Single FETs, MOSFETs

Results: 9
Manufacturer
Alpha & Omega Semiconductor Inc.Nexperia USA Inc.onsemiVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)1.3A (Ta)2.4A (Ta)3.1A (Ta), 3.6A (Tc)3.3A (Ta), 3.6A (Tc)4.8A (Tc)5.7A (Ta)60A (Tc)120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V2.5V, 4.5V2.7V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 25A, 10V10.1mOhm @ 30A, 10V26.5mOhm @ 5.7A, 10V45mOhm @ 3.7A, 10V55mOhm @ 3.2A, 10V60mOhm @ 3.2A, 10V68mOhm @ 2.9A, 4.5V160mOhm @ 1.5A, 4.5V4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.4V @ 250µA1.5V @ 250mA1.5V @ 250µA2.2V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.51 nC @ 4.5 V4.76 nC @ 4.5 V5 nC @ 4.5 V6.7 nC @ 10 V7 nC @ 4.5 V10 nC @ 10 V35 nC @ 10 V190 nC @ 10 V625 nC @ 10 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
47 pF @ 30 V162 pF @ 10 V235 pF @ 15 V320 pF @ 15 V432 pF @ 15 V630 pF @ 15 V7000 pF @ 50 V22000 pF @ 10 V
Power Dissipation (Max)
300mW (Ta), 1.06W (Tc)480mW (Ta)500mW (Ta)1W (Ta), 1.7W (Tc)1.1W (Ta), 1.7W (Tc)1.4W (Ta)6.25W (Ta), 104W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PowerPAK® SO-8SOT-23SOT-23-3SOT-23-3 (TO-236)TO-236ABTO-263 (D2PAK)
Package / Case
3-SMD, SOT-23-3 VariantPowerPAK® SO-8TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2304DDS-T1-GE3
MOSFET N-CH 30V 3.3A/3.6A SOT23
Vishay Siliconix
48,656
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.90834
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.3A (Ta), 3.6A (Tc)
4.5V, 10V
60mOhm @ 3.2A, 10V
2.2V @ 250µA
6.7 nC @ 10 V
±20V
235 pF @ 15 V
-
1.1W (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
AO3400A
MOSFET N-CH 30V 5.7A SOT23-3L
Alpha & Omega Semiconductor Inc.
754,814
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.80145
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
30 V
5.7A (Ta)
2.5V, 10V
26.5mOhm @ 5.7A, 10V
1.5V @ 250µA
7 nC @ 4.5 V
±12V
630 pF @ 15 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
SOT-23-3
NDS331N
MOSFET N-CH 20V 1.3A SUPERSOT3
onsemi
138,771
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.20587
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.3A (Ta)
2.7V, 4.5V
160mOhm @ 1.5A, 4.5V
1V @ 250µA
5 nC @ 4.5 V
±8V
162 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-236AB
BSS138AKAR
MOSFET N-CH 60V 200MA TO236AB
Nexperia USA Inc.
21,499
In Stock
1 : ¥2.54000
Cut Tape (CT)
3,000 : ¥0.43244
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200mA (Ta)
10V
4.5Ohm @ 100mA, 10V
1.5V @ 250mA
0.51 nC @ 4.5 V
±20V
47 pF @ 30 V
-
300mW (Ta), 1.06W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT 23-3
NTR4170NT1G
MOSFET N-CH 30V SOT23-3
onsemi
49,913
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.90962
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
2.4A (Ta)
2.5V, 10V
55mOhm @ 3.2A, 10V
1.4V @ 250µA
4.76 nC @ 4.5 V
±12V
432 pF @ 15 V
-
480mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2371EDS-T1-GE3
MOSFET P-CH 30V 4.8A SOT-23
Vishay Siliconix
17,467
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.74207
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.8A (Tc)
2.5V, 10V
45mOhm @ 3.7A, 10V
1.5V @ 250µA
35 nC @ 10 V
±12V
-
-
1W (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
PowerPAK SO-8
SI7157DP-T1-GE3
MOSFET P-CH 20V 60A PPAK SO-8
Vishay Siliconix
3,348
In Stock
1 : ¥12.23000
Cut Tape (CT)
3,000 : ¥5.04774
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
60A (Tc)
2.5V, 10V
1.6mOhm @ 25A, 10V
1.4V @ 250µA
625 nC @ 10 V
±12V
22000 pF @ 10 V
-
6.25W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SOT-23(TO-236)
SI2300DS-T1-BE3
N-CHANNEL 30-V (D-S) MOSFET
Vishay Siliconix
8,197
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥1.00045
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.1A (Ta), 3.6A (Tc)
2.5V, 4.5V
68mOhm @ 2.9A, 4.5V
1.5V @ 250µA
10 nC @ 10 V
±12V
320 pF @ 15 V
-
1.1W (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SUM70101EL-GE3
MOSFET P-CH 100V 120A TO263
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥33.41000
Cut Tape (CT)
800 : ¥20.18474
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
120A (Tc)
4.5V, 10V
10.1mOhm @ 30A, 10V
2.5V @ 250µA
190 nC @ 10 V
±20V
7000 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.