Single FETs, MOSFETs

Results: 16
Manufacturer
Diodes IncorporatedEPCGood-Ark SemiconductorInfineon TechnologiesNexperia USA Inc.onsemiRohm SemiconductorToshiba Semiconductor and StorageVishay Siliconix
Series
-OptiMOS™OptiMOS™ 7OptiMOS™-5ThunderFET®TrenchFET®U-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
30 V40 V60 V100 V150 V200 V250 V300 V1700 V
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)3.5A (Ta)3.7A (Tc)5.4A (Ta), 19.5A (Tc)14A (Ta)26A (Tc)33A (Tc)35.4A (Tc)36A (Tc)38A (Tc)41A (Ta), 230A (Tc)64A (Tc)100A (Tc)106A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 10V4.5V, 10V5V7V, 10V7.5V, 10V8V, 10V10V18V
Rds On (Max) @ Id, Vgs
0.44mOhm @ 88A, 10V1.15mOhm @ 30A, 10V4mOhm @ 50A, 10V6mOhm @ 68A, 10V9mOhm @ 32A, 10V10.7mOhm @ 88A, 10V15.4mOhm @ 19A, 10V22mOhm @ 14A, 5V29mOhm @ 16.5A, 10V31.9mOhm @ 10A, 10V32mOhm @ 36A, 10V49mOhm @ 3.5A, 10V52mOhm @ 13A, 10V75mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
2V @ 90µA2.2V @ 250µA2.5V @ 2mA2.7V @ 250µA3V @ 130µA3V @ 250µA4V @ 1mA4V @ 250µA4V @ 900µA4V @ 90µA4.3V @ 1mA4.6V @ 180µA
Gate Charge (Qg) (Max) @ Vgs
5.9 nC @ 5 V7.6 nC @ 10 V13 nC @ 10 V14 nC @ 18 V21 nC @ 10 V22 nC @ 10 V29 nC @ 10 V38 nC @ 10 V44 nC @ 10 V64 nC @ 10 V68 nC @ 10 V78 nC @ 10 V82 nC @ 10 V169 nC @ 10 V
Vgs (Max)
+6V, -4V±20V+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
184 pF @ 800 V187.3 pF @ 25 V350 pF @ 100 V450 pF @ 30 V600 pF @ 100 V1380 pF @ 100 V2200 pF @ 100 V2200 pF @ 75 V2350 pF @ 100 V4720 pF @ 100 V5200 pF @ 50 V5300 pF @ 75 V5400 pF @ 75 V5780 pF @ 15 V
Power Dissipation (Max)
310mW (Ta)710mW (Ta), 8.3W (Tc)800mW (Ta), 142W (Tc)960mW (Ta), 210W (Tc)1.6W (Ta), 78W (Tc)3.13W (Ta), 96W (Tc)5.1W (Ta), 65.8W (Tc)35W (Tc)78W (Tc)104W (Tc)125W (Tc)167W (Tc)219W (Tc)250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)150°C150°C (TJ)175°C175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
5-DFN (5x6) (8-SOFL)8-DSOP Advance8-SOP Advance (5x5)DiePG-TDSON-8-1PG-TDSON-8-34PG-TDSON-8-53PG-TO263-7-3PowerPAK® 1212-8SPowerPAK® SO-8SOT-23-3TO-236ABTO-247TO-3PFM
Package / Case
8-PowerTDFN8-PowerTDFN, 5 Leads8-PowerVDFNDiePowerPAK® 1212-8SPowerPAK® SO-8TO-236-3, SC-59, SOT-23-3TO-247-3TO-263-7, D2PAK (6 Leads + Tab)TO-3PFM, SC-93-3
Stocking Options
Environmental Options
Media
Marketplace Product
16Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
12,413
In Stock
1 : ¥15.11000
Cut Tape (CT)
5,000 : ¥6.57001
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
38A (Tc)
10V
15.4mOhm @ 19A, 10V
4V @ 1mA
22 nC @ 10 V
±20V
2200 pF @ 75 V
-
1.6W (Ta), 78W (Tc)
150°C
-
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
EPC22xx
EPC2207
TRANS GAN 200V DIE .022OHM
EPC
28,950
In Stock
1 : ¥19.54000
Cut Tape (CT)
2,500 : ¥8.82209
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
14A (Ta)
5V
22mOhm @ 14A, 5V
2.5V @ 2mA
5.9 nC @ 5 V
+6V, -4V
600 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
14,394
In Stock
1 : ¥22.41000
Cut Tape (CT)
5,000 : ¥9.72113
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
26A (Tc)
10V
52mOhm @ 13A, 10V
4V @ 1mA
22 nC @ 10 V
±20V
2200 pF @ 100 V
-
78W (Tc)
150°C (TJ)
-
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
8-DSOP Advance
TPW2900ENH,L1Q
PB-F POWER MOSFET TRANSISTOR DSO
Toshiba Semiconductor and Storage
4,998
In Stock
1 : ¥22.82000
Cut Tape (CT)
5,000 : ¥9.91679
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
33A (Tc)
10V
29mOhm @ 16.5A, 10V
4V @ 1mA
22 nC @ 10 V
±20V
2200 pF @ 100 V
-
800mW (Ta), 142W (Tc)
150°C
-
-
Surface Mount
8-DSOP Advance
8-PowerVDFN
PG-TDSON-8-1
BSC320N20NS3GATMA1
MOSFET N-CH 200V 36A TDSON-8
Infineon Technologies
20,527
In Stock
1 : ¥26.52000
Cut Tape (CT)
5,000 : ¥12.37047
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
36A (Tc)
10V
32mOhm @ 36A, 10V
4V @ 90µA
29 nC @ 10 V
±20V
2350 pF @ 100 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
7,686
In Stock
1 : ¥27.17000
Cut Tape (CT)
5,000 : ¥12.68344
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
175A
7V, 10V
0.44mOhm @ 88A, 10V
3V @ 130µA
169 nC @ 10 V
±20V
11310 pF @ 20 V
-
219W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TDSON-8-53
8-PowerTDFN
TO-3PFM
SCT2H12NZGC11
SICFET N-CH 1700V 3.7A TO3PFM
Rohm Semiconductor
2,213
In Stock
1 : ¥59.19000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
3.7A (Tc)
18V
1.5Ohm @ 1.1A, 18V
4V @ 900µA
14 nC @ 18 V
+22V, -6V
184 pF @ 800 V
-
35W (Tc)
175°C (TJ)
-
-
Through Hole
TO-3PFM
TO-3PFM, SC-93-3
TO-236AB
PMV37ENER
PMV37ENE/SOT23/TO-236AB
Nexperia USA Inc.
5,029
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.87977
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
3.5A (Ta)
4.5V, 10V
49mOhm @ 3.5A, 10V
2.7V @ 250µA
13 nC @ 10 V
±20V
450 pF @ 30 V
-
710mW (Ta), 8.3W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMN30H4D0L-7
MOSFET N-CH 300V 250MA SOT23
Diodes Incorporated
18,164
In Stock
78,000
Factory
1 : ¥4.52000
Cut Tape (CT)
3,000 : ¥1.50918
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
300 V
250mA (Ta)
2.7V, 10V
4Ohm @ 300mA, 10V
3V @ 250µA
7.6 nC @ 10 V
±20V
187.3 pF @ 25 V
-
310mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
5-DFN, 8-SO Flat Lead
NTMFS4C302NT1G
MOSFET N-CH 30V 41A/230A 5DFN
onsemi
4,504
In Stock
1 : ¥13.38000
Cut Tape (CT)
1,500 : ¥6.36121
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
41A (Ta), 230A (Tc)
4.5V, 10V
1.15mOhm @ 30A, 10V
2.2V @ 250µA
82 nC @ 10 V
±20V
5780 pF @ 15 V
-
3.13W (Ta), 96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
PowerPAK SO-8
SIR610DP-T1-RE3
MOSFET N-CH 200V 35.4A PPAK SO-8
Vishay Siliconix
2,504
In Stock
1 : ¥14.86000
Cut Tape (CT)
3,000 : ¥6.69927
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
35.4A (Tc)
7.5V, 10V
31.9mOhm @ 10A, 10V
4V @ 250µA
38 nC @ 10 V
±20V
1380 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
8,138
In Stock
1 : ¥15.27000
Cut Tape (CT)
5,000 : ¥6.64208
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
64A (Tc)
8V, 10V
9mOhm @ 32A, 10V
4.3V @ 1mA
44 nC @ 10 V
±20V
5400 pF @ 75 V
-
960mW (Ta), 210W (Tc)
175°C
-
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
PG-TDSON-8-34
IAUC100N10S5L040ATMA1
MOSFET N-CH 100V 100A 8TDSON-34
Infineon Technologies
4,379
In Stock
1 : ¥21.51000
Cut Tape (CT)
5,000 : ¥9.33311
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
100A (Tc)
4.5V, 10V
4mOhm @ 50A, 10V
2V @ 90µA
78 nC @ 10 V
±20V
5200 pF @ 50 V
-
167W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8-34
8-PowerTDFN
D2PAK-7pin
IPB060N15N5ATMA1
MOSFET N-CH 150V 136A TO263-7
Infineon Technologies
564
In Stock
1 : ¥56.32000
Cut Tape (CT)
1,000 : ¥31.95727
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
136A (Tc)
8V, 10V
6mOhm @ 68A, 10V
4.6V @ 180µA
68 nC @ 10 V
±20V
5300 pF @ 75 V
-
250W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-3
TO-263-7, D2PAK (6 Leads + Tab)
GSFA20106
GSFA20106
MOSFET, N-CH, SINGLE, 106.00A, 2
Good-Ark Semiconductor
128
In Stock
1 : ¥36.94000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
106A (Tc)
10V
10.7mOhm @ 88A, 10V
4V @ 250µA
64 nC @ 10 V
±20V
4720 pF @ 100 V
-
340W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247
TO-247-3
PowerPAK 1212-8S
SISS94DN-T1-GE3
MOSFET N-CH 200V 5.4A/19.5A PPAK
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥7.22000
Cut Tape (CT)
3,000 : ¥2.98678
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
5.4A (Ta), 19.5A (Tc)
7.5V, 10V
75mOhm @ 5.4A, 10V
4V @ 250µA
21 nC @ 10 V
±20V
350 pF @ 100 V
-
5.1W (Ta), 65.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
Showing
of 16

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.