57A (Tc) Single FETs, MOSFETs

Results: 55
Manufacturer
Infineon TechnologiesIXYSMicro Commercial CoMicrochip TechnologyMicrosemi CorporationNexperia USA Inc.NXP USA Inc.onsemiSanken Electric USA Inc.SemiQVishay General Semiconductor - Diodes DivisionVishay SiliconixWolfspeed, Inc.
Series
-EHEXFET®PolarP™POWER MOS 7®POWER MOS 8™POWER MOS V®PowerTrench®QFET®SuperFET® VTrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyLast Time BuyNot For New DesignsObsolete
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
25 V30 V55 V60 V75 V80 V100 V150 V200 V250 V400 V500 V600 V800 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V6V, 10V10V15V18V20V
Rds On (Max) @ Id, Vgs
7.6mOhm @ 15A, 10V8.5mOhm @ 21A, 10V8.7mOhm @ 10A, 10V8.7mOhm @ 21A, 10V8.8mOhm @ 28.5A, 10V9.1mOhm @ 15A, 10V9.2mOhm @ 28.5A, 10V9.5mOhm @ 10A, 10V12mOhm @ 34A, 10V15mOhm @ 15A, 10V15mOhm @ 49A, 10V16mOhm @ 49A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA2.15V @ 1mA2.2V @ 1mA2.35V @ 25µA2.5V @ 650µA2.8V @ 1mA3.5V @ 250µA3.6V @ 8.77mA4V @ 10mA4V @ 110µA4V @ 1mA4V @ 2.5mA4V @ 250µA4.3V @ 6.7mA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V11.3 nC @ 10 V16.7 nC @ 10 V20 nC @ 6 V38.6 nC @ 10 V40 nC @ 10 V45 nC @ 10 V61.8 nC @ 10 V65 nC @ 10 V69 nC @ 10 V75 nC @ 18 V94 nC @ 15 V
Vgs (Max)
±10V±16V+19V, -8V±20V+22V, -10V+25V, -10V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
655 pF @ 15 V894 pF @ 15 V900 pF @ 13 V1690 pF @ 25 V1700 pF @ 800 V2000 pF @ 25 V2090 pF @ 50 V2500 pF @ 25 V2520 pF @ 25 V2527 pF @ 75 V2600 pF @ 25 V2650 pF @ 25 V
Power Dissipation (Max)
3.75W (Ta), 160W (Tc)3.75W (Ta), 300W (Tc)45W (Tc)48W (Tc)52W (Tc)54W (Tc)55W (Tc)68W (Tc)90W (Tc)92W (Tc)104W (Tj)110W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 175°C (TJ)150°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
8-PQFN (3.3x3.3)D2PAKD2PAK-7DFN5060DPAKIPAKISOPLUS247™ISOTOP®LFPAK33LFPAK56, Power-SO8PowerPAK® SO-8SOT-227
Package / Case
8-PowerTDFN8-PowerWDFNPowerPAK® SO-8SC-100, SOT-669SOT-1210, 8-LFPAK33 (5-Lead)SOT-227-4, miniBLOCTO-220-3TO-247-3TO-247-3 VariantTO-247-4TO-251-3 Short Leads, IPAK, TO-251AATO-252-3, DPAK (2 Leads + Tab), SC-63TO-262-3 Long Leads, I2PAK, TO-262AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
55Results
Applied FiltersRemove All

Showing
of 55
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRF3710PBF
MOSFET N-CH 100V 57A TO220AB
Infineon Technologies
6,596
In Stock
1 : ¥13.38000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
57A (Tc)
10V
23mOhm @ 28A, 10V
4V @ 250µA
130 nC @ 10 V
±20V
3130 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
8-WDFN
FDMC86184
MOSFET N-CH 100V 57A 8PQFN
onsemi
8,672
In Stock
1 : ¥16.83000
Cut Tape (CT)
3,000 : ¥7.57977
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
57A (Tc)
6V, 10V
8.5mOhm @ 21A, 10V
4V @ 110µA
20 nC @ 6 V
±20V
2090 pF @ 50 V
-
54W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PQFN (3.3x3.3)
8-PowerWDFN
TO-247-3 AC EP
IRFP3710PBF
MOSFET N-CH 100V 57A TO247AC
Infineon Technologies
10,496
In Stock
1 : ¥23.23000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
57A (Tc)
10V
25mOhm @ 28A, 10V
4V @ 250µA
190 nC @ 10 V
±20V
3000 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AC
TO-247-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF3710STRLPBF
MOSFET N-CH 100V 57A D2PAK
Infineon Technologies
16,269
In Stock
1 : ¥15.27000
Cut Tape (CT)
800 : ¥8.54289
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
57A (Tc)
10V
23mOhm @ 28A, 10V
4V @ 250µA
130 nC @ 10 V
±20V
3130 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220-3
FDP150N10
MOSFET N-CH 100V 57A TO220-3
onsemi
1,077
In Stock
4,800
Factory
1 : ¥21.35000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
57A (Tc)
10V
15mOhm @ 49A, 10V
4.5V @ 250µA
69 nC @ 10 V
±20V
4760 pF @ 25 V
-
110W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-247-3 AC EP
IRFP4332PBF
MOSFET N-CH 250V 57A TO247AC
Infineon Technologies
553
In Stock
1 : ¥44.50000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
57A (Tc)
10V
33mOhm @ 35A, 10V
5V @ 250µA
150 nC @ 10 V
±30V
5860 pF @ 25 V
-
360W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AC
TO-247-3
TO-247-3
NTHL041N60S5H
NTHL041N60S5H
onsemi
428
In Stock
10,350
Factory
1 : ¥84.48000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
57A (Tc)
10V
41mOhm @ 28.5A, 10V
4.3V @ 6.7mA
108 nC @ 10 V
±30V
5840 pF @ 400 V
-
329W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065100K
E3M0040120K
SIC, MOSFET, 40M, 1200V, TO-247-
Wolfspeed, Inc.
298
In Stock
1 : ¥191.37000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
57A (Tc)
15V
53mOhm @ 31.9A, 15V
3.6V @ 8.77mA
94 nC @ 15 V
+19V, -8V
2726 pF @ 1000 V
-
242W
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
SOT-227-4, miniBLOC
APT53F80J
MOSFET N-CH 800V 57A ISOTOP
Microchip Technology
109
In Stock
1 : ¥573.95000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
57A (Tc)
10V
110mOhm @ 43A, 10V
5V @ 5mA
570 nC @ 10 V
±30V
17550 pF @ 25 V
-
960W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
LFPAK33
PSMN7R5-30MLDX
MOSFET N-CH 30V 57A LFPAK33
Nexperia USA Inc.
2,935
In Stock
1 : ¥5.66000
Cut Tape (CT)
1,500 : ¥2.41863
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
57A (Tc)
4.5V, 10V
7.6mOhm @ 15A, 10V
2.2V @ 1mA
11.3 nC @ 10 V
±20V
655 pF @ 15 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
PowerPak SO-8L
SQJA06EP-T1_GE3
MOSFET N-CH 60V 57A PPAK SO-8
Vishay Siliconix
8,894
In Stock
1 : ¥9.52000
Cut Tape (CT)
3,000 : ¥3.94452
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
57A (Tc)
10V
8.7mOhm @ 10A, 10V
3.5V @ 250µA
45 nC @ 10 V
±20V
2800 pF @ 25 V
-
55W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO-263
FDB150N10
MOSFET N-CH 100V 57A D2PAK
onsemi
584
In Stock
1 : ¥31.44000
Cut Tape (CT)
800 : ¥18.96276
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
57A (Tc)
10V
15mOhm @ 49A, 10V
4.5V @ 250µA
69 nC @ 10 V
±20V
4760 pF @ 25 V
-
110W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220AB
SUP57N20-33-E3
MOSFET N-CH 200V 57A TO220AB
Vishay Siliconix
413
In Stock
1 : ¥36.94000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
57A (Tc)
10V
33mOhm @ 30A, 10V
4V @ 250µA
130 nC @ 10 V
±20V
5100 pF @ 25 V
-
3.75W (Ta), 300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
LFPAK56/POWER-SO8/SOT669
PSMN9R1-30YL,115
MOSFET N-CH 30V 57A LFPAK56
Nexperia USA Inc.
2,994
In Stock
1 : ¥4.84000
Cut Tape (CT)
1,500 : ¥2.07589
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
30 V
57A (Tc)
4.5V, 10V
9.1mOhm @ 15A, 10V
2.15V @ 1mA
16.7 nC @ 10 V
±20V
894 pF @ 15 V
-
52W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
PowerPak SO-8L
SQJA92EP-T1_GE3
MOSFET N-CH 80V 57A PPAK SO-8
Vishay Siliconix
3,000
In Stock
1 : ¥9.36000
Cut Tape (CT)
3,000 : ¥3.88453
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
57A (Tc)
10V
9.5mOhm @ 10A, 10V
3.5V @ 250µA
45 nC @ 10 V
±20V
2650 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
DFN5060
MCAC57N15Y-TP
N-CHANNEL MOSFET, DFN5060
Micro Commercial Co
9,830
In Stock
1 : ¥16.83000
Cut Tape (CT)
5,000 : ¥7.31180
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
57A (Tc)
6V, 10V
17mOhm @ 20A, 10V
4V @ 250µA
40 nC @ 10 V
±20V
2527 pF @ 75 V
-
104W (Tj)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN5060
8-PowerTDFN
TO-262-3 Long Leads
FDI150N10
MOSFET N-CH 100V 57A I2PAK
onsemi
3,088
In Stock
1 : ¥23.32000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
57A (Tc)
10V
16mOhm @ 49A, 10V
4.5V @ 250µA
69 nC @ 10 V
±20V
4760 pF @ 25 V
-
110W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-262 (I2PAK)
TO-262-3 Long Leads, I2PAK, TO-262AA
D2PAK-7
NTBG040N120M3S
SILICON CARBIDE (SIC) MOSFET - E
onsemi
721
In Stock
1 : ¥107.71000
Cut Tape (CT)
800 : ¥74.37295
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
57A (Tc)
18V
54mOhm @ 20A, 18V
4.4V @ 10mA
75 nC @ 18 V
+22V, -10V
1700 pF @ 800 V
-
263W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
D2PAK-7
NVBG040N120M3S
SILICON CARBIDE (SIC) MOSFET-ELI
onsemi
800
In Stock
1 : ¥153.77000
Cut Tape (CT)
800 : ¥106.16631
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
57A (Tc)
18V
54mOhm @ 20A, 18V
4.4V @ 10mA
75 nC @ 18 V
+22V, -10V
1700 pF @ 800 V
-
263W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO252-3
IRLR8259TRPBF
MOSFET N-CH 25V 57A DPAK
Infineon Technologies
3,497
In Stock
1 : ¥7.47000
Cut Tape (CT)
2,000 : ¥3.09221
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
25 V
57A (Tc)
4.5V, 10V
8.7mOhm @ 21A, 10V
2.35V @ 25µA
10 nC @ 4.5 V
±20V
900 pF @ 13 V
-
48W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220AB PKG
IRFZ44VZPBF
MOSFET N-CH 60V 57A TO220AB
Infineon Technologies
275
In Stock
1 : ¥16.99000
Tube
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
60 V
57A (Tc)
10V
12mOhm @ 34A, 10V
4V @ 250µA
65 nC @ 10 V
±20V
1690 pF @ 25 V
-
92W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
GCMX040B120S1-E1
GCMX040B120S1-E1
SIC 1200V 40M MOSFET SOT-227
SemiQ
97
In Stock
1 : ¥231.76000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
57A (Tc)
20V
52mOhm @ 40A, 20V
4V @ 10mA
121 nC @ 20 V
+25V, -10V
3185 pF @ 1000 V
-
242W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
SOT-227-4  miniBLOC
GCMS040B120S1-E1
SIC 1200V 40M MOSFET & 15A SBD S
SemiQ
63
In Stock
1 : ¥275.44000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
57A (Tc)
20V
52mOhm @ 40A, 20V
4V @ 10mA
124 nC @ 20 V
+25V, -10V
3110 pF @ 1000 V
-
242W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
TO-264 PKG
APT40M70LVRG
MOSFET N-CH 400V 57A TO264
Microchip Technology
10
In Stock
1 : ¥183.08000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
400 V
57A (Tc)
10V
70mOhm @ 28.5A, 10V
4V @ 2.5mA
495 nC @ 10 V
±30V
8890 pF @ 25 V
-
520W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-264 (L)
TO-264-3, TO-264AA
D2PAK SOT404
BUK7618-55,118
MOSFET N-CH 55V 57A D2PAK
Nexperia USA Inc.
0
In Stock
4,800 : ¥4.54143
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
55 V
57A (Tc)
10V
18mOhm @ 25A, 10V
4V @ 1mA
-
±16V
2000 pF @ 25 V
-
125W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 55

57A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.