Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedonsemiPanjit International Inc.
Series
-PJW
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V50 V60 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)3A (Ta)4A (Ta)16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
47mOhm @ 16A, 10V110mOhm @ 4A, 10V120mOhm @ 2.8A, 4.5V3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.2V @ 250µA1.6V @ 250µA2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.4 nC @ 10 V5.5 nC @ 4.5 V10 nC @ 10 V80 nC @ 20 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
27 pF @ 25 V476 pF @ 10 V785 pF @ 30 V900 pF @ 25 V
Power Dissipation (Max)
350mW (Ta)1.5W (Ta)3.1W (Ta)72W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
SOT-223SOT-23-3TO-252AA
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMG2301L-7
MOSFET P-CH 20V 3A SOT23
Diodes Incorporated
184,108
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45078
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3A (Ta)
2.5V, 4.5V
120mOhm @ 2.8A, 4.5V
1.2V @ 250µA
5.5 nC @ 4.5 V
±8V
476 pF @ 10 V
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS138
MOSFET N-CH 50V 220MA SOT23-3
onsemi
31,696
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.48925
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
1.6V @ 250µA
2.4 nC @ 10 V
±20V
27 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-252AA
RFD16N05SM9A
MOSFET N-CH 50V 16A TO252AA
onsemi
7,430
In Stock
1 : ¥10.26000
Cut Tape (CT)
2,500 : ¥4.23287
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
16A (Tc)
10V
47mOhm @ 16A, 10V
4V @ 250µA
80 nC @ 20 V
±20V
900 pF @ 25 V
-
72W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-261-4, TO-261AA
PJW4P06A_R2_00001
60V P-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
3,262
In Stock
1 : ¥3.45000
Cut Tape (CT)
Cut Tape (CT)
Digi-Reel®
-
Active
P-Channel
MOSFET (Metal Oxide)
60 V
4A (Ta)
4.5V, 10V
110mOhm @ 4A, 10V
2.5V @ 250µA
10 nC @ 10 V
±20V
785 pF @ 30 V
-
3.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.