Single FETs, MOSFETs

Results: 2
Manufacturer
Microchip Technologyonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V400 V
Current - Continuous Drain (Id) @ 25°C
170mA (Tj)320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
0V4.5V, 10V
Rds On (Max) @ Id, Vgs
1.6Ohm @ 500mA, 10V25Ohm @ 120mA, 0V
Vgs(th) (Max) @ Id
2.3V @ 250µA-
Input Capacitance (Ciss) (Max) @ Vds
24.5 pF @ 20 V300 pF @ 25 V
FET Feature
-Depletion Mode
Power Dissipation (Max)
300mW (Ta)1.6W (Tc)
Supplier Device Package
SOT-23-3 (TO-236)TO-243AA (SOT-89)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-243AA
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002KT1G
MOSFET N-CH 60V 320MA SOT23-3
onsemi
277,473
In Stock
1 : ¥1.81000
Cut Tape (CT)
3,000 : ¥0.29870
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
4.5V, 10V
1.6Ohm @ 500mA, 10V
2.3V @ 250µA
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
C04-029 MB
DN2540N8-G
MOSFET N-CH 400V 170MA TO243AA
Microchip Technology
22,169
In Stock
1 : ¥8.70000
Cut Tape (CT)
2,000 : ¥6.56794
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
400 V
170mA (Tj)
0V
25Ohm @ 120mA, 0V
-
-
±20V
300 pF @ 25 V
Depletion Mode
1.6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.