RF FETs, MOSFETs

Results: 14
Manufacturer
Ampleon USA Inc.NXP USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tray
Configuration
DualDual, Common Source
Frequency
108MHz225MHz230MHz400MHz ~ 860MHz500MHz600MHz ~ 700MHz860MHz1.3GHz
Gain
17dB19dB20dB21dB23.5dB23.9dB24dB24.4dB26.2dB26.5dB28dB28.5dB
Voltage - Test
32 V50 V
Current Rating (Amps)
2.8µA56A88A-
Current - Test
40 mA100 mA150 mA200 mA600 mA650 mA1 A1.3 A
Power - Output
35W150W350W400W600W700W750W900W1200W1250W1400W1700W
Voltage - Rated
65 V104 V108 V110 V133 V135 V
Package / Case
NI-1230SOT-1121ASOT-1214ASOT-467CSOT-539A
Supplier Device Package
LDMOSTNI-1230SOT1214ASOT467CSOT539A
Stocking Options
Environmental Options
Media
Marketplace Product
14Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
Frequency
Gain
Voltage - Test
Current Rating (Amps)
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Mounting Type
Package / Case
Supplier Device Package
LDMOST SOT1121A
BLF183XRU
RF MOSFET LDMOS 50V LDMOST
Ampleon USA Inc.
102
In Stock
1 : ¥1,241.34000
Tray
-
Tray
Active
LDMOS
Dual, Common Source
108MHz
28dB
50 V
-
-
100 mA
350W
135 V
Chassis Mount
SOT-1121A
LDMOST
SOT1214A
BLF184XRU
RF MOSFET LDMOS 50V SOT1214A
Ampleon USA Inc.
165
In Stock
1 : ¥1,482.94000
Tray
-
Tray
Active
LDMOS
Dual, Common Source
108MHz
23.9dB
50 V
-
-
100 mA
700W
135 V
Chassis Mount
SOT-1214A
SOT1214A
SOT539A
BLF989U
RF MOSFET LDMOS 50V SOT539A
Ampleon USA Inc.
52
In Stock
1 : ¥1,588.92000
Tray
-
Tray
Active
LDMOS
Dual, Common Source
400MHz ~ 860MHz
20dB
50 V
2.8µA
-
1.3 A
900W
108 V
Chassis Mount
SOT-539A
SOT539A
MRF6VP11KHR5
MRFE6VP61K25HR6
RF MOSFET LDMOS 50V NI1230
NXP USA Inc.
111
In Stock
1 : ¥1,772.23000
Cut Tape (CT)
150 : ¥1,609.95153
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
LDMOS
Dual
230MHz
24dB
50 V
-
-
100 mA
1250W
133 V
Chassis Mount
NI-1230
NI-1230
SOT539A
BLF188XRU
RF MOSFET LDMOS 50V SOT539A
Ampleon USA Inc.
520
In Stock
1 : ¥1,774.45000
Tray
-
Tray
Active
LDMOS
Dual, Common Source
108MHz
24.4dB
50 V
-
-
40 mA
1400W
135 V
Chassis Mount
SOT-539A
SOT539A
SOT539A
BLF189XRAU
RF MOSFET LDMOS 50V SOT539A
Ampleon USA Inc.
400
In Stock
1 : ¥1,909.82000
Tray
-
Tray
Active
LDMOS
Dual, Common Source
500MHz
26.2dB
50 V
2.8µA
-
150 mA
1700W
135 V
Chassis Mount
SOT-539A
SOT539A
SOT539A
BLF178P,112
RF MOSFET LDMOS 50V SOT539A
Ampleon USA Inc.
57
In Stock
1 : ¥2,432.02000
Tray
-
Tray
Active
LDMOS
Dual, Common Source
108MHz
28.5dB
50 V
88A
-
40 mA
1200W
110 V
Chassis Mount
SOT-539A
SOT539A
LDMOST SOT1121A
BLF884P,112
RF MOSFET LDMOS 50V LDMOST
Ampleon USA Inc.
97
In Stock
1 : ¥1,067.13000
Tray
-
Tray
Active
LDMOS
Dual, Common Source
860MHz
21dB
50 V
-
-
650 mA
150W
104 V
Chassis Mount
SOT-1121A
LDMOST
SOT1214A
BLF174XR,112
RF MOSFET LDMOS 50V SOT1214A
Ampleon USA Inc.
46
In Stock
1 : ¥1,210.06000
Tray
-
Tray
Active
LDMOS
Dual, Common Source
108MHz
28.5dB
50 V
-
-
100 mA
600W
110 V
Chassis Mount
SOT-1214A
SOT1214A
SOT467C
BLF642,112
RF MOSFET LDMOS 32V SOT467C
Ampleon USA Inc.
306
In Stock
1 : ¥1,391.07000
Tray
-
Tray
Active
LDMOS
-
1.3GHz
19dB
32 V
-
-
200 mA
35W
65 V
Chassis Mount
SOT-467C
SOT467C
SOT539A
BLF888EU
RF MOSFET LDMOS 50V SOT539A
Ampleon USA Inc.
45
In Stock
1 : ¥2,339.66000
Tray
-
Tray
Active
LDMOS
Dual, Common Source
600MHz ~ 700MHz
17dB
50 V
-
-
600 mA
750W
104 V
Chassis Mount
SOT-539A
SOT539A
SOT539A
BLF578XR,112
RF MOSFET LDMOS 50V SOT539A
Ampleon USA Inc.
0
In Stock
Check Lead Time
1 : ¥2,935.99000
Tray
-
Tray
Active
LDMOS
Dual, Common Source
225MHz
23.5dB
50 V
-
-
40 mA
1400W
110 V
Chassis Mount
SOT-539A
SOT539A
SOT539A
BLF178XR,112
RF MOSFET LDMOS 50V SOT539A
Ampleon USA Inc.
9
In Stock
1 : ¥2,089.77000
Tray
-
Tray
Active
LDMOS
Dual, Common Source
108MHz
28dB
50 V
-
-
40 mA
1400W
110 V
Chassis Mount
SOT-539A
SOT539A
SOT539A
BLF574,112
RF MOSFET LDMOS 50V SOT539A
Ampleon USA Inc.
13
In Stock
1 : ¥2,775.09000
Tray
-
Tray
Active
LDMOS
Dual, Common Source
225MHz
26.5dB
50 V
56A
-
1 A
400W
110 V
Chassis Mount
SOT-539A
SOT539A
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of 14

RF FETs, MOSFETs


RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.