COMPUTER

Key Components for Stationary Computing

Stationary Computing
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CAPACITORS

TR3

TR3

Molded Case SMD Tantalum Chip Capacitor

Features

  • Low ESR
  • 100 % surge current tested (C, D, and E case sizes)
  • Molded case available in seven case codes
  • Terminations: 100 % matte tin, standard tin/lead available

Datasheet icon link TR3

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RESISTORS, NON-LINEAR

NTCS0603E3

NTCS0603E3

Glass-Protected SMD 0603 NTC Thermistor

Features

  • Tolerance on R25 down to 1 %, and on B25/85 down to 1 %
  • High operating temperature up to 150 °C

Datasheet icon link NTCS0603E3

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MOSFETs

SiRA10DP/SiRA00DP

SiRA10DP/SiRA00DP

Single, 30 V N-Channel Power MOSFETs

Features

  • Highly efficient TrenchFET® Gen IV technology for increased power density
  • Thermally enhanced PowerPAK® SO-8 packaging
  • Maximum on-resistance down to 0.001 Ω
  • Typical gate charge down to 34 nC at VGS = 10 V

Datasheet icon link SiRA10DP Datasheet icon link SiRA00DP

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OPTOELECTRONICS

VLMx1300

VLMx1300

0603 LED Indicator

Features

  • Super red, soft orange, yellow, yellowgreen, true-green, and blue
  • Exceptionally bright in a ChipLED package
  • Viewing angle of 130°
  • 1.6 mm x 0.8 mm x 0.8 mm height

Datasheet icon link VLMS1300, VLMO1300, VLMY1300, VLMG1300, VLMTG1300, VLMB1300, VLMB1310

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MOSFETs

SiHP22N60E/SiHG47N60E

SiHP22N60E/SiHG47N60E

Single, 600 V N-Channel Power MOSFETs

Features

  • High performance E Series high-voltage Super Junction technology
  • Maximum current up to 47 A
  • TO-220 and TO-247 packaging
  • Maximum on-resistance down to 0.064 Ω atVGS = 10 V

Datasheet icon link SiHP22N60E Datasheet icon link SiHG47N60E

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OPTOELECTRONICS

TCZT8020

TCZT8020 - Door or Blade Sensor

Matched Emitter/Detector Pair

Features

  • Typical output current under test: IC = 0.5 mA with gap width of 4 mm
  • Transmissive or reflective sensor with 2-pin through hole components
  • Variable gap width; based on application
  • Angle of half intensity: ± 25°

Datasheet icon link TCZT8020

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ICs

SiC780

SiC780

50 A, 16 V DrMOS Integrated Power Stage

Features

  • 93 % peak efficiency
  • High switching frequency up to 1 MHz
  • Compliant with Intel DrMOS 4.0 specifications
  • Packaged in a 40 lead QFN,
    6 mm x 6 mm x 0.75 mm

Datasheet icon link SiC780

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DIODES

SMCJxx

SMCJxx

1500 W SMC TRANSZORB® TVS VWM = 5 V ∼ 188 V

Features

  • 1500 W peak pulse power capability at10/1000 µs waveform
  • Very fast response time
  • Low profile SMC package
  • Excellent clamping capability

Datasheet icon link SMCJ5.0A thru SMCJ188CA Datasheet icon link SMCJ5.0A thru SMCJ188CA (Halogen-Free)

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INDUCTORS

IHLP-2525CZ

IHLP-2525CZ

Low-Profile, High-Current IHLP® Inductor

Features

  • Shielded construction
  • Handles high transient current spikes without saturation
  • Ultra-low buzz noise due to composite construction
  • 100 % lead (Pb)-free and RoHS-compliant

Datasheet icon link IHLP-2525CZ-01 Datasheet icon link IHLP-2525CZ-06 Datasheet icon link IHLP-2525CZ-07
Datasheet icon link IHLP-2525CZ-11 Datasheet icon link IHLP-2525CZ-51 Datasheet icon link IHLP-2525CZ-1A
Datasheet icon link IHLP-2525CZ-5A Datasheet icon link IHLP-2525CZ-A1