Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesSTMicroelectronicsToshiba Semiconductor and Storage
Series
CoolMOS™ P7HEXFET®SuperMESH3™U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V600 V950 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)4A (Tc)48A (Tc)56A (Tc)97A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V10V
Rds On (Max) @ Id, Vgs
9mOhm @ 58A, 10V13.9mOhm @ 38A, 10V60mOhm @ 15.9A, 10V300mOhm @ 1A, 10V3.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA4V @ 100µA4V @ 150µA4V @ 800µA5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V19 nC @ 10 V67 nC @ 10 V81 nC @ 10 V120 nC @ 10 V
Vgs (Max)
+10V, -20V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 10 V460 pF @ 25 V2895 pF @ 400 V3031 pF @ 50 V4820 pF @ 50 V
Power Dissipation (Max)
1W (Ta)90W (Tc)143W (Tc)164W (Tc)230W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
DPAKIPAK (TO-251AA)PG-TO247-3SOT-23FTO-220AB
Package / Case
SOT-23-3 Flat LeadsTO-220-3TO-247-3TO-251-3 Short Leads, IPAK, TO-251AATO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
264,450
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.69123
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
2A (Ta)
4V, 10V
300mOhm @ 1A, 10V
2V @ 1mA
8.3 nC @ 10 V
+10V, -20V
330 pF @ 10 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
PG-TO247-3
IPW60R060P7XKSA1
MOSFET N-CH 600V 48A TO247-3
Infineon Technologies
213
In Stock
1 : ¥50.49000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
48A (Tc)
10V
60mOhm @ 15.9A, 10V
4V @ 800µA
67 nC @ 10 V
±20V
2895 pF @ 400 V
-
164W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
TO-220AB PKG
IRFB4410ZPBF
MOSFET N-CH 100V 97A TO220AB
Infineon Technologies
7,744
In Stock
1 : ¥16.01000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
97A (Tc)
10V
9mOhm @ 58A, 10V
4V @ 150µA
120 nC @ 10 V
±20V
4820 pF @ 50 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPAK (TO-251)
IRFU4510PBF
MOSFET N-CH 100V 56A IPAK
Infineon Technologies
1,310
In Stock
1 : ¥15.11000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
56A (Tc)
10V
13.9mOhm @ 38A, 10V
4V @ 100µA
81 nC @ 10 V
±20V
3031 pF @ 50 V
-
143W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251AA)
TO-251-3 Short Leads, IPAK, TO-251AA
MFG_DPAK(TO252-3)
STD5N95K3
MOSFET N-CH 950V 4A DPAK
STMicroelectronics
2,485
In Stock
1 : ¥24.38000
Cut Tape (CT)
2,500 : ¥10.97800
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
950 V
4A (Tc)
10V
3.5Ohm @ 2A, 10V
5V @ 100µA
19 nC @ 10 V
±30V
460 pF @ 25 V
-
90W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.