Single FETs, MOSFETs

Results: 3
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDDiodes IncorporatedInfineon Technologies
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V50 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)3A (Ta)4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
46mOhm @ 4.1A, 4.5V120mOhm @ 2.8A, 4.5V3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.1V @ 5µA1.2V @ 250µA1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.5 nC @ 4.5 V5.5 nC @ 4.5 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
27 pF @ 25 V290 pF @ 16 V476 pF @ 10 V
Power Dissipation (Max)
350mW (Ta)1.3W (Ta)1.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
Micro3™/SOT-23SOT-23SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMG2301L-7
MOSFET P-CH 20V 3A SOT23
Diodes Incorporated
180,457
In Stock
807,000
Factory
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45078
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3A (Ta)
2.5V, 4.5V
120mOhm @ 2.8A, 4.5V
1.2V @ 250µA
5.5 nC @ 4.5 V
±8V
476 pF @ 10 V
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML6246TRPBF
MOSFET N-CH 20V 4.1A SOT23
Infineon Technologies
229,208
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.77324
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
4.1A (Ta)
2.5V, 4.5V
46mOhm @ 4.1A, 4.5V
1.1V @ 5µA
3.5 nC @ 4.5 V
±12V
290 pF @ 16 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
BSS138
BSS138
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
102,076
In Stock
1 : ¥1.31000
Cut Tape (CT)
3,000 : ¥0.22871
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
1.6V @ 250µA
-
±20V
27 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.