Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesToshiba Semiconductor and StorageVishay Siliconix
Series
HEXFET®TrenchFET®TrenchFET® Gen IVU-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
600mA (Ta)2A (Ta)15.3A (Ta), 38.3A (Tc)18A (Tc)43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 10A, 10V15.8mOhm @ 25A, 10V25mOhm @ 9.3A, 10V300mOhm @ 1A, 10V480mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA2.4V @ 250µA3V @ 250µA4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
1.4 nC @ 10 V8.3 nC @ 10 V21.5 nC @ 10 V30 nC @ 10 V62 nC @ 10 V
Vgs (Max)
+10V, -20V+20V, -16V±20V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 10 V1000 pF @ 15 V1150 pF @ 50 V1980 pF @ 20 V
Power Dissipation (Max)
280mW (Ta)1W (Ta)3.2W (Ta), 19.8W (Tc)3.7W (Ta), 39W (Tc)71W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-50°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
D2PAKPowerPAK® 1212-8SC-70-3SOT-23F
Package / Case
PowerPAK® 1212-8SC-70, SOT-323SOT-23-3 Flat LeadsTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
252,808
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.69123
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
2A (Ta)
4V, 10V
300mOhm @ 1A, 10V
2V @ 1mA
8.3 nC @ 10 V
+10V, -20V
330 pF @ 10 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
PowerPAK 1212-8
SI7611DN-T1-GE3
MOSFET P-CH 40V 18A PPAK1212-8
Vishay Siliconix
13,712
In Stock
1 : ¥12.97000
Cut Tape (CT)
3,000 : ¥5.84464
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
18A (Tc)
4.5V, 10V
25mOhm @ 9.3A, 10V
3V @ 250µA
62 nC @ 10 V
±20V
1980 pF @ 20 V
-
3.7W (Ta), 39W (Tc)
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
Pkg 5549
SI1302DL-T1-GE3
MOSFET N-CH 30V 600MA SC70-3
Vishay Siliconix
24,962
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.16184
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
600mA (Ta)
4.5V, 10V
480mOhm @ 600mA, 10V
3V @ 250µA
1.4 nC @ 10 V
±20V
-
-
280mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3
SC-70, SOT-323
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS3806TRLPBF
MOSFET N-CH 60V 43A D2PAK
Infineon Technologies
12,480
In Stock
1 : ¥11.16000
Cut Tape (CT)
800 : ¥6.00390
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
43A (Tc)
10V
15.8mOhm @ 25A, 10V
4V @ 50µA
30 nC @ 10 V
±20V
1150 pF @ 50 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PowerPAK 1212-8
SIS472BDN-T1-GE3
MOSFET N-CH 30V 15.3A/38.3A PPAK
Vishay Siliconix
2,236
In Stock
1 : ¥5.09000
Cut Tape (CT)
3,000 : ¥1.71220
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
15.3A (Ta), 38.3A (Tc)
4.5V, 10V
7.5mOhm @ 10A, 10V
2.4V @ 250µA
21.5 nC @ 10 V
+20V, -16V
1000 pF @ 15 V
-
3.2W (Ta), 19.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.