JFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Voltage - Breakdown (V(BR)GSS)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

2SK208-GR(TE85L,F) JFET N-CH 50V 6.5MA SC59 Toshiba Semiconductor and Storage	7,368 In Stock	1 : ¥3.82000 Cut Tape (CT) 3,000 : ¥1.04089 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	50 V	2.6 mA @ 10 V	6.5 mA	400 mV @ 100 nA	8.2pF @ 10V	100 mW	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59
2SK880GRTE85LF JFET N-CH 50V SC70 Toshiba Semiconductor and Storage	14,721 In Stock	1 : ¥4.63000 Cut Tape (CT) 3,000 : ¥1.55025 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	50 V	2.6 mA @ 10 V	-	1.5 V @ 100 nA	13pF @ 10V	100 mW	125°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70
MMBFJ201 JFET N-CH 40V SOT23-3 onsemi	0 In Stock Check Lead Time	1 : ¥3.50000 Cut Tape (CT) 3,000 : ¥0.93938 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	40 V	200 µA @ 20 V	-	300 mV @ 10 nA	-	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3

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JFETs

Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.