FET, MOSFET Arrays

Results: 5
Manufacturer
Diodes IncorporatedNexperia USA Inc.Rohm SemiconductorToshiba Semiconductor and Storage
Series
-TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Feature
-Logic Level Gate
Current - Continuous Drain (Id) @ 25°C
100mA400mA680mA (Ta)
Rds On (Max) @ Id, Vgs
1.2Ohm @ 100mA, 4V1.4Ohm @ 350mA, 4.5V4Ohm @ 10mA, 4V8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
1.1V @ 250µA1.2V @ 250µA1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
0.62nC @ 4.5V0.68nC @ 4.5V-
Input Capacitance (Ciss) (Max) @ Vds
8.5pF @ 3V13pF @ 5V13.5pF @ 3V44.8pF @ 15V50pF @ 15V
Power - Max
150mW480mW (Ta)500mW
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
EMT6ES6SOT-563SOT-666
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
77,817
In Stock
1 : ¥3.28000
Cut Tape (CT)
4,000 : ¥0.59157
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
30V
100mA
4Ohm @ 10mA, 4V
1.5V @ 100µA
-
8.5pF @ 3V
150mW
150°C (TJ)
-
-
Surface Mount
SOT-563, SOT-666
ES6
SOT 563
DMN32D0LV-7
MOSFET 2N-CH 30V 0.68A SOT563
Diodes Incorporated
4,500
In Stock
333,000
Factory
1 : ¥2.46000
Cut Tape (CT)
3,000 : ¥0.41780
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
30V
680mA (Ta)
1.2Ohm @ 100mA, 4V
1.2V @ 250µA
0.62nC @ 4.5V
44.8pF @ 15V
480mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-563, SOT-666
SOT-563
EMT6_EMT6 PKg
EM6K1T2R
MOSFET 2N-CH 30V 0.1A EMT6
Rohm Semiconductor
10,144
In Stock
1 : ¥3.78000
Cut Tape (CT)
8,000 : ¥1.19563
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
30V
100mA
8Ohm @ 10mA, 4V
1.5V @ 100µA
-
13pF @ 5V
150mW
150°C (TJ)
-
-
Surface Mount
SOT-563, SOT-666
EMT6
SOT666
NX3008NBKV,115
MOSFET 2N-CH 30V 400MA SOT666
Nexperia USA Inc.
31,202
In Stock
1 : ¥3.28000
Cut Tape (CT)
4,000 : ¥0.72725
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
30V
400mA
1.4Ohm @ 350mA, 4.5V
1.1V @ 250µA
0.68nC @ 4.5V
50pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-563, SOT-666
SOT-666
2,155
In Stock
1 : ¥2.87000
Cut Tape (CT)
4,000 : ¥0.51372
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
30V
100mA
4Ohm @ 10mA, 4V
1.5V @ 100µA
-
13.5pF @ 3V
150mW
150°C (TJ)
-
-
Surface Mount
SOT-563, SOT-666
ES6
Showing
of 5

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.