Single FETs, MOSFETs

Results: 27
Manufacturer
Infineon TechnologiesLittelfuse Inc.onsemiRohm SemiconductorSTMicroelectronicsWolfspeed, Inc.
Series
-C3M™CoolSiC™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)TrayTube
Product Status
ActiveNot For New Designs
Technology
SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V750 V1200 V
Current - Continuous Drain (Id) @ 25°C
24A (Tc)26A (Tc)30A (Tc)39A (Tc)40A (Tj)43A (Tc)45A (Tc)52A (Tc)54A (Tc)55A (Tc)55A (Tj)56A (Tc)58A (Tc)60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V15V, 18V18V20V-
Rds On (Max) @ Id, Vgs
28.6mOhm @ 36A, 18V34mOhm @ 29A, 18V39mOhm @ 27A, 18V43mOhm @ 40A, 15V47mOhm @ 21A, 18V50mOhm @ 40A, 20V52mOhm @ 20A, 18V52mOhm @ 30A, 18V53.5mOhm @ 33.3A, 15V54mOhm @ 20A, 18V56mOhm @ 35A, 20V59mOhm @ 20A, 15V78mOhm @ 13A, 18V81mOhm @ 12A, 18V
Vgs(th) (Max) @ Id
3.5V @ 1mA (Typ)3.6V @ 11.5mA3.6V @ 9.2mA4V @ 20mA4V @ 35.2mA4.3V @ 10mA4.4V @ 10mA4.8V @ 11.1mA4.8V @ 15.4mA4.8V @ 6.45mA5V @ 1mA5.6V @ 10mA5.6V @ 13.3mA5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 18 V51 nC @ 18 V52 nC @ 15 V58 nC @ 18 V60 nC @ 18 V64 nC @ 18 V75 nC @ 18 V91 nC @ 18 V94 nC @ 18 V99 nC @ 15 V104 nC @ 18 V105 nC @ 20 V106 nC @ 20 V107 nC @ 18 V
Vgs (Max)
+15V, -4V+20V, -10V+21V, -4V+22V, -10V+22V, -4V+22V, -6V+23V, -7V+25V, -10V+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
317 pF @ 800 V574 pF @ 800 V707 pF @ 800 V785 pF @ 800 V852 pF @ 500 V1337 pF @ 800 V1498 pF @ 800 V1526 pF @ 500 V1700 pF @ 400 V1700 pF @ 800 V1762 pF @ 800 V1781 pF @ 800 V1900 pF @ 800 V1969 pF @ 800 V
FET Feature
-Current Sensing
Power Dissipation (Max)
115W (Tc)115W134W150W159W165W176W228W (Tc)231W (Tc)262W (Tc)262W267W
Operating Temperature
-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)-40°C ~ 175°C (TJ)175°C (TJ)
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
HiP247™ Long LeadsModulePG-TO247-4-1TO-247-3TO-247-4TO-247-4LTO-247NTO-263-7TO-263-7L
Package / Case
ModuleTO-247-3TO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
27Results
Showing
of 27
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247-3
NTHL040N120SC1
SICFET N-CH 1200V 60A TO247-3
onsemi
437
In Stock
1 : ¥162.46000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
60A (Tc)
20V
56mOhm @ 35A, 20V
4.3V @ 10mA
106 nC @ 20 V
+25V, -15V
1781 pF @ 800 V
-
348W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4
NTH4L040N120SC1
SICFET N-CH 1200V 58A TO247-4
onsemi
875
In Stock
1 : ¥164.76000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
58A (Tc)
20V
56mOhm @ 35A, 20V
4.3V @ 10mA
106 nC @ 20 V
+25V, -15V
1762 pF @ 800 V
-
319W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C3M0065100K
C3M0040120K
1200V 40MOHM SIC MOSFET
Wolfspeed, Inc.
1,762
In Stock
1 : ¥221.82000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
66A (Tc)
15V
53.5mOhm @ 33.3A, 15V
3.6V @ 9.2mA
99 nC @ 15 V
+15V, -4V
2900 pF @ 1000 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247N
SCT3040KLGC11
SICFET N-CH 1200V 55A TO247N
Rohm Semiconductor
1,584
In Stock
1 : ¥313.84000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
18V
52mOhm @ 20A, 18V
5.6V @ 10mA
107 nC @ 18 V
+22V, -4V
1337 pF @ 800 V
-
262W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-247N
SCT3022KLGC11
SICFET N-CH 1200V 95A TO247N
Rohm Semiconductor
126
In Stock
1 : ¥413.42000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
95A (Tc)
18V
28.6mOhm @ 36A, 18V
5.6V @ 18.2mA
178 nC @ 10 V
+22V, -4V
2879 pF @ 800 V
-
427W
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
MOSFETTO247
IMZ120R090M1HXKSA1
SICFET N-CH 1.2KV 26A TO247-4
Infineon Technologies
447
In Stock
1 : ¥88.66000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
26A (Tc)
15V, 18V
117mOhm @ 8.5A, 18V
5.7V @ 3.7mA
21 nC @ 18 V
+23V, -7V
707 pF @ 800 V
-
115W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
TO-247N
SCT4062KEC11
1200V, 62M, 3-PIN THD, TRENCH-ST
Rohm Semiconductor
4,744
In Stock
1 : ¥119.20000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
26A (Tc)
18V
81mOhm @ 12A, 18V
4.8V @ 6.45mA
64 nC @ 18 V
+21V, -4V
1498 pF @ 800 V
-
115W
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
CoolSiC Series
IMZ120R045M1XKSA1
SICFET N-CH 1200V 52A TO247-4
Infineon Technologies
214
In Stock
1 : ¥142.84000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1200 V
52A (Tc)
15V
59mOhm @ 20A, 15V
5.7V @ 10mA
52 nC @ 15 V
+20V, -10V
1900 pF @ 800 V
Current Sensing
228W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
SCT4026DW7HRTL
SCT4036KW7TL
1200V, 40A, 7-PIN SMD, TRENCH-ST
Rohm Semiconductor
796
In Stock
1 : ¥160.74000
Cut Tape (CT)
1,000 : ¥101.81799
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
40A (Tj)
18V
47mOhm @ 21A, 18V
4.8V @ 11.1mA
91 nC @ 18 V
+21V, -4V
2335 pF @ 800 V
-
150W
175°C (TJ)
-
-
Surface Mount
TO-263-7L
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT4026DRHRC15
SCT4036KRC15
1200V, 36M, 4-PIN THD, TRENCH-ST
Rohm Semiconductor
4,781
In Stock
1 : ¥177.32000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
43A (Tc)
18V
47mOhm @ 21A, 18V
4.8V @ 11.1mA
91 nC @ 18 V
+21V, -4V
2335 pF @ 800 V
-
176W
175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247N
SCT4036KEC11
1200V, 36M, 3-PIN THD, TRENCH-ST
Rohm Semiconductor
4,714
In Stock
1 : ¥177.32000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
43A (Tc)
18V
47mOhm @ 21A, 18V
4.8V @ 11.1mA
91 nC @ 18 V
+21V, -4V
2335 pF @ 800 V
-
176W
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
SCT4026DRHRC15
SCT4036KRHRC15
1200V, 43A, 4-PIN THD, TRENCH-ST
Rohm Semiconductor
336
In Stock
1 : ¥182.58000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
43A (Tc)
18V
47mOhm @ 21A, 18V
4.8V @ 11.1mA
91 nC @ 18 V
+21V, -4V
2335 pF @ 800 V
-
176W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
C2D10120D
C3M0032120D
SICFET N-CH 1200V 63A TO247-3
Wolfspeed, Inc.
263
In Stock
1 : ¥297.18000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
63A (Tc)
15V
43mOhm @ 40A, 15V
3.6V @ 11.5mA
114 nC @ 15 V
+15V, -4V
3357 pF @ 1000 V
-
283W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
SCT3series
SCT3080KW7TL
SICFET N-CH 1200V 30A TO263-7
Rohm Semiconductor
785
In Stock
1 : ¥157.78000
Cut Tape (CT)
1,000 : ¥99.95430
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A (Tc)
-
104mOhm @ 10A, 18V
5.6V @ 5mA
60 nC @ 18 V
+22V, -4V
785 pF @ 800 V
-
159W
175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT4026DRHRC15
SCT3105KRC14
SICFET N-CH 1200V 24A TO247-4L
Rohm Semiconductor
102
In Stock
1 : ¥171.82000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
24A (Tc)
18V
137mOhm @ 7.6A, 18V
5.6V @ 3.81mA
51 nC @ 18 V
+22V, -4V
574 pF @ 800 V
-
134W
175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
SCT4026DRHRC15
SCT3060ARC14
SICFET N-CH 650V 39A TO247-4L
Rohm Semiconductor
350
In Stock
1 : ¥191.61000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
78mOhm @ 13A, 18V
5.6V @ 6.67mA
58 nC @ 18 V
+22V, -4V
852 pF @ 500 V
-
165W
175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4
NVH4L040N120SC1
SICFET N-CH 1200V 58A TO247-4
onsemi
364
In Stock
1 : ¥219.93000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
58A (Tc)
20V
56mOhm @ 35A, 20V
4.3V @ 10mA
106 nC @ 20 V
+25V, -15V
1762 pF @ 800 V
-
319W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
SCT3series
SCT3040KW7TL
SICFET N-CH 1200V 56A TO263-7
Rohm Semiconductor
998
In Stock
1 : ¥306.37000
Cut Tape (CT)
1,000 : ¥212.22838
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
56A (Tc)
-
52mOhm @ 20A, 18V
5.6V @ 10mA
107 nC @ 18 V
+22V, -4V
1337 pF @ 800 V
-
267W
175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT3series
SCT3030AW7TL
SICFET N-CH 650V 70A TO263-7
Rohm Semiconductor
437
In Stock
1 : ¥312.61000
Cut Tape (CT)
1,000 : ¥204.08635
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
70A (Tc)
-
39mOhm @ 27A, 18V
5.6V @ 13.3mA
104 nC @ 18 V
+22V, -4V
1526 pF @ 500 V
-
267W
175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247N
SCT3040KLHRC11
SICFET N-CH 1200V 55A TO247N
Rohm Semiconductor
871
In Stock
1 : ¥312.78000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
18V
52mOhm @ 20A, 18V
5.6V @ 10mA
107 nC @ 18 V
+22V, -4V
1337 pF @ 800 V
-
262W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247N
TO-247-3
TO-247-4
NTH4L040N120M3S
SILICON CARBIDE (SIC) MOSFET ELI
onsemi
185
In Stock
29,700
Factory
1 : ¥109.92000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
54A (Tc)
18V
54mOhm @ 20A, 18V
4.4V @ 10mA
75 nC @ 18 V
+22V, -10V
1700 pF @ 800 V
-
231W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
SCT4026DRHRC15
SCT4026DRHRC15
750V, 56A, 4-PIN THD, TRENCH-STR
Rohm Semiconductor
462
In Stock
1 : ¥179.70000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
750 V
56A (Tc)
18V
34mOhm @ 29A, 18V
4.8V @ 15.4mA
94 nC @ 18 V
+21V, -4V
2320 pF @ 500 V
-
176W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
SCT4026DRHRC15
SCT3040KRC15
1200V, 55A, 4-PIN THD, TRENCH-ST
Rohm Semiconductor
395
In Stock
1 : ¥214.35000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
55A (Tj)
18V
52mOhm @ 20A, 18V
5.6V @ 10mA
107 nC @ 18 V
+22V, -4V
1337 pF @ 800 V
-
262W
175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
SCTWA30N120
SCTWA30N120
IC POWER MOSFET 1200V HIP247
STMicroelectronics
294
In Stock
1 : ¥247.84000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
45A (Tc)
20V
100mOhm @ 20A, 20V
3.5V @ 1mA (Typ)
105 nC @ 20 V
+25V, -10V
1700 pF @ 400 V
-
270W (Tc)
-55°C ~ 200°C (TJ)
-
-
Through Hole
HiP247™ Long Leads
TO-247-3
BSM180C12P2E202
BSM180C12P2E202
SICFET N-CH 1200V 204A MODULE
Rohm Semiconductor
4
In Stock
1 : ¥5,293.22000
Tray
-
Tray
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
204A (Tc)
-
-
4V @ 35.2mA
-
+22V, -6V
20000 pF @ 10 V
-
1360W (Tc)
175°C (TJ)
-
-
Chassis Mount
Module
Module
Showing
of 27

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.