Single FETs, MOSFETs

Results: 2
Current - Continuous Drain (Id) @ 25°C
4A (Tc)63A (Tc)
Rds On (Max) @ Id, Vgs
50mOhm @ 40A, 20V1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
3.5V @ 10mA (Typ)3.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 20 V340 nC @ 20 V
Vgs (Max)
+20V, -5V+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
238 pF @ 1000 V7301 pF @ 1000 V
Power Dissipation (Max)
74W (Tc)536W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-247-4TO-263-7
Package / Case
TO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
GA20JT12-263
G2R1000MT33J
SIC MOSFET N-CH 4A TO263-7
GeneSiC Semiconductor
3,406
In Stock
1 : ¥153.44000
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N-Channel
SiCFET (Silicon Carbide)
3300 V
4A (Tc)
20V
1.2Ohm @ 2A, 20V
3.5V @ 2mA
21 nC @ 20 V
+20V, -5V
238 pF @ 1000 V
-
74W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G2R50MT33K
G2R50MT33K
3300V 50M TO-247-4 SIC MOSFET
GeneSiC Semiconductor
0
In Stock
Check Lead Time
1 : ¥2,427.41000
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N-Channel
SiCFET (Silicon Carbide)
3300 V
63A (Tc)
20V
50mOhm @ 40A, 20V
3.5V @ 10mA (Typ)
340 nC @ 20 V
+25V, -10V
7301 pF @ 1000 V
-
536W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.