RF FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	Frequency	Gain	Voltage - Test	Current Rating (Amps)	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

MRFE6VS25LR5 RF MOSFET LDMOS 50V NI360 NXP USA Inc.	423 In Stock	1 : ¥637.41000 Cut Tape (CT) 50 : ¥589.62020 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	LDMOS	-	512MHz	25.9dB	50 V	-	-	10 mA	25W	133 V	-	-	Chassis Mount	NI-360	NI-360
BLF884P,112 RF MOSFET LDMOS 50V LDMOST Ampleon USA Inc.	87 In Stock	1 : ¥1,067.20000 Tray	-	Tray	Active	LDMOS	Dual, Common Source	860MHz	21dB	50 V	-	-	650 mA	150W	104 V	-	-	Chassis Mount	SOT-1121A	LDMOST
MRFE6VP100HR5 RF MOSFET LDMOS 50V NI780 NXP USA Inc.	27 In Stock	1 : ¥1,091.26000 Cut Tape (CT) 50 : ¥1,017.55500 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	LDMOS	-	512MHz	26dB	50 V	-	-	100 mA	100W	133 V	-	-	Chassis Mount	NI-780-4	NI-780-4
ART1K6FHU RF MOSFET LDMOS 55V SOT539A Ampleon USA Inc.	457 In Stock	1 : ¥1,709.05000 Tray	ART	Tray	Active	LDMOS	Dual, Common Source	1MHz ~ 425MHz	28dB	55 V	-	-	50 mA	1600W	177 V	-	-	Chassis Mount	SOT-539A	SOT539A
BLP15M9S100GZ RF MOSFET LDMOS 32V SOT1483-1 Ampleon USA Inc.	340 In Stock	1 : ¥208.20000 Cut Tape (CT) 500 : ¥148.87246 Tape & Reel (TR)	BLP	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	LDMOS	Dual, Common Source	1.4GHz	18dB	32 V	1.4µA	-	900 mA	100W	65 V	-	-	Surface Mount	SOT-1483-1	SOT1483-1
BLF574,112 RF MOSFET LDMOS 50V SOT539A Ampleon USA Inc.	0 In Stock Check Lead Time	1 : ¥2,775.27000 Tray	-	Tray	Active	LDMOS	Dual, Common Source	225MHz	26.5dB	50 V	56A	-	1 A	400W	110 V	-	-	Chassis Mount	SOT-539A	SOT539A
MMRF1305HSR5 RF MOSFET LDMOS 50V NI780 NXP USA Inc.	0 In Stock Check Lead Time	50 : ¥701.30240 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	LDMOS	Dual	512MHz	26dB	50 V	-	-	100 mA	100W	133 V	-	-	Surface Mount	NI-780S-4L	NI-780S-4L

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RF FETs, MOSFETs

RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.