Alternative Energy

Key Components for Solar Energy

  • Main Inverters up to 50 kW
  • Micro Inverters
  • PV Storage / PV Batteries
  • Junction Boxes

Main Inverters up to 50 kW

Aluminum Capacitors

Aluminum Electrolytic Capacitors, Power Ultra High Ripple Current, Snap-In for Solar

  • Specified for higher voltage, up to 600 V at specific operation conditions
  • Long useful life: 6000 h at +105 °C • > 25 years 24/7 application life at 60 °C
  • Tailored design for solar PV inverters. Customization possible

Film Capacitors

THB AC Filtering Metalized Polypropylene Film Capacitor

  • High robustness under high humidity, THB 85 °C, 85 % RH, 1000 h at rated UNAC
  • 1µF - 35µF 250 VAC, 310 VAC, 350 VAC, 480 VAC
  • FIT: < 10 x 10-9/h . Series Constrution for Y310VAC

ICs

THB DC-Link Metallized Polypropylene Film Capacitors, Radial Type, 85 °C / 85 % RH 1000 h at UNDC

  • High robustness under high humidity: THB 85 °C / 85 % RH / 1000 h at rated voltage
  • High ripple current capability, low ESR, low ESL
  • Widest range of cases, voltages and capacitances

Resistors

Power Metal Strip® Resistors, Very High Power (to 12 W), Low Value, SMD

  • 4-Terminal Kelvin construction. Low TCR high precision
  • Very low inductance 0.5 nH to 5 nH
  • Low thermal EMF (< 3 μV/°C)
  • 200µΩ to 5mΩ

Thin Film Resistors

Professional High Voltage Thin Film MELF Resistors

  • High operating voltage, Umax. = 1000 V
  • Excellent pulse load capability
  • 340 kΩ to 10 MΩ and thight VCR < 2 ppm/V

Inductors

High Current Through-Hole Inductors Edge-Wound Series

  • Powdered iron alloy core for stable inductance & saturation over operating temp
  • High temperature continuous operation, up to 180 °C with no aging
  • Isolation up to 350VDC - customization possible

Diode and Rectifiers

1200 V Power SiC Gen 3 Merged PIN Schottky Diode, 30 A

  • Improved VF and efficiency by thin wafer technology
  • MPS structure for high ruggedness to forward current surge events
  • Low Losses by virtually no recovery tail and no switching losses

Power Rectifiers

Ultrafast Rectifier, 2 x 15 A FRED Pt®

  • Ultrafast recovery time, reduced Qrr, and soft recovery in MPPT
  • 175 °C maximum operating junction temperature
  • For PFC CRM, snubber operation

Film Capacitors

THB AC and Pulse Metallized Polypropylene Film Capacitors

  • High temperature operation up to 125 °C
  • THB 60 °C 93 % RH for 56 days at rated voltage
  • Ideal as LLC-Resonance Capacitors

MOSFETs

Single, 600 V and 1000 V N-Channel Power MOSFETs

  • High-performance E Series high-voltage Super Junction technology (SiHG47N60E)
  • Maximum current up to 47 A
  • TO-247 package
  • Maximum on-resistance of 0.064 Ω atVGS = 10 V for 600 V
  • Maximum on-resistance of 2 Ω at VGS = 10 V for 1000 V

Micro Inverters

Inductors

Surface-Mount, Common Mode Choke

  • Low SMD profile design compatible with automated pick and place assembly
  • Dielectric withstand voltage between coils to 1500 VDC
  • Custom options for inductance, impedance, DCR and current rating are available

Film Capacitors

Low Building Height Metallized Polypropylene DC-Link Film Capacitor - Industrial Grade

  • Very long useful life time: Up to 100 000 h at UNDC and 70 °C
  • Slim line, low building height
  • High ripple current capability, low ESR, low ESL
  • Temperature range: 105 °C

Capacitors

EMI Suppression Safety Capacitor, Ceramic Disc, Class X1, 760 VAC, Class Y1, 500 VAC

  • Singlelayer AC disc safety capacitors - SMD and Reflow
  • 1500 VDC rated
  • Encapsulation  made of flame retardant epoxy resin in accordance with UL 94 V-0

Power Rectifiers

Ultrafast Rectifier, 1 A FRED Pt®

  • Ultrafast recovery time, reduced Qrr, and soft recovery
  • 175 °C junction temp
  • Tiny SMF package. 600V and 1A
  • Bootstrapping and Freewheeling

Power Metal Plate

Power Metal Plate Current Sense Resistors, Low Value (10 to 500 mΩ), SMD, High Power

  • 2010 up to 3W at 70°C. 2512 up to 4W at 70°C
  • Wide resistance range. No power derating at higher resistance
  • Optimized for low drift and high load

Optoelectronics

Optocoupler, Phototransistor , Low Input Current, Long Creepage Mini-Flat Package

  • Isolation test voltage, 5000 VRMS, Isolation voltage VIORM = 1050 Vpeak
  • High common mode transient immunity
  • Rated at 1mA input current

Resistors

Cemented Leaded Wirewound Resistors

  • High pulse load performance, non-inductive option
  • WSZ-form lead bending available for SMD mounting
  • 1 - 10 W power dissipation. up to 27kΩ

Resistors

High Pulse Load Carbon Film MELF Resistors

  • CMB 0207 tested and certified according to EN IEC 62368-1
  • Up to 500VAC_RMS/DC  Up to 16 kV contact ESD capability
  • 2.2 Ω to 1.5 MΩ up to 1W dissipation

Resistors

Thin Film MELF Resistors

  • MELF resistor with high power rating
  • Best in class pulse load capability, Intrinsic sulfur resistance
  • low FIT-Rate and high stabilty of parameters

Diodes

600 W SMB/1500 W SMC TVS VWM = 5 V/VBR = 540 V

  • 1.5SMC540A: 1500 W peak pulse power capability with 10/1000 µs waveform
  • Unidirectional and bidirectional versions available
  • Excellent clamping capability

MOSFETs

Single, 150 V N-Channel Power MOSFET

  • Highly optimized medium voltage ThunderFET®technology
  • Thermally enhanced PowerPAK® SO-8 packaging
  • Maximum on-resistance down to 0.018 Ω
  • On-resistance rating down to VGS = 4.5 V
  • Typical gate charge of 31.3 nC at VGS = 10 V

MOSFETs

Single, 600 V N-Channel Power MOSFET

  • High-performance E Series high-voltage Super Junction technology
  • Maximum current of 21 A
  • D2PAK (TO-263) packaging
  • Maximum on-resistance of 0.18 Ω at VGS = 10 V

PV Storage / PV Batteries

Thermistors

PTC Thermistors, Inrush Current Limiter High Energy

  • Highly resistant against non-switching peak-powers of up to 25 kW
  • Can handle high direct voltage up to 1200 V
  • High number of inrush-power cycles: > 100 000 cycles

Small Signal Diodes

Small Signal Zener Diodes

  • Excellent stability, Surge rated, ± 2 % Zener voltage tolerance
  • Leadless ultra small DFN1006-2A package (1 mm × 0.6 mm × 0.45 mm)
  • Power dissipation better than SOT-23. AOI possible

Inductors

Commercial Power Inductor, Low DCR

  • Magnetically shielded composite construction - low EMI and soft saturation
  • Bottom plated terminals allow for a smaller pad layout for compact board spacing
  • From 0.33µH - 4.7µH

Resistors

Power Metal Strip® Resistors, Low Value (Down to 0.0003 Ω), Surface-Mount

  • Power Metal Strip®  for all types of current sensing in pulse applications
  • Solid metal nickel-chrome, manganese-copper, or manganese-copper-tin alloy
  • High power up to 10W

Resistors

Power Metal Strip® Shunt Resistor, Low TCR < ± 10 ppm/°C, Very Low Value >15 μΩ

  • Duel element for redundant current sensing
  • Solid metal nickel-chrome alloy resistive element with unique design for low TCR
  • Customization on request

Thermistors

NTC Thermistors, High Temperature Lug Sensors, 150 °C

  • 150 °C long term stability (5000 h dry heat)
  • Voltage between terminals and lug 2700 VAC
  • Cable test voltage 3.4 kV and customization possible

Diodes and Rectifiers

Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

  • 7A in small DFN3820A
  • High power density. low Vf with only 0.45V
  • Leadless DFN package with side-wettable flanks suitable for customer AOI

Aluminum Capacitors

vPolyTan™ Polymer Surface-Mount Chip Capacitors, Molded Case, High Performance Type

  • Ultra low ESR, 100 % surge current tested
  • Stable capacitance over temperature, voltage, frequency range and lifetime
  • Widest range of cases, voltages and capacitances

Diodes and Rectifiers

Surface-Mount Transzorb® Transient Voltage Suppressors

  • Bi-directional up to 600W in DFN3820
  • Up to 175°C junction temperature
  • Compatible to SMP (DO-220AA) package case outline

Junction Boxes

Optoelectronics

Optocoupler, Phototransistor Output, Very High Isolation Voltage

  • External creepage > 10 mm, Reinforced isolation
  • High common mode interference immunity
  • Internal shield for very high input to output noise isolation

Optoelectronics

High Speed Optocoupler, 25 MBd, SOIC-8 Package

  • CMOS logic digital input and output
  • High speed data rate of 25 MBd
  • Wide supply voltage range 2.7 V to 5.5 V
  • PLC and ATE interface isolation

Resistors

High Pulse Load Carbon Film MELF Resistors

  • CMB 0207 tested and certified according to EN IEC 62368-1
  • Up to 500VAC_RMS/DC  Up to 16 kV contact ESD capability
  • 2.2 Ω to 1.5 MΩ up to 1W dissipation

Capacitors

EMI Suppression Safety Capacitor, Ceramic Disc, Class X1, 760 VAC, Class Y1, 500 VAC

  • Singlelayer AC disc safety capacitors - SMD and Reflow
  • 1500 VDC rated
  • Encapsulation  made of flame retardant epoxy resin in accordance with UL 94 V-0

Thermistors

NTC Thermistors, High Temperature Lug Sensors, 150 °C

  • 150 °C long term stability (5000 h dry heat)
  • Voltage between terminals and lug 2700 VAC
  • Cable test voltage 3.4 kV and customization possible

Ceramic Capacitors

Surface Mount Multilayer Ceramic Chip Capacitor for Flex Sensitive Applications

  • Robust and reliable up to 3kV. Serial Design to avoid short
  • Polymer Soft-Termination for high stabilty of solder joint
  • Ideal as snubber

Resistors

Power Metal Strip® Resistors, Low Value (Down to 0.0003 Ω), Surface-Mount

  • Power Metal Strip®  for all types of current sensing in pulse applications
  • Solid metal nickel-chrome, manganese-copper, or manganese-copper-tin alloy
  • High power up to 10W

Resistors

Axial Cemented Fusible Leaded Wirewound Safety Resistors

  • UL1412 file no. E362452
  • Flameproof insulation coating meets UL 94 V-0 
  • 1W - 5W power rating. High peak power and energy rating
  • Impulse voltage handling capability up to 6 kV (1.2 / 50 μs pulse)

ICs

3.5 A, 78 mΩ, 2.8 V to 22 V eFuse With Accurate Current Limit, OVP, and Active Reverse Current Blocking

  • 0.3 A to 4.5 A current limit setting range, current limit accuracy of ± 8 %
  • Power Good Pin and current Monitoring pin
  • 6 A uni-directional parts available with SIP32434

Resistors

High Voltage Thin Film Flat Chip Resistors

  • High operating voltage 1000 V in 1210 size Low voltage coefficient < 1 ppm/V
  • Excellent overall stability at different environmental conditions ≤ 0.05 %
  • Down to 10ppm/K and 0.1% tolerance

MOSFETs

Single 30 V and 100 V N-Channel Power MOSFET

  • Highly optimized medium voltage ThunderFET®technology
  • Thermally enhanced PowerPAK® SO-8 packaging
  • Maximum on-resistance down to 3.5 mΩ
  • On-resistance rating down to VGS = 4.5 V

Rectifiers

20 A/30 A, 45 V TMBS in P600, ITO220

  • Trench MOS Schottky technology
  • Low forward voltage drop
  • P600 axial package, ITO220 package
  • RoHS-compliant, halogen-free

Diodes

400 W SMP TransZorb® TVS VWM = 11 V ∼ 36 V

  • Very low height profile 1.0 mm SMP package
  • 400 W peak pulse power capability with10/1000 µs waveform
  • Excellent clamping capability
  • Very fast response time

MOSFETs

Single 30 V and 100 V N-Channel Power MOSFET

  • Highly optimized medium voltage ThunderFET®technology
  • Thermally enhanced PowerPAK® SO-8 packaging
  • Maximum on-resistance down to 3.5 mΩ
  • On-resistance rating down to VGS = 4.5 V