4.1A (Tc) Single FETs, MOSFETs

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of 36

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SQ2389ES-T1_BE3 MOSFET P-CH 40V 4.1A SOT23-3 Vishay Siliconix	98,705 In Stock	1 : ¥5.42000 Cut Tape (CT) 3,000 : ¥2.05835 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	4.1A (Tc)	4.5V, 10V	94mOhm @ 10A, 10V	2.5V @ 250µA	12 nC @ 10 V	±20V	420 pF @ 20 V	-	3W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
TSM650P02CX RFG MOSFET P-CHANNEL 20V 4.1A SOT23 Taiwan Semiconductor Corporation	69,702 In Stock	1 : ¥2.22000 Cut Tape (CT) 3,000 : ¥0.68347 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.1A (Tc)	1.8V, 4.5V	65mOhm @ 3A, 4.5V	800mV @ 250µA	5.1 nC @ 4.5 V	±10V	515 pF @ 10 V	-	1.56W (Tc)	150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
TSM650P03CX RFG MOSFET P-CHANNEL 30V 4.1A SOT23 Taiwan Semiconductor Corporation	24,002 In Stock	1 : ¥3.61000 Cut Tape (CT) 3,000 : ¥0.98105 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4.1A (Tc)	2.5V, 10V	65mOhm @ 4A, 10V	900mV @ 250µA	6.4 nC @ 4.5 V	±12V	810 pF @ 15 V	-	1.56W (Tc)	150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SQ2389ES-T1_GE3 MOSFET P-CH 40V 4.1A SOT23-3 Vishay Siliconix	12,706 In Stock	1 : ¥5.42000 Cut Tape (CT) 3,000 : ¥2.05835 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	4.1A (Tc)	4.5V, 10V	94mOhm @ 10A, 10V	2.5V @ 250µA	12 nC @ 10 V	±20V	420 pF @ 20 V	-	3W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI3458BDV-T1-GE3 MOSFET N-CH 60V 4.1A 6TSOP Vishay Siliconix	33,567 In Stock	1 : ¥7.14000 Cut Tape (CT) 3,000 : ¥2.71769 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	4.1A (Tc)	4.5V, 10V	100mOhm @ 3.2A, 10V	3V @ 250µA	11 nC @ 10 V	±20V	350 pF @ 30 V	-	2W (Ta), 3.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3458BDV-T1-E3 MOSFET N-CH 60V 4.1A 6TSOP Vishay Siliconix	6,565 In Stock	1 : ¥7.14000 Cut Tape (CT) 3,000 : ¥2.71769 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	60 V	4.1A (Tc)	4.5V, 10V	100mOhm @ 3.2A, 10V	3V @ 250µA	11 nC @ 10 V	±20V	350 pF @ 30 V	-	2W (Ta), 3.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
IRFBE30PBF MOSFET N-CH 800V 4.1A TO220AB Vishay Siliconix	2,335 In Stock	1 : ¥17.73000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4.1A (Tc)	10V	3Ohm @ 2.5A, 10V	4V @ 250µA	78 nC @ 10 V	±20V	1300 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFI620GPBF MOSFET N-CH 200V 4.1A TO220-3 Vishay Siliconix	725 In Stock	1 : ¥9.69000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	4.1A (Tc)	10V	800mOhm @ 2.5A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	260 pF @ 25 V	-	30W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFBE30PBF-BE3 MOSFET N-CH 800V 4.1A TO220AB Vishay Siliconix	2,706 In Stock	1 : ¥12.48000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4.1A (Tc)	-	3Ohm @ 2.5A, 10V	4V @ 250µA	78 nC @ 10 V	±20V	1300 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFI9634GPBF MOSFET P-CH 250V 4.1A TO220-3 Vishay Siliconix	2,868 In Stock	1 : ¥17.16000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	250 V	4.1A (Tc)	10V	1Ohm @ 2.5A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	680 pF @ 25 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFBE30LPBF MOSFET N-CH 800V 4.1A I2PAK Vishay Siliconix	989 In Stock	1 : ¥22.50000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4.1A (Tc)	10V	3Ohm @ 2.5A, 10V	4V @ 250µA	78 nC @ 10 V	±20V	1300 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK	TO-262-3 Long Leads, I2PAK, TO-262AA
IRFBE30STRLPBF MOSFET N-CH 800V 4.1A D2PAK Vishay Siliconix	800 In Stock	1 : ¥28.24000 Cut Tape (CT) 800 : ¥17.04833 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4.1A (Tc)	10V	3Ohm @ 2.5A, 10V	4V @ 250µA	78 nC @ 10 V	±20V	1300 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHFBE30S-GE3 MOSFET N-CHANNEL 800V Vishay Siliconix	960 In Stock	1 : ¥10.18000 Cut Tape (CT) 1,000 : ¥6.08557 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4.1A (Tc)	10V	3Ohm @ 2.5A, 10V	4V @ 250µA	78 nC @ 10 V	±20V	1300 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFPE30PBF MOSFET N-CH 800V 4.1A TO247-3 Vishay Siliconix	383 In Stock	1 : ¥43.92000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4.1A (Tc)	10V	3Ohm @ 2.5A, 10V	4V @ 250µA	78 nC @ 10 V	±20V	1300 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
G29 P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4 Goford Semiconductor	12,714 In Stock	1 : ¥3.53000 Cut Tape (CT) 3,000 : ¥0.64179 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.1A (Tc)	2.5V, 4.5V	30mOhm @ 3A, 4.5V	900mV @ 250µA	12.5 nC @ 10 V	±12V	1151 pF @ 10 V	-	1.05W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IPA50R800CEXKSA2 MOSFET N-CH 500V 4.1A TO220 Infineon Technologies	313 In Stock	1 : ¥5.42000 Tube	CoolMOS™ CE	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	4.1A (Tc)	13V	800mOhm @ 1.5A, 13V	3.5V @ 130µA	12.4 nC @ 10 V	±20V	280 pF @ 100 V	-	26.4W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-FP	TO-220-3 Full Pack
SIHFBE30STRL-GE3 MOSFET N-CHANNEL 800V Vishay Siliconix	800 In Stock	1 : ¥14.53000 Cut Tape (CT) 800 : ¥6.08558 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4.1A (Tc)	10V	3Ohm @ 2.5A, 10V	4V @ 250µA	78 nC @ 10 V	±20V	1300 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFBE30SPBF MOSFET N-CH 800V 4.1A D2PAK Vishay Siliconix	0 In Stock Check Lead Time	1 : ¥25.29000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4.1A (Tc)	10V	3Ohm @ 2.5A, 10V	4V @ 250µA	78 nC @ 10 V	±20V	1300 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PMN55LN,135 MOSFET N-CH 20V 4.1A 6TSOP NXP USA Inc.	0 In Stock	10,000 : ¥1.19761 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	4.1A (Tc)	4.5V, 10V	65mOhm @ 2.5A, 10V	2V @ 1mA	13.1 nC @ 10 V	±15V	500 pF @ 20 V	-	1.75W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SC-74	SC-74, SOT-457
TSM650P02CX -20V, -4.1A, SINGLE P-CHANNEL PO Taiwan Semiconductor Corporation	0 In Stock Check Lead Time	12,000 : ¥1.84911 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.1A (Tc)	1.8V, 4.5V	65mOhm @ 3A, 4.5V	800mV @ 250µA	6.4 nC @ 4.5 V	±10V	515 pF @ 10 V	-	1.56W (Tc)	150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
TSM650P03CX -30V, -4.1A, SINGLE P-CHANNEL PO Taiwan Semiconductor Corporation	0 In Stock Check Lead Time	12,000 : ¥2.13104 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4.1A (Tc)	2.5V, 10V	65mOhm @ 4A, 10V	900mV @ 250µA	8 nC @ 4.5 V	±12V	810 pF @ 15 V	-	1.56W (Tc)	150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
NDD04N60ZT4G MOSFET N-CH 600V 4.1A DPAK onsemi	0 In Stock	Obsolete	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	4.1A (Tc)	10V	2Ohm @ 2A, 10V	4.5V @ 50µA	29 nC @ 10 V	±30V	640 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFPE30 MOSFET N-CH 800V 4.1A TO247-3 Vishay Siliconix	0 In Stock	Obsolete	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	800 V	4.1A (Tc)	10V	3Ohm @ 2.5A, 10V	4V @ 250µA	78 nC @ 10 V	±20V	1300 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFBE30 MOSFET N-CH 800V 4.1A TO220AB Vishay Siliconix	0 In Stock	Obsolete	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	800 V	4.1A (Tc)	10V	3Ohm @ 2.5A, 10V	4V @ 250µA	78 nC @ 10 V	±20V	1300 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFI620G MOSFET N-CH 200V 4.1A TO220-3 Vishay Siliconix	0 In Stock	Obsolete	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	4.1A (Tc)	10V	800mOhm @ 2.5A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	260 pF @ 25 V	-	30W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

4.1A (Tc) Single FETs, MOSFETs

4.1A (Tc) Single FETs, MOSFETs

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