SCTWA60N120G2-4 is out of stock and can be placed on backorder.
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Microchip Technology
In Stock: 87
Unit Price: ¥204.82000
Datasheet

SCTWA60N120G2-4

DigiKey Part Number
497-SCTWA60N120G2-4-ND
Manufacturer
Manufacturer Product Number
SCTWA60N120G2-4
Description
SILICON CARBIDE POWER MOSFET 120
Manufacturer Standard Lead Time
32 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 60A (Tc) 388W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
EDA/CAD Models
SCTWA60N120G2-4 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
52mOhm @ 30A, 18V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
94 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1969 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
388W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥259.42000¥259.42
10¥239.23700¥2,392.37
30¥228.48800¥6,854.64
120¥204.29442¥24,515.33
270¥194.88626¥52,619.29
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.