1V @ 10µA
11 nC @ 4.5 V
±12V
1010 pF @ 25 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6
SOT-23-3
IRLML2030TRPBF
MOSFET N-CH 30V 2.7A SOT23
Infineon Technologies
24,184
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.81040
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
2.7A (Ta)
4.5V, 10V
100mOhm @ 2.7A, 10V
2.3V @ 25µA
1 nC @ 4.5 V
±20V
110 pF @ 15 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
BSS123
BSS123
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
95,285
In Stock
1 : ¥1.07000
Cut Tape (CT)
3,000 : ¥0.18957
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
200mA (Ta)
4.5V, 10V
5Ohm @ 200mA, 10V
2.5V @ 250µA
1.8 nC @ 10 V
±20V
14 pF @ 50 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
Showing
of 12

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.