3.7A (Tc) Single FETs, MOSFETs

Results: 16
Manufacturer
Diodes IncorporatedInfineon TechnologiesonsemiRohm SemiconductorSTMicroelectronicsVishay Siliconix
Series
-CoolMOS™CoolMOS™ CELITTLE FOOT®MDmesh™ II PlusQFET®UniFET-II™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
20 V200 V400 V500 V600 V1700 V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V10V13V18V
Rds On (Max) @ Id, Vgs
144mOhm @ 2.5A, 4.5V950mOhm @ 1.2A, 13V1Ohm @ 2.1A, 10V1.4Ohm @ 1.85A, 10V1.5Ohm @ 1.1A, 18V1.75Ohm @ 1.85A, 10V2.1Ohm @ 760mA, 10V2.1Ohm @ 800mA, 10V2.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA3.5V @ 100µA3.5V @ 60µA4V @ 250µA4V @ 900µA4.5V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 10 V6.7 nC @ 10 V6.8 nC @ 5 V10.5 nC @ 10 V12 nC @ 10 V13 nC @ 10 V14 nC @ 18 V14.3 nC @ 10 V38 nC @ 10 V
Vgs (Max)
±8V±20V+22V, -6V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 100 V165 pF @ 100 V184 pF @ 800 V231 pF @ 100 V276 pF @ 10 V430 pF @ 25 V485 pF @ 25 V532 pF @ 25 V700 pF @ 25 V
FET Feature
-Schottky Diode (Isolated)
Power Dissipation (Max)
1.3W (Ta), 2.8W (Tc)2.5W (Ta), 45W (Tc)5W (Tc)20W (Tc)25.7W (Tc)35W (Tc)38W (Tc)45W (Tc)48W (Ta)62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
1206-8 ChipFET™IPAKPG-SOT223-3PG-TO220-3-FPPG-TO251-3TO-220TO-220-3TO-220FPTO-252-3TO-252AATO-3PFM
Package / Case
8-SMD, Flat LeadsTO-220-3 Full PackTO-220-3 Full Pack, Isolated TabTO-220-3TO-251-3 Short Leads, IPAK, TO-251AATO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AATO-3PFM, SC-93-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-SOT223-3
IPN60R2K1CEATMA1
MOSFET N-CH 600V 3.7A SOT223
Infineon Technologies
8,209
In Stock
1 : ¥4.52000
Cut Tape (CT)
3,000 : ¥1.53362
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
3.7A (Tc)
10V
2.1Ohm @ 800mA, 10V
3.5V @ 60µA
6.7 nC @ 10 V
±20V
140 pF @ 100 V
-
5W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-3
TO-261-4, TO-261AA
TO-3PFM
SCT2H12NZGC11
SICFET N-CH 1700V 3.7A TO3PFM
Rohm Semiconductor
2,221
In Stock
1 : ¥59.19000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
3.7A (Tc)
18V
1.5Ohm @ 1.1A, 18V
4V @ 900µA
14 nC @ 18 V
+22V, -6V
184 pF @ 800 V
-
35W (Tc)
175°C (TJ)
Through Hole
TO-3PFM
TO-3PFM, SC-93-3
TO-220-F
STF5N60M2
MOSFET N-CH 600V 3.7A TO220FP
STMicroelectronics
1,961
In Stock
1 : ¥12.15000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
3.7A (Tc)
10V
1.4Ohm @ 1.85A, 10V
4V @ 250µA
4.5 nC @ 10 V
±25V
165 pF @ 100 V
-
20W (Tc)
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
TO-220AB Full Pack
IRFI730GPBF
MOSFET N-CH 400V 3.7A TO220-3
Vishay Siliconix
1,270
In Stock
1 : ¥17.08000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
400 V
3.7A (Tc)
10V
1Ohm @ 2.1A, 10V
4V @ 250µA
38 nC @ 10 V
±20V
700 pF @ 25 V
-
35W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
I-Pak
STU5N60M2
MOSFET N-CH 600V 3.7A IPAK
STMicroelectronics
831
In Stock
1 : ¥10.75000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
3.7A (Tc)
10V
1.4Ohm @ 1.85A, 10V
4V @ 250µA
4.5 nC @ 10 V
±25V
165 pF @ 100 V
-
45W (Tc)
150°C (TJ)
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
TO-252AA
FQD5P20TM
MOSFET P-CH 200V 3.7A DPAK
onsemi
0
In Stock
Check Lead Time
1 : ¥7.63000
Cut Tape (CT)
2,500 : ¥2.88884
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
3.7A (Tc)
10V
1.4Ohm @ 1.85A, 10V
5V @ 250µA
13 nC @ 10 V
±30V
430 pF @ 25 V
-
2.5W (Ta), 45W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
0
In Stock
Check Lead Time
1 : ¥5.25000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
3.7A (Tc)
10V
2.1Ohm @ 760mA, 10V
3.5V @ 60µA
6.7 nC @ 10 V
±20V
140 pF @ 100 V
-
38W (Tc)
-40°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPAK, TO-251AA
PG-TO220-3-FP
IPA50R950CEXKSA2
MOSFET N-CH 500V 3.7A TO220
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥7.55000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
3.7A (Tc)
13V
950mOhm @ 1.2A, 13V
3.5V @ 100µA
10.5 nC @ 10 V
±20V
231 pF @ 100 V
-
25.7W (Tc)
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-FP
TO-220-3 Full Pack
TO-252AA
FQD5P20TF
MOSFET P-CH 200V 3.7A DPAK
onsemi
0
In Stock
2,000 : ¥2.84750
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
P-Channel
MOSFET (Metal Oxide)
200 V
3.7A (Tc)
10V
1.4Ohm @ 1.85A, 10V
5V @ 250µA
13 nC @ 10 V
±30V
430 pF @ 25 V
-
2.5W (Ta), 45W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
DMG4N60SK3-13
MOSFET N-CH 600V 3.7A TO252 T&R
Diodes Incorporated
0
In Stock
1 : ¥7.14000
Cut Tape (CT)
2,500 : ¥2.71752
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
3.7A (Tc)
10V
2.3Ohm @ 2A, 10V
4.5V @ 250µA
14.3 nC @ 10 V
±30V
532 pF @ 25 V
-
48W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220-3
STP5N60M2
MOSFET N-CH 600V 3.7A TO220
STMicroelectronics
15
In Stock
1 : ¥12.48000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
3.7A (Tc)
10V
1.4Ohm @ 1.85A, 10V
4V @ 250µA
4.5 nC @ 10 V
±25V
165 pF @ 100 V
-
45W (Tc)
150°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220AB Full Pack
IRFI730G
MOSFET N-CH 400V 3.7A TO220-3
Vishay Siliconix
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
400 V
3.7A (Tc)
10V
1Ohm @ 2.1A, 10V
4V @ 250µA
38 nC @ 10 V
±20V
700 pF @ 25 V
-
35W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
I-PAK
FQU5P20TU
MOSFET P-CH 200V 3.7A IPAK
onsemi
0
In Stock
Obsolete
Tube
Obsolete
P-Channel
MOSFET (Metal Oxide)
200 V
3.7A (Tc)
10V
1.4Ohm @ 1.85A, 10V
5V @ 250µA
13 nC @ 10 V
±30V
430 pF @ 25 V
-
2.5W (Ta), 45W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
TO-252AA
FQD5P20TM_F080
MOSFET P-CH 200V 3.7A DPAK
onsemi
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
P-Channel
MOSFET (Metal Oxide)
200 V
3.7A (Tc)
10V
1.4Ohm @ 1.85A, 10V
5V @ 250µA
13 nC @ 10 V
±30V
430 pF @ 25 V
-
2.5W (Ta), 45W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
FDD5N50NZFTM
MOSFET N-CH 500V 3.7A DPAK
onsemi
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Obsolete
N-Channel
MOSFET (Metal Oxide)
500 V
3.7A (Tc)
10V
1.75Ohm @ 1.85A, 10V
5V @ 250µA
12 nC @ 10 V
±25V
485 pF @ 25 V
-
62.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
Pkg 5547
SI5855CDC-T1-E3
MOSFET P-CH 20V 3.7A 1206-8
Vishay Siliconix
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
3.7A (Tc)
1.8V, 4.5V
144mOhm @ 2.5A, 4.5V
1V @ 250µA
6.8 nC @ 5 V
±8V
276 pF @ 10 V
Schottky Diode (Isolated)
1.3W (Ta), 2.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
1206-8 ChipFET™
8-SMD, Flat Leads
Showing
of 16

3.7A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.