SIHB33N60E-GE3

DigiKey Part Number
SIHB33N60E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHB33N60E-GE3
Description
MOSFET N-CH 600V 33A D2PAK
Manufacturer Standard Lead Time
28 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 33A (Tc) 278W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3508 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
278W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
Base Product Number
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥48.76000¥48.76
10¥40.95600¥409.56
100¥33.13290¥3,313.29
500¥29.45120¥14,725.60
1,000¥25.21756¥25,217.56
2,000¥23.74505¥47,490.10
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.