Single FETs, MOSFETs

Results: 2
Manufacturer
Toshiba Semiconductor and StorageVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
4A (Ta)5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
30mOhm @ 7.5A, 10V56mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.2 nC @ 4.5 V20 nC @ 5 V
Vgs (Max)
+12V, -8V±20V
Power Dissipation (Max)
1W (Ta)1.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Supplier Device Package
8-SOICSOT-23F
Package / Case
8-SOIC (0.154", 3.90mm Width)SOT-23-3 Flat Leads
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
SI4431BDY-T1-E3
MOSFET P-CH 30V 5.7A 8SO
Vishay Siliconix
38,456
In Stock
1 : ¥7.96000
Cut Tape (CT)
2,500 : ¥3.27878
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
5.7A (Ta)
4.5V, 10V
30mOhm @ 7.5A, 10V
3V @ 250µA
20 nC @ 5 V
±20V
-
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
SMOS LOW RON NCH ID: 4A VDSS: 30
SSM3K376R,LXHF
SMOS LOW RON NCH ID: 4A VDSS: 30
Toshiba Semiconductor and Storage
11,503
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.81839
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
4A (Ta)
1.8V, 4.5V
56mOhm @ 2A, 4.5V
1V @ 1mA
2.2 nC @ 4.5 V
+12V, -8V
200 pF @ 10 V
-
1W (Ta)
150°C
Automotive
AEC-Q101
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.