Single FETs, MOSFETs

Results: 10
Manufacturer
Diodes IncorporatedInfineon TechnologiesMicrochip TechnologyonsemiVishay Siliconix
Series
-HEXFET®OptiMOS™SuperFET® IIISuperFET® III, FRFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
6 V20 V30 V60 V70 V300 V650 V
Current - Continuous Drain (Id) @ 25°C
320mA (Ta)2A (Ta)2.3A (Ta)2.7A (Ta)3.9A (Tc)4A (Ta), 4A (Tc)4A (Tc)16A (Tc)75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 2.5V1.8V, 4.5V2.5V, 10V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
25mOhm @ 37.5A, 10V27.4mOhm @ 35A, 10V54mOhm @ 4.3A, 10V57mOhm @ 2.3A, 2.5V58mOhm @ 3.1A, 10V84mOhm @ 100mA, 4.5V130mOhm @ 16A, 10V130mOhm @ 4.4A, 10V1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
750mV @ 11µA1V @ 250µA1.2V @ 250µA1.4V @ 250µA1.5V @ 250µA2.3V @ 250µA4V @ 90µA4.5V @ 3mA5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V1.7 nC @ 2.5 V7.4 nC @ 10 V12 nC @ 10 V28 nC @ 10 V30 nC @ 10 V227 nC @ 10 V236 nC @ 10 V
Vgs (Max)
-6V±8V±12V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
24.5 pF @ 20 V298 pF @ 40 V529 pF @ 10 V2450 pF @ 150 V7330 pF @ 400 V7780 pF @ 400 V
Power Dissipation (Max)
270mW (Ta)300mW (Tj)500mW (Ta)1.6W (Ta), 2.8W (Tc)2W (Ta)2.8W (Tc)150W (Tc)595W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-SOT23PG-TDSON-8-1SC-70-6SOT-223-3SOT-23-3 (TO-236)TO-247-3
Package / Case
6-TSSOP, SC-88, SOT-3638-PowerTDFNTO-236-3, SC-59, SOT-23-3TO-247-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SC-70-6
SI1416EDH-T1-GE3
MOSFET N-CH 30V 3.9A SOT-363
Vishay Siliconix
43,151
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.99916
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.9A (Tc)
2.5V, 10V
58mOhm @ 3.1A, 10V
1.4V @ 250µA
12 nC @ 10 V
±12V
-
-
2.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
SOT-363
MIC94052YC6-TR
MOSFET P-CH 6V 2A SC70-6
Microchip Technology
17,588
In Stock
1 : ¥6.24000
Cut Tape (CT)
3,000 : ¥5.02823
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
6 V
2A (Ta)
1.8V, 4.5V
84mOhm @ 100mA, 4.5V
1.2V @ 250µA
-
-6V
-
-
270mW (Ta)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
SOT-223-3
ZXMN7A11GTA
MOSFET N-CH 70V 2.7A SOT223
Diodes Incorporated
8,648
In Stock
1 : ¥6.98000
Cut Tape (CT)
1,000 : ¥2.96899
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
70 V
2.7A (Ta)
4.5V, 10V
130mOhm @ 4.4A, 10V
1V @ 250µA
7.4 nC @ 10 V
±20V
298 pF @ 40 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223-3
TO-261-4, TO-261AA
TO-247-3
NVHL027N65S3F
MOSFET N-CH 650V 75A TO247-3
onsemi
29
In Stock
450 : ¥113.55096
Tube
1 : ¥164.43000
Tube
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
27.4mOhm @ 35A, 10V
5V @ 3mA
227 nC @ 10 V
±30V
7780 pF @ 400 V
-
595W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
SOT 23-3
2V7002KT1G
MOSFET N-CH 60V 320MA SOT23
onsemi
18,606
In Stock
1 : ¥2.54000
Cut Tape (CT)
3,000 : ¥0.43244
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
4.5V, 10V
1.6Ohm @ 500mA, 10V
2.3V @ 250µA
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
-
300mW (Tj)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS806NEH6327XTSA1
MOSFET N-CH 20V 2.3A SOT23-3
Infineon Technologies
67,643
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.71241
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.3A (Ta)
1.8V, 2.5V
57mOhm @ 2.3A, 2.5V
750mV @ 11µA
1.7 nC @ 2.5 V
±8V
529 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SC-70-6
SI1443EDH-T1-GE3
MOSFET P-CH 30V 4A SOT-363
Vishay Siliconix
26,140
In Stock
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.14189
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4A (Tc)
10V
54mOhm @ 4.3A, 10V
1.5V @ 250µA
28 nC @ 10 V
±12V
-
-
1.6W (Ta), 2.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
PG-TDSON-8-1
BSC13DN30NSFDATMA1
MOSFET N-CH 300V 16A TDSON-8-1
Infineon Technologies
12,038
In Stock
1 : ¥27.67000
Cut Tape (CT)
5,000 : ¥12.93793
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
300 V
16A (Tc)
10V
130mOhm @ 16A, 10V
4V @ 90µA
30 nC @ 10 V
±20V
2450 pF @ 150 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
TO-247-3
NVHL025N65S3
MOSFET N-CH 650V 75A TO247-3
onsemi
273
In Stock
1,800
Factory
1 : ¥253.83000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
25mOhm @ 37.5A, 10V
4.5V @ 3mA
236 nC @ 10 V
±30V
7330 pF @ 400 V
-
595W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
SC-70-6
SI1443EDH-T1-BE3
MOSFET P-CH 30V 4A/4A SC70-6
Vishay Siliconix
7,930
In Stock
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.14189
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4A (Ta), 4A (Tc)
-
54mOhm @ 4.3A, 10V
1.5V @ 250µA
28 nC @ 10 V
±12V
-
-
1.6W (Ta), 2.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.