29A (Ta) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

EPC2204 TRANS GAN 100V DIE 5.6MOHM EPC	3,702 In Stock	1 : ¥19.78000 Cut Tape (CT) 2,500 : ¥8.93236 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	29A (Ta)	5V	6mOhm @ 16A, 5V	2.5V @ 4mA	7.4 nC @ 5 V	+6V, -4V	851 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2055 GANFET N-CH 40V 29A DIE EPC	9,997 In Stock	1 : ¥20.03000 Cut Tape (CT) 2,500 : ¥9.04263 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	40 V	29A (Ta)	5V	3.6mOhm @ 15A, 5V	2.5V @ 7mA	8.5 nC @ 5 V	+6V, -4V	1111 pF @ 20 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2204A TRANS GAN 80V .006OHM AECQ101 EPC	26,031 In Stock	1 : ¥23.81000 Cut Tape (CT) 2,500 : ¥10.71885 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	80 V	29A (Ta)	5V	6mOhm @ 16A, 5V	2.5V @ 4mA	7.4 nC @ 5 V	+6V, -4V	851 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	Die	Die
EPC2619 TRANS GAN 100V .0042 OHM 6LGA EPC	7,487 In Stock	1 : ¥28.57000 Cut Tape (CT) 2,500 : ¥13.90473 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	29A (Ta)	5V	3.3mOhm @ 16A, 5V	2.5V @ 5.5mA	8.3 nC @ 5 V	+6V, -4V	1180 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
TK095N65Z5,S1F(S 650V DTMOS6-HIGH SPEED DIODE Toshiba Semiconductor and Storage	240 In Stock	1 : ¥50.77000 Tube	DTMOSVI	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	29A (Ta)	10V	95mOhm @ 14.5A, 10V	4.5V @ 1.27mA	50 nC @ 10 V	±30V	2880 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-247	TO-247-3
EPC2619ENGRT TRANS GAN 80V .0033OHM 6LGA EPC	18,981 In Stock	1 : ¥28.57000 Cut Tape (CT) 2,500 : ¥13.90473 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	GaNFET (Gallium Nitride)	100 V	29A (Ta)	5V	3.3mOhm @ 16A, 5V	2.5V @ 5.5mA	8.3 nC @ 5 V	+6V, -4V	1180 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
FDMS3008SDC MOSFET N-CH 30V 29A DUAL COOL56 onsemi	0 In Stock	Obsolete	Dual Cool™, PowerTrench®, SyncFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	29A (Ta)	4.5V, 10V	2.6mOhm @ 28A, 10V	3V @ 1mA	64 nC @ 10 V	±20V	4520 pF @ 15 V	-	3.3W (Ta), 78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
NVMFS5830NLT3G MOSFET N-CH 40V 29A 5DFN onsemi	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	29A (Ta)	4.5V, 10V	2.3mOhm @ 20A, 10V	2.4V @ 250µA	113 nC @ 10 V	±20V	5880 pF @ 25 V	-	3.8W (Ta), 158W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5830NLWFT1G MOSFET N-CH 40V 29A 5DFN onsemi	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	29A (Ta)	4.5V, 10V	2.3mOhm @ 20A, 10V	2.4V @ 250µA	113 nC @ 10 V	±20V	5880 pF @ 25 V	-	3.8W (Ta), 158W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5830NLWFT3G MOSFET N-CH 40V 29A 5DFN onsemi	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	29A (Ta)	4.5V, 10V	2.3mOhm @ 20A, 10V	2.4V @ 250µA	113 nC @ 10 V	±20V	5880 pF @ 25 V	-	3.8W (Ta), 158W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.