Single FETs, MOSFETs

Results: 3
Series
CoolMOS™CoolMOS™ C6
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
600 V650 V800 V
Current - Continuous Drain (Id) @ 25°C
17A (Tc)37.9A (Tc)47A (Tc)
Rds On (Max) @ Id, Vgs
70mOhm @ 30A, 10V99mOhm @ 18.1A, 10V290mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.21mA3.9V @ 1mA3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs
119 nC @ 10 V177 nC @ 10 V320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2300 pF @ 100 V2660 pF @ 100 V6800 pF @ 25 V
Power Dissipation (Max)
227W (Tc)278W (Tc)415W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO247-3-1PG-TO263-3PG-TO263-3-2
Package / Case
TO-247-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-TO247-3
SPW47N60C3FKSA1
MOSFET N-CH 650V 47A TO247-3
Infineon Technologies
2,283
In Stock
1 : ¥125.61000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
47A (Tc)
10V
70mOhm @ 30A, 10V
3.9V @ 2.7mA
320 nC @ 10 V
±20V
6800 pF @ 25 V
-
415W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB60R099C6ATMA1
MOSFET N-CH 600V 37.9A D2PAK
Infineon Technologies
4,803
In Stock
1 : ¥50.24000
Cut Tape (CT)
1,000 : ¥28.50485
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
37.9A (Tc)
10V
99mOhm @ 18.1A, 10V
3.5V @ 1.21mA
119 nC @ 10 V
±20V
2660 pF @ 100 V
-
278W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB17N80C3ATMA1
MOSFET N-CH 800V 17A TO263-3
Infineon Technologies
1,659
In Stock
1 : ¥36.94000
Cut Tape (CT)
1,000 : ¥19.10980
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
17A (Tc)
10V
290mOhm @ 11A, 10V
3.9V @ 1mA
177 nC @ 10 V
±20V
2300 pF @ 100 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.