Single FETs, MOSFETs

Results: 3
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes IncorporatedInfineon Technologies
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)12A (Tc)50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
7.8mOhm @ 50A, 10V115mOhm @ 12A, 10V120mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA2.2V @ 35µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 4.5 V20 nC @ 10 V64 nC @ 10 V
Vgs (Max)
±8V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
476 pF @ 10 V1185 pF @ 30 V4780 pF @ 25 V
Power Dissipation (Max)
1.5W (Ta)2.5W (Ta), 50W (Tc)71W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TO252-3-11SOT-23-3TO-252 (DPAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMG2301L-7
MOSFET P-CH 20V 3A SOT23
Diodes Incorporated
211,450
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45078
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3A (Ta)
2.5V, 4.5V
120mOhm @ 2.8A, 4.5V
1.2V @ 250µA
5.5 nC @ 4.5 V
±8V
476 pF @ 10 V
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
174,263
In Stock
1 : ¥5.17000
Cut Tape (CT)
2,500 : ¥1.73664
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
12A (Tc)
4.5V, 10V
115mOhm @ 12A, 10V
3V @ 250µA
20 nC @ 10 V
±20V
1185 pF @ 30 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IPD50N06S4L08ATMA2
MOSFET N-CH 60V 50A TO252-31
Infineon Technologies
7,328
In Stock
1 : ¥10.67000
Cut Tape (CT)
2,500 : ¥4.00820
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
7.8mOhm @ 50A, 10V
2.2V @ 35µA
64 nC @ 10 V
±16V
4780 pF @ 25 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.