Single FETs, MOSFETs

Results: 19
Manufacturer
Infineon TechnologiesNexperia USA Inc.STMicroelectronicsVishay Siliconix
Series
-DeepGATE™, STripFET™ VIIHEXFET®HEXFET®, StrongIRFET™OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
55 V60 V75 V100 V150 V200 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)1.1A (Tc)18A (Tc)21A (Tc)23A (Tc)40A (Tc)42A (Tc)49A (Tc)50A (Tc)74A (Tc)80A (Tc)88A (Tc)104A (Tc)110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V8V, 10V10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 115A, 10V4.2mOhm @ 55A, 10V4.3mOhm @ 110A, 10V7.2mOhm @ 80A, 10V8mOhm @ 62A, 10V9mOhm @ 46A, 10V9.7mOhm @ 81A, 10V10mOhm @ 58A, 10V11mOhm @ 62A, 10V15mOhm @ 17A, 10V17.5mOhm @ 25A, 10V20mOhm @ 38A, 10V20mOhm @ 42A, 10V52mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
1V @ 1mA (Min)2.5V @ 250µA3V @ 250µA3.5V @ 90µA4V @ 100µA4V @ 150µA4V @ 250µA4V @ 35µA4.5V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3 nC @ 10 V8.7 nC @ 10 V12 nC @ 10 V63 nC @ 10 V67 nC @ 10 V68 nC @ 10 V84 nC @ 10 V110 nC @ 10 V117 nC @ 10 V120 nC @ 10 V130 nC @ 4.5 V146 nC @ 10 V165 nC @ 10 V180 nC @ 10 V
Vgs (Max)
±16V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
70 pF @ 48 V200 pF @ 25 V890 pF @ 75 V1160 pF @ 25 V1450 pF @ 25 V1470 pF @ 25 V2700 pF @ 25 V3070 pF @ 50 V3247 pF @ 25 V3400 pF @ 25 V3500 pF @ 25 V4910 pF @ 50 V4950 pF @ 25 V5150 pF @ 50 V
Power Dissipation (Max)
417mW (Ta)2W (Ta), 3.1W (Tc)3W (Ta), 136W (Tc)3.1W (Ta), 110W (Tc)57W (Tc)94W (Tc)140W (Tc)150W (Tc)170W (Tc)200W (Tc)250W (Tc)370W (Tc)380W (Tc)441W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
D2PAKPG-TO220-3PG-TSDSON-8SOT-223TO-220TO-220ABTO-236ABTO-247ACTO-252AA
Package / Case
8-PowerTDFNTO-220-3TO-236-3, SC-59, SOT-23-3TO-247-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRF640NPBF
MOSFET N-CH 200V 18A TO220AB
Infineon Technologies
53,618
In Stock
1 : ¥6.81000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
200 V
18A (Tc)
10V
150mOhm @ 11A, 10V
4V @ 250µA
67 nC @ 10 V
±20V
1160 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
SOT223-3L
IRFL9110TRPBF
MOSFET P-CH 100V 1.1A SOT223
Vishay Siliconix
55,212
In Stock
1 : ¥6.98000
Cut Tape (CT)
2,500 : ¥2.87605
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
1.1A (Tc)
10V
1.2Ohm @ 660mA, 10V
4V @ 250µA
8.7 nC @ 10 V
±20V
200 pF @ 25 V
-
2W (Ta), 3.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
TO-220AB PKG
IRFZ44NPBF
MOSFET N-CH 55V 49A TO220AB
Infineon Technologies
12,632
In Stock
1 : ¥10.67000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
55 V
49A (Tc)
10V
17.5mOhm @ 25A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1470 pF @ 25 V
-
94W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRF3205PBF
MOSFET N-CH 55V 110A TO220AB
Infineon Technologies
22,123
In Stock
1 : ¥13.14000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
55 V
110A (Tc)
10V
8mOhm @ 62A, 10V
4V @ 250µA
146 nC @ 10 V
±20V
3247 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
8-Power TDFN
BSZ520N15NS3GATMA1
MOSFET N-CH 150V 21A 8TSDSON
Infineon Technologies
15,338
In Stock
1 : ¥13.30000
Cut Tape (CT)
5,000 : ¥5.24534
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
21A (Tc)
8V, 10V
52mOhm @ 18A, 10V
4V @ 35µA
12 nC @ 10 V
±20V
890 pF @ 75 V
-
57W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9540NSTRLPBF
MOSFET P-CH 100V 23A D2PAK
Infineon Technologies
2,346
In Stock
1 : ¥15.68000
Cut Tape (CT)
800 : ¥8.76179
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
23A (Tc)
10V
117mOhm @ 14A, 10V
4V @ 250µA
110 nC @ 10 V
±20V
1450 pF @ 25 V
-
3.1W (Ta), 110W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220AB PKG
IRF4905PBF
MOSFET P-CH 55V 74A TO220AB
Infineon Technologies
43,717
In Stock
1 : ¥18.47000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
55 V
74A (Tc)
10V
20mOhm @ 38A, 10V
4V @ 250µA
180 nC @ 10 V
±20V
3400 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRF5210PBF
MOSFET P-CH 100V 40A TO220AB
Infineon Technologies
4,396
In Stock
1 : ¥19.79000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
40A (Tc)
10V
60mOhm @ 24A, 10V
4V @ 250µA
180 nC @ 10 V
±20V
2700 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-252
SUD50P06-15L-E3
MOSFET P-CH 60V 50A TO252
Vishay Siliconix
29,780
In Stock
1 : ¥21.02000
Cut Tape (CT)
2,000 : ¥9.48438
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
15mOhm @ 17A, 10V
3V @ 250µA
165 nC @ 10 V
±20V
4950 pF @ 25 V
-
3W (Ta), 136W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220AB PKG
IRFB4115PBF
MOSFET N-CH 150V 104A TO220AB
Infineon Technologies
11,050
In Stock
1 : ¥21.43000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
104A (Tc)
10V
11mOhm @ 62A, 10V
5V @ 250µA
120 nC @ 10 V
±20V
5270 pF @ 50 V
-
380W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF4905STRLPBF
MOSFET P-CH 55V 42A D2PAK
Infineon Technologies
7,444
In Stock
1 : ¥22.25000
Cut Tape (CT)
800 : ¥12.42853
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
55 V
42A (Tc)
10V
20mOhm @ 42A, 10V
4V @ 250µA
180 nC @ 10 V
±20V
3500 pF @ 25 V
-
170W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-247-3 AC EP
IRFP4668PBF
MOSFET N-CH 200V 130A TO247AC
Infineon Technologies
11,824
In Stock
1 : ¥67.65000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
130A (Tc)
10V
9.7mOhm @ 81A, 10V
5V @ 250µA
241 nC @ 10 V
±30V
10720 pF @ 50 V
-
520W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
TO-236AB
BSH201,215
MOSFET P-CH 60V 300MA TO236AB
Nexperia USA Inc.
19,388
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.92005
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
60 V
300mA (Ta)
4.5V, 10V
2.5Ohm @ 160mA, 10V
1V @ 1mA (Min)
3 nC @ 10 V
±20V
70 pF @ 48 V
-
417mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TO-220AB PKG
IRFB3607PBF
MOSFET N-CH 75V 80A TO220AB
Infineon Technologies
3,303
In Stock
1 : ¥6.90000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
75 V
80A (Tc)
10V
9mOhm @ 46A, 10V
4V @ 100µA
84 nC @ 10 V
±20V
3070 pF @ 50 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220-3
STP150N10F7
MOSFET N-CH 100V 110A TO220
STMicroelectronics
476
In Stock
1 : ¥23.07000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
110A (Tc)
10V
4.2mOhm @ 55A, 10V
4.5V @ 250µA
117 nC @ 10 V
±20V
8115 pF @ 50 V
-
250W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220AB PKG
IRFB4410PBF
MOSFET N-CH 100V 88A TO220AB
Infineon Technologies
7,691
In Stock
1 : ¥23.81000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
88A (Tc)
10V
10mOhm @ 58A, 10V
4V @ 150µA
180 nC @ 10 V
±20V
5150 pF @ 50 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRF100B201
MOSFET N-CH 100V 192A TO220AB
Infineon Technologies
2,472
In Stock
1 : ¥29.47000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
192A (Tc)
10V
4.2mOhm @ 115A, 10V
4V @ 250µA
255 nC @ 10 V
±20V
9500 pF @ 50 V
-
441W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRLB4030PBF
MOSFET N-CH 100V 180A TO220AB
Infineon Technologies
13,559
In Stock
1 : ¥35.71000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
4.5V, 10V
4.3mOhm @ 110A, 10V
2.5V @ 250µA
130 nC @ 4.5 V
±16V
11360 pF @ 50 V
-
370W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220-3
IPP072N10N3GXKSA1
MOSFET N-CH 100V 80A TO220-3
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥17.82000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
80A (Tc)
6V, 10V
7.2mOhm @ 80A, 10V
3.5V @ 90µA
68 nC @ 10 V
±20V
4910 pF @ 50 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.