Single FETs, MOSFETs

Results: 11,353
Manufacturer
Alpha & Omega Semiconductor Inc.ANBON SEMICONDUCTOR (INT'L) LIMITEDCentral Semiconductor CorpComchip TechnologyDiodes IncorporatedDiotec SemiconductorEVVOGeneSiC SemiconductorGoford SemiconductorGood-Ark SemiconductorHoneywell AerospaceInfineon Technologies
Series
-*AlphaMOSAlphaSGT2™AlphaSGT™aMOS5™aMOS™Automotive, AEC-Q101Automotive, AEC-Q101, UltraFET™C2M™C3M™Cool MOS™
Packaging
BagBoxBulkCut Tape (CT)Digi-Reel®StripTape & Box (TB)Tape & Reel (TR)TrayTube
Product Status
ActiveDiscontinued at Digi-KeyLast Time BuyNot For New DesignsObsolete
FET Type
-N-ChannelP-Channel
Technology
-GaNFET (Cascode Gallium Nitride FET)GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
10 V12 V16 V16.5 V20 V24 V25 V28 V30 V33 V34 V35 V
Current - Continuous Drain (Id) @ 25°C
10mA (Ta)30mA (Tj)45mA (Ta)50mA50mA (Ta)50mA (Tj)54mA (Tj)70mA (Ta)86mA (Tj)90mA (Ta)100mA (Ta)100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V0V, 10V1.5V, 4V1.8V, 4.5V2V, 2.8V2V, 5V2.4V, 10V2.5V, 10V2.5V, 4.5V2.5V, 4V2.6V, 10V2.6V, 5V
Rds On (Max) @ Id, Vgs
1.15mOhm @ 100A, 10V1.25mOhm @ 100A, 10V1.28mOhm @ 100A, 10V1.3mOhm @ 100A, 10V1.3mOhm @ 195A, 10V1.3mOhm @ 25A, 10V1.4mOhm @ 100A, 10V1.4mOhm @ 25A, 10V1.47mOhm @ 90A, 10V1.5mOhm @ 100A, 10V1.5mOhm @ 195A, 10V1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
450mV @ 2mA (Min)700mV @ 250µA (Min)900mV @ 250µA1V @ 1mA1V @ 250µA1V @ 250µA (Min)1.2V @ 250µA1.3V @ 100µA1.4V @ 1mA1.5V @ 1mA1.5V @ 1µA1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.4 nC @ 4.5 V1 nC @ 5 V1.1 nC @ 10 V1.4 nC @ 10 V1.43 nC @ 10 V1.5 nC @ 10 V1.57 nC @ 10 V1.8 nC @ 5 V2 nC @ 5 V2 nC @ 10 V2.63 nC @ 10 V3 nC @ 10 V
Vgs (Max)
-8V, +19V-6.5V+5V, -16V±8V+10V, -8V±10V10V±12V+15V, -4V+15V, -5V±15V15V, 12V
Input Capacitance (Ciss) (Max) @ Vds
3.5 pF @ 15 V6.5 pF @ 25 V6.6 pF @ 10 V7.4 pF @ 10 V10 pF @ 25 V25 pF @ 25 V35 pF @ 18 V40 pF @ 10 V40 pF @ 25 V43 pF @ 25 V45 pF @ 10 V45 pF @ 25 V
FET Feature
-Current SensingDepletion ModeTemperature Sensing Diode
Power Dissipation (Max)
250mW (Ta)250mW (Tc)300mW (Ta)300mW (Tc)350mW (Ta)350mW (Tc)360mW (Tc)375mW375mW (Ta)400mW (Ta)400mW (Ta), 1W (Tc)500mW (Ta)
Operating Temperature
-65°C ~ 150°C (TJ)-65°C ~ 175°C (TJ)-60°C ~ 175°C (TJ)-55°C ~ 125°C (TJ)-55°C ~ 135°C (TJ)-55°C ~ 150°C-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)-55°C ~ 155°C (TJ)-55°C ~ 175°C-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)
Grade
-AutomotiveMilitary
Qualification
-AEC-Q101MIL-PRF-19500/542MIL-PRF-19500/543MIL-PRF-19500/555MIL-PRF-19500/556MIL-PRF-19500/562MIL-PRF-19500/564MIL-PRF-19500/570MIL-PRF-19500/592MIL-PRF-19500/595MIL-PRF-19500/603MIL-PRF-19500/614MIL-PRF-19500/630
Supplier Device Package
3-SPA4-HVMDIP4-Power Tab8-CDIP-EP264 MAX™ [L2]-DO-35DPAK3 (IPAK)E-Line (TO-92 compatible)HiP247™HiP247™ Long LeadsI2PAK
Package / Case
3-SIP4-DIP (0.300", 7.62mm)4-SIP8-CDIP Exposed Pad-DO-204AH, DO-35, AxialE-Line-3E-Line-3, Formed Leadsi4-Pac™-5i4-Pac™-5 (3 Leads)ISOPLUS220™ISOPLUSi5-PAK™
Stocking Options
Environmental Options
Media
Marketplace Product
11,353Results
Applied FiltersRemove All
Showing
of 11,353
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-92-3(StandardBody),TO-226_straightlead
2N7000
MOSFET TO92 N 60V 0.2A 5OHM 150C
onsemi
12,298
In Stock
1 : ¥4.02000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200mA (Ta)
4.5V, 10V
5Ohm @ 500mA, 10V
3V @ 1mA
-
±20V
50 pF @ 25 V
-
400mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
VN2222LL-G
MOSFET N-CH 60V 230MA TO92-3
Microchip Technology
6,063
In Stock
1 : ¥4.43000
Bag
-
Bag
Active
N-Channel
MOSFET (Metal Oxide)
60 V
230mA (Tj)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 1mA
-
±30V
60 pF @ 25 V
-
400mW (Ta), 1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
LND150N3-G
MOSFET N-CH 500V 30MA TO92-3
Microchip Technology
7,082
In Stock
1 : ¥4.93000
Bag
-
Bag
Active
N-Channel
MOSFET (Metal Oxide)
500 V
30mA (Tj)
0V
1000Ohm @ 500µA, 0V
-
-
±20V
10 pF @ 25 V
Depletion Mode
740mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-220AB PKG
IRF640NPBF
MOSFET N-CH 200V 18A TO220AB
Infineon Technologies
53,543
In Stock
1 : ¥6.81000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
200 V
18A (Tc)
10V
150mOhm @ 11A, 10V
4V @ 250µA
67 nC @ 10 V
±20V
1160 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
IPAK (TO-251)
IRLU024NPBF
MOSFET N-CH 55V 17A IPAK
Infineon Technologies
5,420
In Stock
1 : ¥6.98000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
55 V
17A (Tc)
4V, 10V
65mOhm @ 10A, 10V
2V @ 250µA
15 nC @ 5 V
±16V
480 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
IPAK (TO-251AA)
TO-251-3 Short Leads, IPAK, TO-251AA
TO-220AB PKG
IRF530NPBF
MOSFET N-CH 100V 17A TO220AB
Infineon Technologies
39,892
In Stock
1 : ¥7.47000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
17A (Tc)
10V
90mOhm @ 9A, 10V
4V @ 250µA
37 nC @ 10 V
±20V
920 pF @ 25 V
-
70W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRF9530NPBF
MOSFET P-CH 100V 14A TO220AB
Infineon Technologies
33,264
In Stock
1 : ¥7.64000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
14A (Tc)
10V
200mOhm @ 8.4A, 10V
4V @ 250µA
58 nC @ 10 V
±20V
760 pF @ 25 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRF540NPBF
MOSFET N-CH 100V 33A TO220AB
Infineon Technologies
139,095
In Stock
1 : ¥7.72000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
10V
44mOhm @ 16A, 10V
4V @ 250µA
71 nC @ 10 V
±20V
1960 pF @ 25 V
-
130W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRFB7545PBF
MOSFET N-CH 60V 95A TO220
Infineon Technologies
48,102
In Stock
1 : ¥7.88000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
95A (Tc)
6V, 10V
5.9mOhm @ 57A, 10V
3.7V @ 100µA
110 nC @ 10 V
±20V
4010 pF @ 25 V
-
125W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220
TO-220-3
IPAK (TO-251)
IRFU5305PBF
MOSFET P-CH 55V 31A IPAK
Infineon Technologies
14,711
In Stock
1 : ¥8.70000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
55 V
31A (Tc)
10V
65mOhm @ 16A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1200 pF @ 25 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
IPAK (TO-251AA)
TO-251-3 Short Leads, IPAK, TO-251AA
TO-92
ZVN4424A
MOSFET N-CH 240V 260MA TO92-3
Diodes Incorporated
4,046
In Stock
32,000
Factory
1 : ¥9.20000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
240 V
260mA (Ta)
2.5V, 10V
5.5Ohm @ 500mA, 10V
1.8V @ 1mA
-
±40V
200 pF @ 25 V
-
750mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92
TO-226-3, TO-92-3 (TO-226AA)
TO-220AB PKG
IRLZ44NPBF
MOSFET N-CH 55V 47A TO220AB
Infineon Technologies
12,908
In Stock
1 : ¥10.51000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
55 V
47A (Tc)
4V, 10V
22mOhm @ 25A, 10V
2V @ 250µA
48 nC @ 5 V
±16V
1700 pF @ 25 V
-
3.8W (Ta), 110W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRFZ44NPBF
MOSFET N-CH 55V 49A TO220AB
Infineon Technologies
12,498
In Stock
1 : ¥10.67000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
55 V
49A (Tc)
10V
17.5mOhm @ 25A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1470 pF @ 25 V
-
94W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB
IRF530PBF
MOSFET N-CH 100V 14A TO220AB
Vishay Siliconix
8,692
In Stock
1 : ¥11.08000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
14A (Tc)
10V
160mOhm @ 8.4A, 10V
4V @ 250µA
26 nC @ 10 V
±20V
670 pF @ 25 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRL540NPBF
MOSFET N-CH 100V 36A TO220AB
Infineon Technologies
18,742
In Stock
1 : ¥11.25000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
36A (Tc)
4V, 10V
44mOhm @ 18A, 10V
2V @ 250µA
74 nC @ 5 V
±16V
1800 pF @ 25 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRF5305PBF
MOSFET P-CH 55V 31A TO220AB
Infineon Technologies
38,957
In Stock
1 : ¥11.33000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
55 V
31A (Tc)
10V
60mOhm @ 16A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1200 pF @ 25 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB
IRF9640PBF
MOSFET P-CH 200V 11A TO220AB
Vishay Siliconix
26,322
In Stock
1 : ¥11.33000
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
200 V
11A (Tc)
10V
500mOhm @ 6.6A, 10V
4V @ 250µA
44 nC @ 10 V
±20V
1200 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
IRF9540NPBF
IRF9540NPBF
MOSFET P-CH 100V 23A TO220AB
Infineon Technologies
5,077
In Stock
1 : ¥11.41000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
23A (Tc)
10V
117mOhm @ 11A, 10V
4V @ 250µA
97 nC @ 10 V
±20V
1300 pF @ 25 V
-
140W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB
IRF540PBF
MOSFET N-CH 100V 28A TO220AB
Vishay Siliconix
33,390
In Stock
1 : ¥11.90000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
28A (Tc)
10V
77mOhm @ 17A, 10V
4V @ 250µA
72 nC @ 10 V
±20V
1700 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB
IRF830PBF
MOSFET N-CH 500V 4.5A TO220AB
Vishay Siliconix
6,458
In Stock
1 : ¥12.48000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
4.5A (Tc)
10V
1.5Ohm @ 2.7A, 10V
4V @ 250µA
38 nC @ 10 V
±20V
610 pF @ 25 V
-
74W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRF3205PBF
MOSFET N-CH 55V 110A TO220AB
Infineon Technologies
22,070
In Stock
1 : ¥13.14000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
55 V
110A (Tc)
10V
8mOhm @ 62A, 10V
4V @ 250µA
146 nC @ 10 V
±20V
3247 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRF3710PBF
MOSFET N-CH 100V 57A TO220AB
Infineon Technologies
6,596
In Stock
1 : ¥13.38000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
57A (Tc)
10V
23mOhm @ 28A, 10V
4V @ 250µA
130 nC @ 10 V
±20V
3130 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
IPAK (TO-251)
IRLU8743PBF
MOSFET N-CH 30V 160A IPAK
Infineon Technologies
3,473
In Stock
1 : ¥13.46000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
30 V
160A (Tc)
4.5V, 10V
3.1mOhm @ 25A, 10V
2.35V @ 100µA
59 nC @ 4.5 V
±20V
4880 pF @ 15 V
-
135W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
IPAK (TO-251AA)
TO-251-3 Short Leads, IPAK, TO-251AA
TO-220AB
IRF9530PBF
MOSFET P-CH 100V 12A TO220AB
Vishay Siliconix
12,968
In Stock
1 : ¥14.29000
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
12A (Tc)
10V
300mOhm @ 7.2A, 10V
4V @ 250µA
38 nC @ 10 V
±20V
860 pF @ 25 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
IPAK (TO-251)
IRFU4615PBF
MOSFET N-CH 150V 33A IPAK
Infineon Technologies
6,433
In Stock
1 : ¥15.11000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
33A (Tc)
10V
42mOhm @ 21A, 10V
5V @ 100µA
26 nC @ 10 V
±20V
1750 pF @ 50 V
-
144W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
IPAK (TO-251AA)
TO-251-3 Short Leads, IPAK, TO-251AA
Showing
of 11,353

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.