24A (Ta), 100A (Tc) Single FETs, MOSFETs

Results: 19
Manufacturer
Diodes IncorporatedInfineon TechnologiesTexas Instruments
Series
-HEXFET®NexFET™OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveObsolete
Drain to Source Voltage (Vdss)
25 V30 V40 V60 V
Drive Voltage (Max Rds On, Min Rds On)
3V, 8V4.5V, 10V5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
2.6mOhm @ 30A, 10V2.7mOhm @ 25A, 10V2.7mOhm @ 50A, 10V2.8mOhm @ 50A, 10V2.9mOhm @ 100A, 10V2.9mOhm @ 50A, 10V3mOhm @ 20A, 10V3.5mOhm @ 20A, 10V3.5mOhm @ 50A, 10V3.7mOhm @ 22A, 8V3.9mOhm @ 24A, 10V
Vgs(th) (Max) @ Id
1.6V @ 250µA1.8V @ 250µA1.9V @ 250µA2V @ 250µA2V @ 49µA2V @ 80µA2.2V @ 250µA2.5V @ 250µA2.8V @ 75µA3.3V @ 50µA4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
11.7 nC @ 4.5 V13 nC @ 4.5 V15.3 nC @ 4.5 V26 nC @ 10 V28 nC @ 4.5 V40.1 nC @ 10 V41 nC @ 5 V49 nC @ 10 V56 nC @ 10 V80 nC @ 10 V85 nC @ 10 V
Vgs (Max)
+10V, -8V+16V, -12V±20V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 15 V1780 pF @ 12.5 V1980 pF @ 15 V2170 pF @ 15 V2798 pF @ 20 V3120 pF @ 25 V3375 pF @ 30 V4100 pF @ 30 V4650 pF @ 15 V5090 pF @ 15 V6800 pF @ 20 V
Power Dissipation (Max)
2.5W (Ta), 48W (Tc)2.5W (Ta), 83W (Tc)2.62W (Ta), 65.2W (Tc)2.8W (Ta), 78W (Tc)3W (Ta)3W (Ta), 100W (Tc)3W (Ta), 136W (Tc)3.1W (Ta)3.2W (Ta)3.6W (Ta), 114W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-VSONP (5x6)PG-TDSON-8-1PG-TDSON-8-6PG-TDSON-8-7PG-TO220-3PG-TO262-3POWERDI3333-8PQFN (5x6)
Package / Case
8-PowerTDFN8-PowerVDFN8-VQFN Exposed PadTO-220-3TO-262-3 Long Leads, I2PAK, TO-262AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC0902NSATMA1
MOSFET N-CH 30V 24A/100A TDSON
Infineon Technologies
11,208
In Stock
1 : ¥9.52000
Cut Tape (CT)
5,000 : ¥3.76290
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
24A (Ta), 100A (Tc)
4.5V, 10V
2.6mOhm @ 30A, 10V
2.2V @ 250µA
26 nC @ 10 V
±20V
1700 pF @ 15 V
-
2.5W (Ta), 48W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
PowerDI3333-8
DMTH43M8LFGQ-13
MOSFET N-CH 40V PWRDI3333
Diodes Incorporated
1,843
In Stock
2,619,000
Factory
1 : ¥9.52000
Cut Tape (CT)
3,000 : ¥3.93069
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
24A (Ta), 100A (Tc)
5V, 10V
3mOhm @ 20A, 10V
2.5V @ 250µA
40.1 nC @ 10 V
±20V
2798 pF @ 20 V
-
2.62W (Ta), 65.2W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
POWERDI3333-8
8-PowerVDFN
PG-TDSON-8-1
BSC027N04LSGATMA1
MOSFET N-CH 40V 24A/100A TDSON
Infineon Technologies
56,435
In Stock
1 : ¥12.48000
Cut Tape (CT)
5,000 : ¥4.90870
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
24A (Ta), 100A (Tc)
4.5V, 10V
2.7mOhm @ 50A, 10V
2V @ 49µA
85 nC @ 10 V
±20V
6800 pF @ 20 V
-
2.5W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
8-Power TDFN
BSC028N06NSTATMA1
MOSFET N-CH 60V 24A/100A TDSON
Infineon Technologies
20,835
In Stock
1 : ¥21.26000
Cut Tape (CT)
5,000 : ¥9.22274
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
24A (Ta), 100A (Tc)
6V, 10V
2.8mOhm @ 50A, 10V
3.3V @ 50µA
49 nC @ 10 V
±20V
3375 pF @ 30 V
-
3W (Ta), 100W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
IRFH8307
ISC026N03L5SATMA1
MOSFET N-CH 30V 24A/100A TDSON
Infineon Technologies
21,428
In Stock
1 : ¥7.63000
Cut Tape (CT)
5,000 : ¥2.76254
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
24A (Ta), 100A (Tc)
4.5V, 10V
2.6mOhm @ 30A, 10V
2V @ 250µA
26 nC @ 10 V
±20V
1700 pF @ 15 V
-
2.5W (Ta), 48W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
PowerDI3333-8
DMTH43M8LFGQ-7
MOSFET N-CH 40V PWRDI3333
Diodes Incorporated
1,781
In Stock
312,000
Factory
1 : ¥9.52000
Cut Tape (CT)
2,000 : ¥3.93068
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
24A (Ta), 100A (Tc)
5V, 10V
3mOhm @ 20A, 10V
2.5V @ 250µA
40.1 nC @ 10 V
±20V
2798 pF @ 20 V
-
2.62W (Ta), 65.2W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
POWERDI3333-8
8-PowerVDFN
PowerDI3333-8
DMTH43M8LFG-7
MOSFET N-CH 40V PWRDI3333
Diodes Incorporated
5,950
In Stock
244,000
Factory
1 : ¥7.88000
Cut Tape (CT)
2,000 : ¥3.26178
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
24A (Ta), 100A (Tc)
5V, 10V
3mOhm @ 20A, 10V
2.5V @ 250µA
40.1 nC @ 10 V
±20V
2798 pF @ 20 V
-
2.62W (Ta), 65.2W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
POWERDI3333-8
8-PowerVDFN
8-Power TDFN
CSD17306Q5A
MOSFET N-CH 30V 24A/100A 8VSON
Texas Instruments
4,486
In Stock
1 : ¥10.59000
Cut Tape (CT)
2,500 : ¥4.36721
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
24A (Ta), 100A (Tc)
3V, 8V
3.7mOhm @ 22A, 8V
1.6V @ 250µA
15.3 nC @ 4.5 V
+10V, -8V
2170 pF @ 15 V
-
3.2W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
8-Power TDFN
CSD16413Q5A
MOSFET N-CH 25V 24A/100A 8VSON
Texas Instruments
1,314
In Stock
1 : ¥11.08000
Cut Tape (CT)
2,500 : ¥4.58370
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
24A (Ta), 100A (Tc)
4.5V, 10V
3.9mOhm @ 24A, 10V
1.9V @ 250µA
11.7 nC @ 4.5 V
+16V, -12V
1780 pF @ 12.5 V
-
3.1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
8-Power TDFN
CSD17505Q5A
MOSFET N-CH 30V 24A/100A 8VSON
Texas Instruments
1,863
In Stock
1 : ¥13.71000
Cut Tape (CT)
2,500 : ¥5.89976
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
24A (Ta), 100A (Tc)
4.5V, 10V
3.5mOhm @ 20A, 10V
1.8V @ 250µA
13 nC @ 4.5 V
±20V
1980 pF @ 15 V
-
3.2W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
IRFHM830DTR2PBF
IRFH5104TR2PBF
MOSFET N-CH 40V 24A/100A PQFN
Infineon Technologies
339
In Stock
1 : ¥10.84000
Cut Tape (CT)
400 : ¥11.61048
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
24A (Ta), 100A (Tc)
10V
3.5mOhm @ 50A, 10V
4V @ 100µA
80 nC @ 10 V
±20V
3120 pF @ 25 V
-
3.6W (Ta), 114W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PQFN (5x6)
8-VQFN Exposed Pad
8-Power TDFN
CSD17555Q5A
MOSFET N-CH 30V 24A/100A 8VSON
Texas Instruments
0
In Stock
Check Lead Time
1 : ¥12.64000
Cut Tape (CT)
2,500 : ¥5.69026
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
24A (Ta), 100A (Tc)
4.5V, 10V
2.7mOhm @ 25A, 10V
1.9V @ 250µA
28 nC @ 4.5 V
±20V
4650 pF @ 15 V
-
3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
AUIRFSL6535 back
IPI029N06NAKSA1
MOSFET N-CH 60V 24A/100A TO262-3
Infineon Technologies
45
In Stock
1 : ¥18.39000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
24A (Ta), 100A (Tc)
6V, 10V
2.9mOhm @ 100A, 10V
2.8V @ 75µA
56 nC @ 10 V
±20V
4100 pF @ 30 V
-
3W (Ta), 136W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-220-3
IPP029N06NAKSA1
MOSFET N-CH 60V 24A/100A TO220-3
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥22.25000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
24A (Ta), 100A (Tc)
6V, 10V
2.9mOhm @ 100A, 10V
2.8V @ 75µA
56 nC @ 10 V
±20V
4100 pF @ 30 V
-
3W (Ta), 136W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO220-3
TO-220-3
PowerDI3333-8
DMTH43M8LFG-13
MOSFET N-CH 40V PWRDI3333
Diodes Incorporated
0
In Stock
6,000
Factory
Check Lead Time
3,000 : ¥3.26179
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
40 V
24A (Ta), 100A (Tc)
5V, 10V
3mOhm @ 20A, 10V
2.5V @ 250µA
40.1 nC @ 10 V
±20V
2798 pF @ 20 V
-
2.62W (Ta), 65.2W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
POWERDI3333-8
8-PowerVDFN
PowerDI3333-8
DMTH43M8LFGQ-7-01
MOSFET BVDSS: 31V~40V POWERDI333
Diodes Incorporated
0
In Stock
Check Lead Time
2,000 : ¥3.82933
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
40 V
24A (Ta), 100A (Tc)
5V, 10V
3mOhm @ 20A, 10V
2.5V @ 250µA
40.1 nC @ 10 V
±20V
2798 pF @ 20 V
-
2.62W (Ta), 65.2W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
POWERDI3333-8
8-PowerVDFN
PowerDI3333-8
DMTH43M8LFGQ-13-01
MOSFET BVDSS: 31V~40V POWERDI333
Diodes Incorporated
0
In Stock
Check Lead Time
3,000 : ¥3.82933
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
40 V
24A (Ta), 100A (Tc)
5V, 10V
3mOhm @ 20A, 10V
2.5V @ 250µA
40.1 nC @ 10 V
±20V
2798 pF @ 20 V
-
2.62W (Ta), 65.2W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
POWERDI3333-8
8-PowerVDFN
PG-TDSON-8-1
BSC029N025S G
MOSFET N-CH 25V 24A/100A TDSON
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
25 V
24A (Ta), 100A (Tc)
4.5V, 10V
2.9mOhm @ 50A, 10V
2V @ 80µA
41 nC @ 5 V
±20V
5090 pF @ 15 V
-
2.8W (Ta), 78W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
IRFHM830DTR2PBF
IRFH5104TRPBF
MOSFET N-CH 40V 24A/100A PQFN
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
24A (Ta), 100A (Tc)
10V
3.5mOhm @ 50A, 10V
4V @ 100µA
80 nC @ 10 V
±20V
3120 pF @ 25 V
-
3.6W (Ta), 114W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PQFN (5x6)
8-VQFN Exposed Pad
Showing
of 19

24A (Ta), 100A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.