Bipolar RF Transistors

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

MRF422 RF TRANS NPN 35V 211-11 MACOM Technology Solutions	256 In Stock 120 Factory	1 : ¥1,021.00000 Tray	-	Tray	Active	NPN	35V	-	-	13dB	150W	15 @ 5A, 5V	20A	-	Chassis Mount	211-11, Style 2	211-11, Style 2
KSP10TA RF TRANS NPN 25V 650MHZ TO92-3 onsemi	6,213 In Stock	1 : ¥3.20000 Cut Tape (CT) 2,000 : ¥0.56259 Tape & Box (TB)	-	Cut Tape (CT) Tape & Box (TB)	Active	NPN	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92-3
MRF393 RF TRANS 2NPN EMITTR 30V 744A-01 MACOM Technology Solutions	199 In Stock	1 : ¥1,307.01000 Tray	-	Tray	Active	2 NPN (Dual) Common Emitter	30V	-	-	8.5dB	100W	20 @ 1A, 5V	16A	200°C (TJ)	Chassis Mount	744A-01	744A-01, Style 1
MRF10031 RF TRANS NPN 55V 332A-03 MACOM Technology Solutions	0 In Stock Check Lead Time	1 : ¥1,818.12000 Tray	-	Tray	Active	NPN	55V	-	-	9.5dB	30W	20 @ 500mA, 5V	3A	200°C (TJ)	Chassis Mount	332A-03	332A-03, Style 2
MRF426 TRANS RF NPN 35V 3A 211-07 MACOM Technology Solutions	0 In Stock Check Lead Time	60 : ¥358.05750 Tray	-	Tray	Active	NPN	35V	-	-	25dB	25W	10 @ 1A, 5V	3A	-	Chassis Mount	211-07	211-07, STYLE 1
MRF429 TRANS RF NPN 50V 16A 211-11 MACOM Technology Solutions	0 In Stock Check Lead Time	60 : ¥529.14033 Tray	-	Tray	Active	NPN	50V	-	-	15dB	150W	10 @ 5A, 5V	16A	-	Chassis Mount	211-11, Style 2	211-11, Style 2
MAPR-002729-170M00 RF TRANS NPN 65V MACOM Technology Solutions	0 In Stock Check Lead Time	20 : ¥3,511.05600 Tray	-	Tray	Active	NPN	65V	-	-	9.11dB ~ 9.69dB	170W	-	27A	200°C (TJ)	Chassis Mount	-	-

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Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.