Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSC160N15NS5ATMA1 MOSFET N-CH 150V 56A TDSON Infineon Technologies	9,970 In Stock	1 : ¥22.82000 Cut Tape (CT) 5,000 : ¥9.88988 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	56A (Tc)	8V, 10V	16mOhm @ 28A, 10V	4.6V @ 60µA	23.1 nC @ 10 V	±20V	1820 pF @ 75 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN
IPB107N20N3GATMA1 MOSFET N-CH 200V 88A D2PAK Infineon Technologies	5,748 In Stock	1 : ¥64.53000 Cut Tape (CT) 1,000 : ¥36.61949 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	88A (Tc)	10V	10.7mOhm @ 88A, 10V	4V @ 270µA	87 nC @ 10 V	±20V	7100 pF @ 100 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FDMS8D8N15C MOSFET N-CH 150V 12.2A/85A 8PQFN onsemi	2,545 In Stock 198,000 Factory	1 : ¥28.98000 Cut Tape (CT) 3,000 : ¥14.10032 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	12.2A (Ta), 85A (Tc)	8V, 10V	8.8mOhm @ 45A, 10V	4.5V @ 250µA	50 nC @ 10 V	±20V	3600 pF @ 75 V	-	2.7W (Ta), 132W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.