Single FETs, MOSFETs

Results: 4
Product Status
ActiveNot For New Designs
Current - Continuous Drain (Id) @ 25°C
15A (Tc)28A (Tj)33A (Tc)57A (Tc)
Rds On (Max) @ Id, Vgs
41mOhm @ 28.5A, 10V99mOhm @ 13.5A, 10V120mOhm @ 11.5A, 10V185mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
4V @ 2.2mA4V @ 2.8mA4.3V @ 1.4mA4.3V @ 6.7mA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V40 nC @ 10 V48 nC @ 10 V108 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 400 V2088 pF @ 400 V2500 pF @ 400 V5840 pF @ 400 V
Power Dissipation (Max)
116W (Tc)160W (Tc)184W (Tc)329W (Tc)
Supplier Device Package
TO-220-3TO-247-3
Package / Case
TO-220-3TO-247-3
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-3
NTHL041N60S5H
NTHL041N60S5H
onsemi
428
In Stock
10,350
Factory
1 : ¥84.48000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
57A (Tc)
10V
41mOhm @ 28.5A, 10V
4.3V @ 6.7mA
108 nC @ 10 V
±30V
5840 pF @ 400 V
-
329W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247-3
NTHL099N60S5
NTHL099N60S5
onsemi
302
In Stock
900
Factory
1 : ¥35.30000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
33A (Tc)
10V
99mOhm @ 13.5A, 10V
4V @ 2.8mA
48 nC @ 10 V
±30V
2500 pF @ 400 V
-
184W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-220-3
NTP185N60S5H
MOSFET N-CH 600V 15A TO220-3
onsemi
770
In Stock
4,800
Factory
1 : ¥26.68000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
15A (Tc)
10V
185mOhm @ 7.5A, 10V
4.3V @ 1.4mA
25 nC @ 10 V
±30V
1350 pF @ 400 V
-
116W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-247-3
NTHL120N60S5Z
MOSFET N-CH 600V 22A TO3PN
onsemi
0
In Stock
450 : ¥31.48689
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
28A (Tj)
10V
120mOhm @ 11.5A, 10V
4V @ 2.2mA
40 nC @ 10 V
±20V
2088 pF @ 400 V
-
160W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.