33A (Tc) Single FETs, MOSFETs

Results: 134
Manufacturer
Diodes IncorporatedGeneSiC SemiconductorGoford SemiconductorInfineon TechnologiesIXYSLittelfuse Inc.Microchip TechnologyMicrosemi CorporationNexperia USA Inc.NXP USA Inc.onsemiQorvoRenesas Electronics CorporationRohm Semiconductor
Series
-CoolMOS™ C7CoolMOS™ CFD7CoolMOS™ P7CoolSiC™CoolSIC™ M1EEFHEXFET®HiPerFET™HiPerFET™, PolarLoRing™
Packaging
BagBulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyLast Time BuyNot For New DesignsObsolete
Technology
MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
25 V30 V40 V55 V60 V75 V80 V100 V150 V200 V250 V500 V550 V600 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V5V, 10V8V, 10V10V10V, 12V10V, 15V12V15V18V20V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 20A, 10V7.5mOhm @ 10A, 10V10.5mOhm @ 11A, 10V12.6mOhm @ 10A, 10V13mOhm @ 16A, 10V14mOhm @ 16.5A, 10V17mOhm @ 10A, 10V18mOhm @ 12A, 10V19mOhm @ 15A, 10V20mOhm @ 19A, 10V21mOhm @ 10A, 10V25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1.95V @ 1mA2V @ 1mA2V @ 250µA2V @ 90µA2.1V @ 1mA2.4V @ 250µA2.5V @ 250µA2.8V @ 1mA2.8V @ 250µA3V @ 250µA3.5V @ 3mA3.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 5 V8.3 nC @ 10 V10 nC @ 10 V10.7 nC @ 10 V11.9 nC @ 10 V15 nC @ 10 V16.7 nC @ 5 V17.5 nC @ 10 V21.5 nC @ 10 V22 nC @ 10 V22 nC @ 18 V26 nC @ 10 V
Vgs (Max)
±10V±16V+20V, -16V+20V, -5V+20V, -7V±20V+22V, -10V+23V, -5V±25V±30V-
Input Capacitance (Ciss) (Max) @ Vds
528 pF @ 12 V593 pF @ 25 V617 pF @ 25 V683 pF @ 50 V744 pF @ 400 V750 pF @ 25 V782 pF @ 15 V824 pF @ 25 V860 pF @ 25 V1000 pF @ 15 V1060 pF @ 800 V1190 pF @ 75 V
FET Feature
-Temperature Sensing Diode
Power Dissipation (Max)
800mW (Ta), 142W (Tc)1W (Ta), 97W (Tc)1.56W (Ta), 211W (Tc)1.56W (Ta), 40W (Tc)2.23W (Ta), 40W (Tc)3.12W (Ta), 156W (Tc)3.3W (Ta), 14.7W (Tc)3.4W (Ta), 68W (Tc)3.5W (Ta), 7.8W (Tc)3.75W (Ta), 127W (Tc)3.8W (Ta), 170W (Tc)14.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)150°C150°C (TJ)175°C (TJ)-
Mounting Type
Chassis MountSurface MountSurface Mount, Wettable FlankThrough Hole
Supplier Device Package
8-DFN (4.9x5.75)8-DSOP Advance8-HSON8-SOICD2PAKDPAKH2PAK-7HiP247™I2PAKIPAK (TO-251AA)ISOTOP®LFPAK33
Package / Case
4-PowerTSFN8-PowerBSFN8-PowerSFN8-PowerTDFN8-PowerVDFN8-SMD, Flat Lead Exposed Pad8-SOIC (0.154", 3.90mm Width)10-PowerSOP ModulePowerPAK® SO-8SC-100, SOT-669SOT-1210, 8-LFPAK33 (5-Lead)SOT-227-4, miniBLOC
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRF540NPBF
MOSFET N-CH 100V 33A TO220AB
Infineon Technologies
139,288
In Stock
1 : ¥7.72000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
10V
44mOhm @ 16A, 10V
4V @ 250µA
71 nC @ 10 V
±20V
1960 pF @ 25 V
-
130W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF540NSTRLPBF
MOSFET N-CH 100V 33A D2PAK
Infineon Technologies
12,517
In Stock
1 : ¥12.31000
Cut Tape (CT)
800 : ¥6.64290
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
10V
44mOhm @ 16A, 10V
4V @ 250µA
71 nC @ 10 V
±20V
1960 pF @ 25 V
-
130W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO252-3
IRFR4615TRLPBF
MOSFET N-CH 150V 33A DPAK
Infineon Technologies
16,031
In Stock
1 : ¥13.22000
Cut Tape (CT)
3,000 : ¥5.94609
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
33A (Tc)
10V
42mOhm @ 21A, 10V
5V @ 100µA
26 nC @ 10 V
±20V
1750 pF @ 50 V
-
144W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPAK (TO-251)
IRFU4615PBF
MOSFET N-CH 150V 33A IPAK
Infineon Technologies
6,433
In Stock
1 : ¥15.11000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
33A (Tc)
10V
42mOhm @ 21A, 10V
5V @ 100µA
26 nC @ 10 V
±20V
1750 pF @ 50 V
-
144W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
IPAK (TO-251AA)
TO-251-3 Short Leads, IPAK, TO-251AA
PG-TDSON-8-1
BSC360N15NS3GATMA1
MOSFET N-CH 150V 33A 8TDSON
Infineon Technologies
20,873
In Stock
1 : ¥15.60000
Cut Tape (CT)
5,000 : ¥6.76370
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
33A (Tc)
8V, 10V
36mOhm @ 25A, 10V
4V @ 45µA
15 nC @ 10 V
±20V
1190 pF @ 75 V
-
74W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
8-DSOP Advance
TPW2900ENH,L1Q
PB-F POWER MOSFET TRANSISTOR DSO
Toshiba Semiconductor and Storage
4,998
In Stock
1 : ¥22.82000
Cut Tape (CT)
5,000 : ¥9.91679
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
33A (Tc)
10V
29mOhm @ 16.5A, 10V
4V @ 1mA
22 nC @ 10 V
±20V
2200 pF @ 100 V
-
800mW (Ta), 142W (Tc)
150°C
-
-
Surface Mount
8-DSOP Advance
8-PowerVDFN
TO-263AB
SIHB33N60E-GE3
MOSFET N-CH 600V 33A D2PAK
Vishay Siliconix
3,963
In Stock
1 : ¥48.76000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
33A (Tc)
10V
99mOhm @ 16.5A, 10V
4V @ 250µA
150 nC @ 10 V
±30V
3508 pF @ 100 V
-
278W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-247-3L
UF3C120080K3S
SICFET N-CH 1200V 33A TO247-3
Qorvo
17,624
In Stock
1 : ¥84.31000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1200 V
33A (Tc)
12V
100mOhm @ 20A, 12V
6V @ 10mA
51 nC @ 15 V
±25V
1500 pF @ 100 V
-
254.2W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3L
UJ3C120080K3S
SICFET N-CH 1200V 33A TO247-3
Qorvo
5,640
In Stock
1 : ¥84.47000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1200 V
33A (Tc)
12V
100mOhm @ 20A, 12V
6V @ 10mA
51 nC @ 15 V
±25V
1500 pF @ 100 V
-
254.2W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3 AC EP
AIMW120R080M1XKSA1
1200V COOLSIC MOSFET PG-TO247-3
Infineon Technologies
105
In Stock
1 : ¥119.12000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
33A (Tc)
15V
104mOhm @ 13A, 15V
5.7V @ 5.6mA
28 nC @ 15 V
+20V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
PG-TO247-3-41
TO-247-3
LFPAK56/POWER-SO8/SOT669
BUK7Y21-40EX
MOSFET N-CH 40V 33A LFPAK56
Nexperia USA Inc.
4,461
In Stock
1 : ¥4.93000
Cut Tape (CT)
1,500 : ¥2.10231
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
33A (Tc)
10V
21mOhm @ 10A, 10V
4V @ 1mA
10 nC @ 10 V
±20V
617 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
PowerDI5060 UX
DMTH10H032LPSWQ-13
MOSFET BVDSS: 61V~100V POWERDI50
Diodes Incorporated
2,472
In Stock
1 : ¥5.50000
Cut Tape (CT)
2,500 : ¥2.08777
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
4.5V, 10V
32mOhm @ 5A, 10V
2.5V @ 250µA
11.9 nC @ 10 V
±20V
683 pF @ 50 V
-
3.4W (Ta), 68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
LFPAK56/POWER-SO8/SOT669
BUK9Y21-40E,115
MOSFET N-CH 40V 33A LFPAK56
Nexperia USA Inc.
10,511
In Stock
1 : ¥5.58000
Cut Tape (CT)
1,500 : ¥2.37332
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
33A (Tc)
5V
17mOhm @ 10A, 10V
2.1V @ 1mA
7 nC @ 5 V
±10V
824 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS4615TRLPBF
MOSFET N-CH 150V 33A D2PAK
Infineon Technologies
1,823
In Stock
1 : ¥15.76000
Cut Tape (CT)
800 : ¥8.82966
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
33A (Tc)
10V
42mOhm @ 21A, 10V
5V @ 100µA
40 nC @ 10 V
±20V
1750 pF @ 50 V
-
144W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220F
FDPF33N25T
MOSFET N-CH 250V 33A TO220F
onsemi
2,067
In Stock
1 : ¥19.54000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
33A (Tc)
10V
94mOhm @ 16.5A, 10V
5V @ 250µA
48 nC @ 10 V
±30V
2135 pF @ 25 V
-
37W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220F-3
TO-220-3 Full Pack
PG-TO263-3
IPB65R065C7ATMA2
MOSFET N-CH 650V 33A TO263-3
Infineon Technologies
4,932
In Stock
1 : ¥46.55000
Cut Tape (CT)
1,000 : ¥34.40948
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
33A (Tc)
10V
65mOhm @ 17.1A, 10V
4.5V @ 200µA
64 nC @ 10 V
±20V
3020 pF @ 400 V
-
171W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
SIHB33N60EF-GE3
MOSFET N-CH 600V 33A D2PAK
Vishay Siliconix
712
In Stock
1 : ¥51.31000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
600 V
33A (Tc)
10V
98mOhm @ 16.5A, 10V
4V @ 250µA
155 nC @ 10 V
±30V
3454 pF @ 100 V
-
278W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D²PAK
STB42N65M5
MOSFET N-CH 650V 33A D2PAK
STMicroelectronics
3,292
In Stock
1 : ¥96.30000
Cut Tape (CT)
1,000 : ¥54.60390
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
33A (Tc)
10V
79mOhm @ 16.5A, 10V
5V @ 250µA
100 nC @ 10 V
±25V
4650 pF @ 100 V
-
190W (Tc)
150°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-247-3 HiP
SCTW40N120G2VAG
SICFET N-CH 1200V 33A HIP247
STMicroelectronics
603
In Stock
1 : ¥174.28000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
33A (Tc)
18V
105mOhm @ 20A, 18V
5V @ 1mA
63 nC @ 18 V
+22V, -10V
1230 pF @ 800 V
-
290W (Tc)
-55°C ~ 200°C (TJ)
Automotive
AEC-Q101
Through Hole
HiP247™
TO-247-3
PowerPAK SO-8
SIRA18DP-T1-GE3
MOSFET N-CH 30V 33A PPAK SO-8
Vishay Siliconix
2,608
In Stock
1 : ¥5.01000
Cut Tape (CT)
3,000 : ¥1.89045
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
33A (Tc)
4.5V, 10V
7.5mOhm @ 10A, 10V
2.4V @ 250µA
21.5 nC @ 10 V
+20V, -16V
1000 pF @ 15 V
-
3.3W (Ta), 14.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
2,500
In Stock
2,500 : ¥5.71229
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
60 V
33A (Tc)
5V, 10V
14mOhm @ 16.5A, 10V
2.5V @ 250µA
78 nC @ 10 V
±20V
3900 pF @ 25 V
-
1W (Ta), 97W (Tc)
175°C (TJ)
-
-
Surface Mount
8-HSON
8-SMD, Flat Lead Exposed Pad
TO-220-3
FDP33N25
MOSFET N-CH 250V 33A TO220-3
onsemi
763
In Stock
1 : ¥16.42000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
33A (Tc)
10V
94mOhm @ 16.5A, 10V
5V @ 250µA
48 nC @ 10 V
±30V
2135 pF @ 25 V
-
235W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
8-SOIC
SI4456DY-T1-E3
MOSFET N-CH 40V 33A 8SO
Vishay Siliconix
2,500
In Stock
1 : ¥22.00000
Cut Tape (CT)
2,500 : ¥9.92484
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
33A (Tc)
4.5V, 10V
3.8mOhm @ 20A, 10V
2.8V @ 250µA
122 nC @ 10 V
±20V
5670 pF @ 20 V
-
3.5W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
R6004KNXC7G
RCX330N25
MOSFET N-CH 250V 33A TO220FM
Rohm Semiconductor
353
In Stock
1 : ¥28.08000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
250 V
33A (Tc)
10V
-
-
-
±30V
-
-
2.23W (Ta), 40W (Tc)
150°C (TJ)
-
-
Through Hole
TO-220FM
TO-220-3 Full Pack
TO-247-3
NTHL099N60S5
NTHL099N60S5
onsemi
302
In Stock
900
Factory
1 : ¥35.30000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
33A (Tc)
10V
99mOhm @ 13.5A, 10V
4V @ 2.8mA
48 nC @ 10 V
±30V
2500 pF @ 400 V
-
184W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
Showing
of 134

33A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.