Single FETs, MOSFETs

Results: 5
Manufacturer
STMicroelectronicsVishay Siliconix
Series
MDmesh™SuperMESH5™ThunderFET®TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
150 V800 V
Current - Continuous Drain (Id) @ 25°C
3.6A (Tc)5A (Tc)7.7A (Tc)17A (Tc)37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
47.5mOhm @ 10A, 10V177mOhm @ 3A, 10V295mOhm @ 8.5A, 10V1.15Ohm @ 2.5A, 10V1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA4V @ 250µA5V @ 100µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V12 nC @ 10 V13.4 nC @ 10 V48 nC @ 10 V70 nC @ 10 V
Vgs (Max)
±20V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
230 pF @ 75 V270 pF @ 100 V360 pF @ 100 V1805 pF @ 75 V2070 pF @ 50 V
Power Dissipation (Max)
3.5W (Ta), 19W (Tc)42W (Tc)104W (Tc)190W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
PowerFlat™ (5x6)PowerPAK® SC-70-6PowerPAK® SO-8TO-263 (D2PAK)
Package / Case
8-PowerVDFNPowerPAK® SC-70-6PowerPAK® SO-8TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
5Results

Showing
of 5
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPak SC-70-6 Single
SIA446DJ-T1-GE3
MOSFET N-CH 150V 7.7A PPAK SC70
Vishay Siliconix
11,272
In Stock
1 : ¥5.01000
Cut Tape (CT)
3,000 : ¥1.91421
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
7.7A (Tc)
6V, 10V
177mOhm @ 3A, 10V
3.5V @ 250µA
8 nC @ 10 V
±20V
230 pF @ 75 V
-
3.5W (Ta), 19W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
8PowerVDFN
STL7N80K5
MOSFET N-CH 800V 3.6A POWERFLAT
STMicroelectronics
14,825
In Stock
1 : ¥18.72000
Cut Tape (CT)
3,000 : ¥8.44813
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
3.6A (Tc)
10V
1.2Ohm @ 3A, 10V
5V @ 100µA
13.4 nC @ 10 V
±30V
360 pF @ 100 V
-
42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (5x6)
8-PowerVDFN
D2Pak
STB18NM80
MOSFET N-CH 800V 17A D2PAK
STMicroelectronics
10,000
In Stock
1 : ¥37.19000
Cut Tape (CT)
1,000 : ¥19.24387
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
17A (Tc)
10V
295mOhm @ 8.5A, 10V
5V @ 250µA
70 nC @ 10 V
±25V
2070 pF @ 50 V
-
190W (Tc)
150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PowerPAK SO-8
SIR873DP-T1-GE3
MOSFET P-CH 150V 37A PPAK SO-8
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥12.89000
Cut Tape (CT)
3,000 : ¥5.80641
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
37A (Tc)
10V
47.5mOhm @ 10A, 10V
4V @ 250µA
48 nC @ 10 V
±20V
1805 pF @ 75 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PowerFlat 5x6
STL7LN80K5
MOSFET N-CH 800V 5A POWERFLAT
STMicroelectronics
0
In Stock
Check Lead Time
1 : ¥16.83000
Cut Tape (CT)
3,000 : ¥7.59301
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
5A (Tc)
10V
1.15Ohm @ 2.5A, 10V
5V @ 100µA
12 nC @ 10 V
±30V
270 pF @ 100 V
-
42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (5x6)
8-PowerVDFN
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.