Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

CSD23381F4T MOSFET P-CH 12V 2.3A 3PICOSTAR Texas Instruments	14,101 In Stock	1 : ¥7.47000 Cut Tape (CT) 250 : ¥4.33644 Tape & Reel (TR)	FemtoFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	2.3A (Ta)	1.8V, 4.5V	175mOhm @ 500mA, 4.5V	1.2V @ 250µA	1.14 nC @ 6 V	-8V	236 pF @ 6 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PICOSTAR	3-XFDFN
CSD13381F4T MOSFET N-CH 12V 2.1A 3PICOSTAR Texas Instruments	1,374 In Stock	1 : ¥5.25000 Cut Tape (CT) 250 : ¥4.33644 Tape & Reel (TR)	FemtoFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	12 V	2.1A (Ta)	1.8V, 4.5V	180mOhm @ 500mA, 4.5V	1.1V @ 250µA	1.4 nC @ 4.5 V	8V	200 pF @ 6 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PICOSTAR	3-XFDFN
STL8N10LF3 MOSFET N CH 100V 20A PWRFLT5X6 STMicroelectronics	2,809 In Stock	1 : ¥15.11000 Cut Tape (CT) 3,000 : ¥6.79895 Tape & Reel (TR)	STripFET™ III	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	20A (Tc)	5V, 10V	35mOhm @ 4A, 10V	3V @ 250µA	20.5 nC @ 10 V	±20V	970 pF @ 25 V	-	4.3W (Ta), 70W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerFlat™ (5x6)	8-PowerVDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.