Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
4A (Ta)4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 4.5V
Rds On (Max) @ Id, Vgs
38mOhm @ 3.6A, 4.5V52mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.3 nC @ 4.5 V10.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
339 pF @ 10 V808 pF @ 15 V
Power Dissipation (Max)
940mW1.4W (Ta)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMG2305UX-7
MOSFET P-CH 20V 4.2A SOT23
Diodes Incorporated
181,636
In Stock
2,040,000
Factory
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.54243
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
1.8V, 4.5V
52mOhm @ 4.2A, 4.5V
900mV @ 250µA
10.2 nC @ 4.5 V
±8V
808 pF @ 15 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMN2056U-7
MOSFET N-CHANNEL 20V 4A SOT23-3
Diodes Incorporated
66,966
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.71839
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
38mOhm @ 3.6A, 4.5V
1V @ 250µA
4.3 nC @ 4.5 V
±8V
339 pF @ 10 V
-
940mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.