G2R1000MT33J

DigiKey Part Number
1242-G2R1000MT33J-ND
Manufacturer
Manufacturer Product Number
G2R1000MT33J
Description
SIC MOSFET N-CH 4A TO263-7
Manufacturer Standard Lead Time
26 Weeks
Customer Reference
Detailed Description
N-Channel 3300 V 4A (Tc) 74W (Tc) Surface Mount TO-263-7
Datasheet
 Datasheet
EDA/CAD Models
G2R1000MT33J Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
3300 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
3.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
238 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
74W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
Base Product Number
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥153.43000¥153.43
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.