Single FETs, MOSFETs

Results: 104
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)TrayTube
Product Status
ActiveNot For New Designs
FET Type
-N-Channel
Technology
MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V750 V1200 V1700 V2000 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Tc)5.2A (Tc)5.4A (Tj)7.4A (Tc)7.5A (Tc)9.8A (Tc)10A (Tj)13A (Tc)16A (Tj)17A (Tc)18A (Tc)19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V, 18V12V, 15V15V15V, 18V15V, 20V18V-
Rds On (Max) @ Id, Vgs
6.1mOhm @ 146.3A, 20V9.9mOhm @ 108A, 18V10.6mOhm @ 90.3A, 18V15mOhm @ 41.5A, 20A15mOhm @ 41.5A, 20V16.5mOhm @ 60A, 18V18mOhm @ 32.5A, 20V18mOhm @ 34.1A, 20V18.4mOhm @ 54.3A, 18V22mOhm @ 41.5A, 18V25mOhm @ 24.5A, 20V26.9mOhm @ 41A, 18V
Vgs(th) (Max) @ Id
5.2V @ 10mA5.2V @ 11mA5.2V @ 17.6mA5.2V @ 23.4mA5.2V @ 47mA5.2V @ 8.3mA5.5V @ 12.1mA5.5V @ 24mA5.5V @ 48mA5.5V @ 6mA5.5V @ 7.7mA5.6V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 12 V5.3 nC @ 18 V5.5 nC @ 12 V5.9 nC @ 18 V8 nC @ 12 V8.1 nC @ 12 V8.5 nC @ 18 V9.4 nC @ 18 V11 nC @ 12 V11.7 nC @ 12 V12 nC @ 18 V13 nC @ 18 V
Vgs (Max)
15V, 12V+18V, -15V+20V, -10V+20V, -2V+20V, -5V+20V, -7V+23V, -5V+23V, -7V-
Input Capacitance (Ciss) (Max) @ Vds
182 pF @ 800 V196 pF @ 800 V233 pF @ 1000 V275 pF @ 1000 V289 pF @ 800 V312 pF @ 800 V337 pF @ 1000 V351 pF @ 500 V422 pF @ 1000 V454 pF @ 800 V491 pF @ 800 V496 pF @ 400 V
FET Feature
-Current Sensing
Power Dissipation (Max)
60W (Tc)65W (Tc)68W (Tc)70W (Tc)75W (Tc)83W (Tc)86W (Tc)88W (Tc)94W (Tc)96W (Tc)100W (Tc)104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C-40°C ~ 175°C (TJ)-
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-HDSOP-22PG-HDSOP-22-1PG-HSOF-8-2PG-TO247-3PG-TO247-3-41PG-TO247-3-U04PG-TO247-3-U06PG-TO247-4PG-TO247-4-1PG-TO247-4-3PG-TO247-4-8PG-TO247-4-U02PG-TO247-4-U04PG-TO263-7
Package / Case
8-PowerSFN22-PowerBSOP ModuleTO-247-3TO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PG-TO263-7
IMBF170R1K0M1XTMA1
SICFET N-CH 1700V 5.2A TO263-7
Infineon Technologies
3,037
In Stock
1 : ¥40.47000
Cut Tape (CT)
1,000 : ¥20.93301
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.2A (Tc)
12V, 15V
1000mOhm @ 1A, 15V
5.7V @ 1.1mA
5 nC @ 12 V
+20V, -10V
275 pF @ 1000 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7
IMBF170R650M1XTMA1
SICFET N-CH 1700V 7.4A TO263-7
Infineon Technologies
1,893
In Stock
1 : ¥45.81000
Cut Tape (CT)
1,000 : ¥23.68635
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
7.4A (Tc)
12V, 15V
650mOhm @ 1.5A, 15V
5.7V @ 1.7mA
8 nC @ 12 V
+20V, -10V
422 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG120R350M1HXTMA1
IMBG120R350M1HXTMA1
SICFET N-CH 1.2KV 4.7A TO263
Infineon Technologies
1,029
In Stock
1 : ¥51.39000
Cut Tape (CT)
1,000 : ¥29.05485
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
4.7A (Tc)
-
468mOhm @ 2A, 18V
5.7V @ 1mA
5.9 nC @ 18 V
+18V, -15V
196 pF @ 800 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7
IMBF170R450M1XTMA1
SICFET N-CH 1700V 9.8A TO263-7
Infineon Technologies
1,512
In Stock
1 : ¥51.72000
Cut Tape (CT)
1,000 : ¥29.35030
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
9.8A (Tc)
12V, 15V
450mOhm @ 2A, 15V
5.7V @ 2.5mA
11 nC @ 12 V
+20V, -10V
610 pF @ 1000 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-13
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
CoolSiC Series
IMZ120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-4
Infineon Technologies
261
In Stock
1 : ¥95.06000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
+23V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
TO-247-3 AC EP
IMW120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-3
Infineon Technologies
236
In Stock
1 : ¥98.27000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
+23V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-3 AC EP
AIMW120R080M1XKSA1
1200V COOLSIC MOSFET PG-TO247-3
Infineon Technologies
106
In Stock
1 : ¥119.12000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
33A (Tc)
15V
104mOhm @ 13A, 15V
5.7V @ 5.6mA
28 nC @ 15 V
+20V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
PG-TO247-3-41
TO-247-3
CoolSiC_MOSFET
IMBG120R045M1HXTMA1
SICFET N-CH 1.2KV 47A TO263
Infineon Technologies
1,017
In Stock
1 : ¥136.28000
Cut Tape (CT)
1,000 : ¥86.31218
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
47A (Tc)
-
63mOhm @ 16A, 18V
5.7V @ 7.5mA
46 nC @ 18 V
+18V, -15V
1527 pF @ 800 V
-
227W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
1,147
In Stock
1 : ¥144.07000
Cut Tape (CT)
1,000 : ¥91.25158
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
48A
-
-
-
-
-
-
-
-
-55°C ~ 175°C
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
CoolSiC_MOSFET
IMBG120R030M1HXTMA1
SICFET N-CH 1.2KV 56A TO263
Infineon Technologies
725
In Stock
1 : ¥167.72000
Cut Tape (CT)
1,000 : ¥109.49521
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
56A (Tc)
-
41mOhm @ 25A, 18V
5.7V @ 11.5mA
63 nC @ 18 V
+18V, -15V
2290 pF @ 800 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
196
In Stock
1 : ¥205.81000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
98A (Tc)
15V, 18V
26.9mOhm @ 41A, 18V
5.2V @ 17.6mA
109 nC @ 18 V
+20V, -5V
3460 pF @ 800 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
279
In Stock
1 : ¥277.89000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
2000 V
34A (Tc)
15V, 18V
98mOhm @ 13A, 18V
5.5V @ 7.7mA
64 nC @ 18 V
+20V, -7V
-
-
267W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
TO-247-3 AC EP
AIMW120R035M1HXKSA1
1200V COOLSIC MOSFET PG-TO247-3
Infineon Technologies
172
In Stock
1 : ¥290.45000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
52A (Tc)
18V
46mOhm @ 25A, 18V
5.7V @ 10mA
59 nC @ 18 V
+23V, -7V
2130 pF @ 800 V
-
228W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
PG-TO247-3-41
TO-247-3
224
In Stock
1 : ¥298.25000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
127A (Tc)
15V, 18V
18.4mOhm @ 54.3A, 18V
5.2V @ 23.4mA
145 nC @ 18 V
+20V, -5V
4580 pF @ 800 V
-
455W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
939
In Stock
1 : ¥312.61000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
127A (Tc)
15V, 18V
18.4mOhm @ 54.3A, 18V
5.2V @ 23.4mA
145 nC @ 18 V
+20V, -5V
4580 pF @ 25 V
-
455W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
179
In Stock
1 : ¥364.74000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
2000 V
48A (Tc)
15V, 18V
64mOhm @ 20A, 18V
5.5V @ 12.1mA
82 nC @ 18 V
+20V, -7V
-
-
348W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
1,222
In Stock
1 : ¥420.07000
Cut Tape (CT)
1,000 : ¥291.01053
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
187A
-
-
-
-
-
-
-
-
-55°C ~ 175°C
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
228
In Stock
1 : ¥534.43000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
2000 V
89A (Tc)
15V, 18V
33mOhm @ 40A, 18V
5.5V @ 24mA
137 nC @ 18 V
+20V, -7V
-
-
576W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
254
In Stock
1 : ¥538.62000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
225A (Tc)
15V, 18V
9.9mOhm @ 108A, 18V
5.2V @ 47mA
289 nC @ 18 V
+20V, -5V
9170 pF @ 800 V
-
750W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
182
In Stock
1 : ¥996.45000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
2000 V
123A (Tc)
15V, 18V
16.5mOhm @ 60A, 18V
5.5V @ 48mA
246 nC @ 18 V
+20V, -7V
-
-
552W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
CoolSiC Series
IMZ120R220M1HXKSA1
SICFET N-CH 1.2KV 13A TO247-4
Infineon Technologies
345
In Stock
1 : ¥44.82000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
13A (Tc)
15V, 18V
220mOhm @ 4A, 18V
5.7V @ 1.6mA
8.5 nC @ 18 V
+23V, -7V
289 pF @ 800 V
-
75W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
TO-247-3 AC EP
IMW120R350M1HXKSA1
SICFET N-CH 1.2KV 4.7A TO247-3
Infineon Technologies
1,365
In Stock
1 : ¥50.41000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
4.7A (Tc)
15V, 18V
455mOhm @ 2A, 18V
5.7V @ 1mA
5.3 nC @ 18 V
+23V, -7V
182 pF @ 800 V
-
60W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-3 AC EP
IMW120R220M1HXKSA1
SICFET N-CH 1.2KV 13A TO247-3
Infineon Technologies
1,263
In Stock
1 : ¥54.59000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
13A (Tc)
15V, 18V
286mOhm @ 4A, 18V
5.7V @ 1.6mA
8.5 nC @ 18 V
+23V, -7V
289 pF @ 800 V
-
75W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-3 AC EP
IMW65R107M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
633
In Stock
1 : ¥65.35000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
20A (Tc)
18V
142mOhm @ 8.9A, 18V
5.7V @ 3mA
15 nC @ 18 V
+23V, -5V
496 pF @ 400 V
-
75W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
CoolSiC_MOSFET
IMBG120R140M1HXTMA1
SICFET N-CH 1.2KV 18A TO263
Infineon Technologies
1,231
In Stock
1 : ¥66.33000
Cut Tape (CT)
1,000 : ¥37.64807
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
18A (Tc)
-
189mOhm @ 6A, 18V
5.7V @ 2.5mA
13.4 nC @ 18 V
+18V, -15V
491 pF @ 800 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
of 104

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.