Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesonsemiVishay Siliconix
Series
-HEXFET®PowerTrench®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V150 V
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta)6.7A (Ta), 20A (Tc)8A (Tc)10A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
19.2mOhm @ 7A, 10V25mOhm @ 6.7A, 10V25mOhm @ 7A, 10V31mOhm @ 34A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA4V @ 250µA5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V36 nC @ 10 V50 nC @ 10 V69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
560 pF @ 24 V2300 pF @ 50 V2330 pF @ 75 V2580 pF @ 15 V
Power Dissipation (Max)
500mW (Ta)2W (Ta), 4.2W (Tc)2.5W (Ta), 96W (Tc)3.6W (Ta), 156W (Tc)
Supplier Device Package
6-TSOP8-PQFN (5x6)
Package / Case
8-PowerTDFNSOT-23-6 Thin, TSOT-23-6
Stocking Options
Environmental Options
Media
Marketplace Product
4Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-PQFN
FDMS86250
MOSFET N-CH 150V 6.7A/20A 8PQFN
onsemi
14,777
In Stock
1 : ¥20.94000
Cut Tape (CT)
3,000 : ¥9.45126
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
6.7A (Ta), 20A (Tc)
6V, 10V
25mOhm @ 6.7A, 10V
4V @ 250µA
36 nC @ 10 V
±20V
2330 pF @ 75 V
-
2.5W (Ta), 96W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
Pkg 5540
SI3421DV-T1-GE3
MOSFET P-CH 30V 8A 6TSOP
Vishay Siliconix
19,582
In Stock
1 : ¥4.10000
Cut Tape (CT)
3,000 : ¥1.37105
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
8A (Tc)
4.5V, 10V
19.2mOhm @ 7A, 10V
3V @ 250µA
69 nC @ 10 V
±20V
2580 pF @ 15 V
-
2W (Ta), 4.2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
8-Power TDFN
IRFH5015TRPBF
MOSFET N-CH 150V 10A/56A 8PQFN
Infineon Technologies
8,272
In Stock
1 : ¥14.86000
Cut Tape (CT)
4,000 : ¥6.68536
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
10A (Ta), 56A (Tc)
10V
31mOhm @ 34A, 10V
5V @ 150µA
50 nC @ 10 V
±20V
2300 pF @ 50 V
-
3.6W (Ta), 156W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
NTGS4141NT1G
NTGS4141NT1G
MOSFET N-CH 30V 3.5A 6TSOP
onsemi
9,859
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.28545
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.5A (Ta)
4.5V, 10V
25mOhm @ 7A, 10V
3V @ 250µA
12 nC @ 10 V
±20V
560 pF @ 24 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
Showing
of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.