24A (Ta) Single FETs, MOSFETs

Results: 25
Manufacturer
Alpha & Omega Semiconductor Inc.EPCInfineon TechnologiesonsemiToshiba Semiconductor and StorageWeEn Semiconductors
Series
-DTMOSVIeGaN®HEXFET®U-MOSIVU-MOSV-HU-MOSVI
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyObsolete
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V40 V60 V170 V650 V1200 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V10V20V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 24A, 10V3.3mOhm @ 20A, 10V7mOhm @ 12A, 10V9mOhm @ 10A, 5V9mOhm @ 12A, 10V11mOhm @ 12A, 10V37mOhm @ 24A, 10V42mOhm @ 10A, 10V45mOhm @ 10A, 5V45mOhm @ 12A, 10V110mOhm @ 12A, 10V125mOhm @ 12A, 10V196mOhm @ 10A, 20V
Vgs(th) (Max) @ Id
2V @ 250µA2V @ 500µA2.3V @ 250µA2.35V @ 100µA2.5V @ 1mA2.5V @ 3mA3V @ 200µA3V @ 250µA4V @ 1.02mA4V @ 250µA4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
7.4 nC @ 5 V14.1 nC @ 10 V21 nC @ 10 V26 nC @ 10 V32 nC @ 5 V35 nC @ 20 V40 nC @ 10 V48 nC @ 10 V56 nC @ 10 V66 nC @ 4.5 V87 nC @ 10 V
Vgs (Max)
+6V, -4V±15V+20V, -25V±20V+25V, -10V±30V
Input Capacitance (Ciss) (Max) @ Vds
736 pF @ 1000 V836 pF @ 85 V850 pF @ 20 V1140 pF @ 25 V1200 pF @ 25 V1270 pF @ 10 V2150 pF @ 10 V2250 pF @ 300 V2400 pF @ 10 V4245 pF @ 20 V5720 pF @ 15 V
Power Dissipation (Max)
1.36W (Ta), 62.5W (Tj)1.6W (Ta), 30W (Tc)2.5W (Ta)2.5W (Ta), 50W (Tc)3.1W (Ta)45W (Tc)55W (Tc)155W (Ta)190W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)150°C
Mounting Type
Surface MountThrough Hole
Supplier Device Package
4-DFN-EP (8x8)8-SO8-SOIC8-SOP Advance (5x5)8-TSON Advance (3.1x3.1)DPAKDieIPAKTO-220TO-220SISTO-247TO-247-3TO-247-4L(T)TO-252 (DPAK)
Package / Case
4-VSFN Exposed Pad8-PowerSFN8-PowerVDFN8-SOIC (0.154", 3.90mm Width)DieTO-220-3 Full PackTO-220-3TO-247-3TO-247-4TO-251-3 Short Leads, IPAK, TO-251AATO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-3P-3,TO-247-3
NTD24N06LT4G
MOSFET N-CH 60V 24A DPAK
onsemi
690
In Stock
1 : ¥12.72000
Cut Tape (CT)
2,500 : ¥5.73436
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
24A (Ta)
5V
45mOhm @ 10A, 5V
2V @ 250µA
32 nC @ 5 V
±15V
1140 pF @ 25 V
-
1.36W (Ta), 62.5W (Tj)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
EPC2059
EPC2059
TRANS GAN 170V DIE .009OHM
EPC
28,285
In Stock
1 : ¥27.25000
Cut Tape (CT)
2,500 : ¥13.26299
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
170 V
24A (Ta)
5V
9mOhm @ 10A, 5V
2.5V @ 3mA
7.4 nC @ 5 V
+6V, -4V
836 pF @ 85 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
IRF8788TRPBF
MOSFET N-CH 30V 24A 8SO
Infineon Technologies
7,173
In Stock
1 : ¥10.84000
Cut Tape (CT)
4,000 : ¥4.48411
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
24A (Ta)
4.5V, 10V
2.8mOhm @ 24A, 10V
2.35V @ 100µA
66 nC @ 4.5 V
±20V
5720 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
3,960
In Stock
1 : ¥34.71000
Cut Tape (CT)
2,000 : ¥16.89580
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
24A (Ta)
10V
110mOhm @ 12A, 10V
4V @ 1.02mA
40 nC @ 10 V
±30V
2250 pF @ 300 V
-
190W (Tc)
150°C
Surface Mount
TOLL
8-PowerSFN
IPAK
NTD24N06-1G
MOSFET N-CH 60V 24A IPAK
onsemi
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
24A (Ta)
10V
42mOhm @ 10A, 10V
4V @ 250µA
48 nC @ 10 V
±20V
1200 pF @ 25 V
-
1.36W (Ta), 62.5W (Tj)
-55°C ~ 175°C (TJ)
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
DPAK_369C
NTD24N06T4G
MOSFET N-CH 60V 24A DPAK
onsemi
0
In Stock
Obsolete
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
24A (Ta)
10V
42mOhm @ 10A, 10V
4V @ 250µA
48 nC @ 10 V
±20V
1200 pF @ 25 V
-
1.36W (Ta), 62.5W (Tj)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPAK
NTD24N06L-001
MOSFET N-CH 60V 24A IPAK
onsemi
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
24A (Ta)
5V
45mOhm @ 10A, 5V
2V @ 250µA
32 nC @ 5 V
±15V
1140 pF @ 25 V
-
1.36W (Ta), 62.5W (Tj)
-55°C ~ 175°C (TJ)
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
42
In Stock
1 : ¥32.41000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
24A (Ta)
10V
110mOhm @ 12A, 10V
4V @ 1.02mA
40 nC @ 10 V
±30V
2250 pF @ 300 V
-
45W (Tc)
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
56
In Stock
1 : ¥33.05000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
24A (Ta)
10V
110mOhm @ 12A, 10V
4V @ 1.02mA
40 nC @ 10 V
±30V
2250 pF @ 300 V
-
190W (Tc)
150°C
Through Hole
TO-220
TO-220-3
TK110Z65Z,S1F
TK110Z65Z,S1F
POWER MOSFET TRANSISTOR TO-247-4
Toshiba Semiconductor and Storage
32
In Stock
1 : ¥48.54000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
24A (Ta)
10V
110mOhm @ 12A, 10V
4V @ 1.02mA
40 nC @ 10 V
±30V
2250 pF @ 300 V
-
190W (Tc)
150°C
Through Hole
TO-247-4L(T)
TO-247-4
0
In Stock
Check Lead Time
1 : ¥37.52000
Cut Tape (CT)
2,500 : ¥18.26573
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
24A (Ta)
10V
125mOhm @ 12A, 10V
4V @ 1.02mA
40 nC @ 10 V
±30V
2250 pF @ 300 V
-
190W (Tc)
150°C
Surface Mount
4-DFN-EP (8x8)
4-VSFN Exposed Pad
POWER MOSFET TRANSISTOR TO-247(O
TK110N65Z,S1F
POWER MOSFET TRANSISTOR TO-247(O
Toshiba Semiconductor and Storage
25
In Stock
1 : ¥45.03000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
24A (Ta)
10V
110mOhm @ 12A, 10V
4V @ 1.02mA
40 nC @ 10 V
±30V
2250 pF @ 300 V
-
190W (Tc)
150°C
Through Hole
TO-247
TO-247-3
0
In Stock
Check Lead Time
1 : ¥13.46000
Cut Tape (CT)
3,000 : ¥6.07620
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
24A (Ta)
4.5V, 10V
3.3mOhm @ 20A, 10V
2.3V @ 250µA
87 nC @ 10 V
±20V
4245 pF @ 20 V
-
3.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TO-247-3-Top
WNSCM160120WQ
WNSCM160120W/TO-247/STANDARD MAR
WeEn Semiconductors
0
In Stock
Check Lead Time
3,000 : ¥40.90581
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
24A (Ta)
20V
196mOhm @ 10A, 20V
4.5V @ 3mA
35 nC @ 20 V
+25V, -10V
736 pF @ 1000 V
-
155W (Ta)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IPAK
NTD24N06-001
MOSFET N-CH 60V 24A IPAK
onsemi
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
24A (Ta)
10V
42mOhm @ 10A, 10V
4V @ 250µA
48 nC @ 10 V
±20V
1200 pF @ 25 V
-
1.36W (Ta), 62.5W (Tj)
-55°C ~ 175°C (TJ)
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
IPAK
NTD24N06L-1G
MOSFET N-CH 60V 24A IPAK
onsemi
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
24A (Ta)
5V
45mOhm @ 10A, 5V
2V @ 250µA
32 nC @ 5 V
±15V
1140 pF @ 25 V
-
1.36W (Ta), 62.5W (Tj)
-55°C ~ 175°C (TJ)
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
DPAK_369C
NTD24N06G
MOSFET N-CH 60V 24A DPAK
onsemi
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
24A (Ta)
10V
42mOhm @ 10A, 10V
4V @ 250µA
48 nC @ 10 V
±20V
1200 pF @ 25 V
-
1.36W (Ta), 62.5W (Tj)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK_369C
NTD24N06L
MOSFET N-CH 60V 24A DPAK
onsemi
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
24A (Ta)
5V
45mOhm @ 10A, 5V
2V @ 250µA
32 nC @ 5 V
±15V
1140 pF @ 25 V
-
1.36W (Ta), 62.5W (Tj)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK_369C
NTD24N06LG
MOSFET N-CH 60V 24A DPAK
onsemi
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
24A (Ta)
5V
45mOhm @ 10A, 5V
2V @ 250µA
32 nC @ 5 V
±15V
1140 pF @ 25 V
-
1.36W (Ta), 62.5W (Tj)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
0
In Stock
Obsolete
-
Tape & Reel (TR)
Obsolete
P-Channel
MOSFET (Metal Oxide)
40 V
24A (Ta)
4.5V, 10V
45mOhm @ 12A, 10V
3V @ 250µA
14.1 nC @ 10 V
±20V
850 pF @ 20 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NTD5414NT4G
MOSFET N-CH 60V 24A DPAK
onsemi
0
In Stock
Obsolete
-
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
24A (Ta)
10V
37mOhm @ 24A, 10V
4V @ 250µA
48 nC @ 10 V
±20V
1200 pF @ 25 V
-
55W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
24A (Ta)
4.5V, 10V
11mOhm @ 12A, 10V
2.5V @ 1mA
21 nC @ 10 V
±20V
2150 pF @ 10 V
-
1.6W (Ta), 30W (Tc)
150°C (TJ)
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
IRF8788PBF
MOSFET N-CH 30V 24A 8SO
Infineon Technologies
0
In Stock
Discontinued at Digi-Key
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
30 V
24A (Ta)
4.5V, 10V
2.8mOhm @ 24A, 10V
2.35V @ 100µA
66 nC @ 4.5 V
±20V
5720 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
24A (Ta)
-
7mOhm @ 12A, 10V
3V @ 200µA
26 nC @ 10 V
-
1270 pF @ 10 V
-
-
150°C (TJ)
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
0
In Stock
Active
Tape & Reel (TR)
Active
P-Channel
MOSFET (Metal Oxide)
30 V
24A (Ta)
4.5V, 10V
9mOhm @ 12A, 10V
2V @ 500µA
56 nC @ 10 V
+20V, -25V
2400 pF @ 10 V
-
1.6W (Ta), 30W (Tc)
150°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
Showing
of 25

24A (Ta) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.