Single Bipolar Transistors

Results: 12
Transistor Type
NPNNPN - DarlingtonPNPPNP - Darlington
Current - Collector (Ic) (Max)
15 A16 A30 A50 A
Voltage - Collector Emitter Breakdown (Max)
60 V120 V250 V
Vce Saturation (Max) @ Ib, Ic
3.4V @ 150mA, 15A3.5V @ 500mA, 50A4V @ 3.2A, 16A4V @ 300mA, 30A5V @ 7A, 15A
Current - Collector Cutoff (Max)
100µA500µA1mA2mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 4A, 2V15 @ 8A, 4V25 @ 8A, 5V400 @ 10A, 5V1000 @ 20A, 5V1000 @ 25A, 5V
Power - Max
115 W175 W200 W250 W300 W
Frequency - Transition
4MHz18MHz-
Operating Temperature
-65°C ~ 200°C (TJ)-55°C ~ 200°C (TJ)
Package / Case
TO-204AA, TO-3TO-204AE
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-3 Pkg
MJ21193G
TRANS PNP 250V 16A TO204
onsemi
413
In Stock
1 : ¥64.20000
Tray
-
Tray
Active
PNP
16 A
250 V
4V @ 3.2A, 16A
100µA
25 @ 8A, 5V
250 W
4MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204 (TO-3)
TO-3 Pkg
MJ21196G
TRANS NPN 250V 16A TO204
onsemi
730
In Stock
4,100
Factory
1 : ¥65.43000
Tray
-
Tray
Active
NPN
16 A
250 V
4V @ 3.2A, 16A
100µA
25 @ 8A, 5V
250 W
4MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204 (TO-3)
TO-3 Pkg
MJ11033G
TRANS PNP DARL 120V 50A TO204
onsemi
137
In Stock
1 : ¥101.14000
Tray
-
Tray
Active
PNP - Darlington
50 A
120 V
3.5V @ 500mA, 50A
2mA
1000 @ 25A, 5V
300 W
-
-55°C ~ 200°C (TJ)
Through Hole
TO-204AE
TO-204 (TO-3)
TO-3 Pkg
MJ15016G
TRANS PNP 120V 15A TO204
onsemi
213
In Stock
100
Factory
1 : ¥53.03000
Tray
-
Tray
Active
PNP
15 A
120 V
5V @ 7A, 15A
100µA
10 @ 4A, 2V
115 W
18MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204 (TO-3)
TO-3 Pkg
MJ15025G
TRANS PNP 250V 16A TO204
onsemi
192
In Stock
1 : ¥64.20000
Tray
-
Tray
Active
PNP
16 A
250 V
4V @ 3.2A, 16A
500µA
15 @ 8A, 4V
250 W
4MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204 (TO-3)
TO-3 Pkg
MJ11012G
TRANS NPN DARL 60V 30A TO204
onsemi
0
In Stock
Check Lead Time
1 : ¥69.37000
Tray
-
Tray
Active
NPN - Darlington
30 A
60 V
4V @ 300mA, 30A
1mA
1000 @ 20A, 5V
200 W
4MHz
-55°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204 (TO-3)
TO-3 Pkg
MJ11021G
TRANS PNP DARL 250V 15A TO204
onsemi
4
In Stock
1 : ¥80.45000
Tray
1 : ¥83.00000
Tray
-
Tray
Tray
Active
PNP - Darlington
15 A
250 V
3.4V @ 150mA, 15A
1mA
400 @ 10A, 5V
175 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204 (TO-3)
TO-3 Pkg
MJ11028G
TRANS NPN DARL 60V 50A TO204
onsemi
191
In Stock
1 : ¥158.44000
Tray
1 : ¥158.44000
Tray
-
Tray
Tray
Active
NPN - Darlington
50 A
60 V
3.5V @ 500mA, 50A
2mA
1000 @ 25A, 5V
300 W
-
-55°C ~ 200°C (TJ)
Through Hole
TO-204AE
TO-204 (TO-3)
TO-3 Pkg
MJ21194G
TRANS NPN 250V 16A TO204
onsemi
0
In Stock
Check Lead Time
1 : ¥64.20000
Tray
-
Tray
Active
NPN
16 A
250 V
4V @ 3.2A, 16A
100µA
25 @ 8A, 5V
250 W
4MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204 (TO-3)
TO-3 Pkg
MJ11032G
TRANS NPN DARL 120V 50A TO204
onsemi
0
In Stock
Check Lead Time
1 : ¥113.29000
Tray
-
Tray
Active
NPN - Darlington
50 A
120 V
3.5V @ 500mA, 50A
2mA
1000 @ 25A, 5V
300 W
-
-55°C ~ 200°C (TJ)
Through Hole
TO-204AE
TO-204 (TO-3)
TO-3 Pkg
MJ11016G
TRANS NPN DARL 120V 30A TO204
onsemi
0
In Stock
Check Lead Time
1 : ¥49.01000
Tray
-
Tray
Active
NPN - Darlington
30 A
120 V
4V @ 300mA, 30A
1mA
1000 @ 20A, 5V
200 W
4MHz
-55°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204 (TO-3)
TO-3 Pkg
MJ11022G
TRANS NPN DARL 250V 15A TO204
onsemi
2
In Stock
700
Factory
1 : ¥72.98000
Tray
-
Tray
Active
NPN - Darlington
15 A
250 V
3.4V @ 150mA, 15A
1mA
400 @ 10A, 5V
175 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204 (TO-3)
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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.