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SCTW100N65G2AG is out of stock and can be placed on backorder.
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SCTW100N65G2AG | |
|---|---|
DigiKey Part Number | 497-SCTW100N65G2AG-ND |
Manufacturer | |
Manufacturer Product Number | SCTW100N65G2AG |
Description | SICFET N-CH 650V 100A HIP247 |
Manufacturer Standard Lead Time | 41 Weeks |
Customer Reference | |
Detailed Description | N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™ |
Datasheet | Datasheet |
EDA/CAD Models | SCTW100N65G2AG Models |
Product Attributes
Type | Description | Select All |
|---|---|---|
Category | ||
Mfr | ||
Series | - | |
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 18V | |
Rds On (Max) @ Id, Vgs | 26mOhm @ 50A, 18V | |
Vgs(th) (Max) @ Id | 5V @ 5mA | |
Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 18 V | |
Vgs (Max) | +22V, -10V | |
Input Capacitance (Ciss) (Max) @ Vds | 3315 pF @ 520 V | |
FET Feature | - | |
Power Dissipation (Max) | 420W (Tc) | |
Operating Temperature | -55°C ~ 200°C (TJ) | |
Grade | Automotive | |
Qualification | AEC-Q101 | |
Mounting Type | Through Hole | |
Supplier Device Package | HiP247™ | |
Package / Case | ||
Base Product Number |
Quantity
All prices are in CNY
Tube
| Quantity | Unit Price (Including 13% VAT) | Ext Price (Including 13% VAT) |
|---|---|---|
| 1 | ¥288.07000 | ¥288.07 |
| 30 | ¥238.79333 | ¥7,163.80 |
| 120 | ¥223.86892 | ¥26,864.27 |
Manufacturers Standard Package
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