IMZA65R039M1HXKSA1

DigiKey Part Number
448-IMZA65R039M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZA65R039M1HXKSA1
Description
SILICON CARBIDE MOSFET, PG-TO247
Manufacturer Standard Lead Time
26 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 50A (Tc) 176W (Tc) Through Hole PG-TO247-4-3
Datasheet
 Datasheet
EDA/CAD Models
IMZA65R039M1HXKSA1 Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
50mOhm @ 25A, 18V
Vgs(th) (Max) @ Id
5.7V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 18 V
Vgs (Max)
+20V, -2V
Input Capacitance (Ciss) (Max) @ Vds
1393 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
176W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-3
Package / Case
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥106.07000¥106.07
30¥85.85600¥2,575.68
120¥80.80500¥9,696.60
510¥73.22951¥37,347.05
1,020¥67.16910¥68,512.48
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.