Single FETs, MOSFETs

Results: 14
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDDiodes IncorporatedInfineon TechnologiesNexperia USA Inc.Vishay Siliconix
Series
-OptiMOS™TrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V40 V60 V120 V500 V
Current - Continuous Drain (Id) @ 25°C
340mA (Ta)1A (Ta)2.5A (Ta)12A (Ta)12A (Tc)13.5A (Ta), 40A (Tc)14A (Ta)18A (Tc)20A (Tc)30A (Tc)35A (Tc)37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
4.9mOhm @ 22A, 10V7.2mOhm @ 15A, 10V8.6mOhm @ 20A, 10V9.4mOhm @ 15A, 10V10mOhm @ 16.1A, 10V10.5mOhm @ 15A, 10V15mOhm @ 7A, 10V24mOhm @ 20A, 10V24mOhm @ 7.8A, 10V25mOhm @ 9.3A, 10V90mOhm @ 2.5A, 10V270mOhm @ 10A, 10V270mOhm @ 1A, 4.5V5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
1.25V @ 250µA2V @ 250µA2.5V @ 250µA2.8V @ 250µA3V @ 250µA3.1V @ 105µA4V @ 35µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.2 nC @ 4.5 V2.4 nC @ 10 V8.2 nC @ 10 V12 nC @ 10 V27 nC @ 10 V30 nC @ 4.5 V31 nC @ 10 V50 nC @ 10 V57.5 nC @ 10 V62 nC @ 10 V71 nC @ 10 V76 nC @ 10 V102 nC @ 10 V110 nC @ 10 V
Vgs (Max)
±12V±16V±20V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
18 pF @ 30 V79.3 pF @ 15 V371.3 pF @ 15 V435 pF @ 15 V1160 pF @ 20 V1870 pF @ 15 V1900 pF @ 60 V1980 pF @ 20 V2230 pF @ 15 V2942 pF @ 25 V3595 pF @ 15 V4280 pF @ 15 V4785 pF @ 15 V
Power Dissipation (Max)
330mW (Ta), 2.1W (Tc)350mW (Ta)760mW (Ta)1.5W (Ta)2.1W (Ta), 69W (Tc)3.2W (Ta), 15.6W (Tc)3.5W (Ta), 27.8W (Tc)3.7W (Ta), 39W (Tc)3.7W (Ta), 52W (Tc)4.2W (Ta), 35.7W (Tc)4.8W (Ta), 41.7W (Tc)66W (Tc)250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-50°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TSDSON-8PowerPAK® 1212-8PowerPAK® SO-8SOT-23SOT-23-3TO-236ABTO-247AC
Package / Case
8-PowerTDFNPowerPAK® 1212-8PowerPAK® SO-8TO-236-3, SC-59, SOT-23-3TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK 1212-8
SIS412DN-T1-GE3
MOSFET N-CH 30V 12A PPAK1212-8
Vishay Siliconix
66,614
In Stock
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.77229
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
12A (Tc)
4.5V, 10V
24mOhm @ 7.8A, 10V
2.5V @ 250µA
12 nC @ 10 V
±20V
435 pF @ 15 V
-
3.2W (Ta), 15.6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
PowerPAK 1212-8
SIS413DN-T1-GE3
MOSFET P-CH 30V 18A PPAK 1212-8
Vishay Siliconix
56,729
In Stock
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.77229
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
18A (Tc)
4.5V, 10V
9.4mOhm @ 15A, 10V
2.5V @ 250µA
110 nC @ 10 V
±20V
4280 pF @ 15 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
8-Power TDFN
BSZ086P03NS3GATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
Infineon Technologies
5,622
In Stock
1 : ¥7.06000
Cut Tape (CT)
5,000 : ¥2.78203
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
13.5A (Ta), 40A (Tc)
6V, 10V
8.6mOhm @ 20A, 10V
3.1V @ 105µA
57.5 nC @ 10 V
±25V
4785 pF @ 15 V
-
2.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
PowerPAK SO-8
SIR426DP-T1-GE3
MOSFET N-CH 40V 30A PPAK SO-8
Vishay Siliconix
48,694
In Stock
1 : ¥8.21000
Cut Tape (CT)
3,000 : ¥3.39533
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
30A (Tc)
4.5V, 10V
10.5mOhm @ 15A, 10V
2.5V @ 250µA
31 nC @ 10 V
±20V
1160 pF @ 20 V
-
4.8W (Ta), 41.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PowerPAK 1212-8
SI7101DN-T1-GE3
MOSFET P-CH 30V 35A PPAK 1212-8
Vishay Siliconix
9,957
In Stock
1 : ¥9.85000
Cut Tape (CT)
3,000 : ¥4.07441
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
35A (Tc)
4.5V, 10V
7.2mOhm @ 15A, 10V
2.5V @ 250µA
102 nC @ 10 V
±25V
3595 pF @ 15 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
PowerPAK 1212-8
SI7611DN-T1-GE3
MOSFET P-CH 40V 18A PPAK1212-8
Vishay Siliconix
13,712
In Stock
1 : ¥12.97000
Cut Tape (CT)
3,000 : ¥5.84464
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
18A (Tc)
4.5V, 10V
25mOhm @ 9.3A, 10V
3V @ 250µA
62 nC @ 10 V
±20V
1980 pF @ 20 V
-
3.7W (Ta), 39W (Tc)
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
TO-247-3 AC EP
SIHG20N50C-E3
MOSFET N-CH 500V 20A TO247AC
Vishay Siliconix
9,635
In Stock
1 : ¥23.97000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
20A (Tc)
10V
270mOhm @ 10A, 10V
5V @ 250µA
76 nC @ 10 V
±30V
2942 pF @ 25 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SOT-23-3
DMG2307L-7
MOSFET P-CH 30V 2.5A SOT-23
Diodes Incorporated
105,681
In Stock
645,000
Factory
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.70201
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
30 V
2.5A (Ta)
4.5V, 10V
90mOhm @ 2.5A, 10V
3V @ 250µA
8.2 nC @ 10 V
±20V
371.3 pF @ 15 V
-
760mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-236AB
BSH103BKR
BSH103BK - 30 V, N-CHANNEL TRENC
Nexperia USA Inc.
19,873
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.59042
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1A (Ta)
1.8V, 4.5V
270mOhm @ 1A, 4.5V
1.25V @ 250µA
1.2 nC @ 4.5 V
±12V
79.3 pF @ 15 V
-
330mW (Ta), 2.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
PowerPAK 1212-8
SI7121ADN-T1-GE3
MOSFET P-CH 30V 12A PPAK1212-8
Vishay Siliconix
9,255
In Stock
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.86681
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
12A (Ta)
4.5V, 10V
15mOhm @ 7A, 10V
2.5V @ 250µA
50 nC @ 10 V
±25V
1870 pF @ 15 V
-
3.5W (Ta), 27.8W (Tc)
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
PowerPAK SO-8
SI7143DP-T1-GE3
MOSFET P-CH 30V 35A PPAK SO-8
Vishay Siliconix
1,435
In Stock
1 : ¥10.92000
Cut Tape (CT)
3,000 : ¥4.52713
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
35A (Tc)
4.5V, 10V
10mOhm @ 16.1A, 10V
2.8V @ 250µA
71 nC @ 10 V
±20V
2230 pF @ 15 V
-
4.2W (Ta), 35.7W (Tc)
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PowerPAK 1212-8
SI7108DN-T1-E3
MOSFET N-CH 20V 14A PPAK1212-8
Vishay Siliconix
15,560
In Stock
1 : ¥11.08000
Cut Tape (CT)
3,000 : ¥6.62390
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
14A (Ta)
4.5V, 10V
4.9mOhm @ 22A, 10V
2V @ 250µA
30 nC @ 4.5 V
±16V
-
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
8-Power TDFN
BSZ240N12NS3GATMA1
MOSFET N-CH 120V 37A 8TSDSON
Infineon Technologies
8,358
In Stock
1 : ¥13.05000
Cut Tape (CT)
5,000 : ¥5.67056
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
120 V
37A (Tc)
10V
24mOhm @ 20A, 10V
4V @ 35µA
27 nC @ 10 V
±20V
1900 pF @ 60 V
-
66W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
2N7002E
2N7002EY
N-CHANNEL SMD MOSFET ESD PROTECT
ANBON SEMICONDUCTOR (INT'L) LIMITED
77,424
In Stock
1 : ¥1.15000
Cut Tape (CT)
3,000 : ¥0.19369
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
340mA (Ta)
4.5V, 10V
5Ohm @ 300mA, 10V
2.5V @ 250µA
2.4 nC @ 10 V
±20V
18 pF @ 30 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
Showing
of 14

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.