Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesonsemiToshiba Semiconductor and Storage
Series
-OptiMOS™U-MOSIX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
40 V50 V100 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)16A (Tc)100A (Tc)150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
1.24mOhm @ 50A, 10V4mOhm @ 50A, 10V47mOhm @ 16A, 10V3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.6V @ 250µA2.4V @ 500µA3.8V @ 95µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.4 nC @ 10 V72 nC @ 10 V74 nC @ 10 V80 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
27 pF @ 25 V900 pF @ 25 V5300 pF @ 50 V7200 pF @ 20 V
Power Dissipation (Max)
350mW (Ta)960mW (Ta), 170W (Tc)2.5W (Ta), 139W (Tc)72W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)175°C
Supplier Device Package
8-SOP Advance (5x5.75)PG-TDSON-8-7SOT-23-3TO-252AA
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS138
MOSFET N-CH 50V 220MA SOT23-3
onsemi
31,696
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.48925
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
1.6V @ 250µA
2.4 nC @ 10 V
±20V
27 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-252AA
RFD16N05SM9A
MOSFET N-CH 50V 16A TO252AA
onsemi
7,430
In Stock
1 : ¥10.26000
Cut Tape (CT)
2,500 : ¥4.23287
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
16A (Tc)
10V
47mOhm @ 16A, 10V
4V @ 250µA
80 nC @ 20 V
±20V
900 pF @ 25 V
-
72W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
13,196
In Stock
1 : ¥12.72000
Cut Tape (CT)
5,000 : ¥5.00972
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
150A (Tc)
4.5V, 10V
1.24mOhm @ 50A, 10V
2.4V @ 500µA
74 nC @ 10 V
±20V
7200 pF @ 20 V
-
960mW (Ta), 170W (Tc)
175°C
Surface Mount
8-SOP Advance (5x5.75)
8-PowerTDFN
8-Power TDFN
BSC040N10NS5ATMA1
MOSFET N-CH 100V 100A TDSON
Infineon Technologies
50,551
In Stock
1 : ¥23.31000
Cut Tape (CT)
5,000 : ¥10.90407
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
100A (Tc)
6V, 10V
4mOhm @ 50A, 10V
3.8V @ 95µA
72 nC @ 10 V
±20V
5300 pF @ 50 V
-
2.5W (Ta), 139W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.