Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V50 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V1.5V, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA1.3V @ 1mA
Vgs (Max)
±8V±10V
Input Capacitance (Ciss) (Max) @ Vds
25 pF @ 10 V370 pF @ 10 V
Power Dissipation (Max)
350mW (Ta)800mW (Ta)
Supplier Device Package
SST3TUMT3
Package / Case
3-SMD, Flat LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TUMT3
RUF025N02FRATL
MOSFET N-CH 20V 2.5A TUMT3
Rohm Semiconductor
4,965
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.92355
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.5A (Ta)
1.5V, 4.5V
54mOhm @ 2.5A, 4.5V
1.3V @ 1mA
5 nC @ 4.5 V
±10V
370 pF @ 10 V
-
800mW (Ta)
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TUMT3
3-SMD, Flat Leads
SBA120CS-AUR1A1XXX
RUC002N05HZGT116
MOSFET N-CH 50V 200MA SST3
Rohm Semiconductor
0
In Stock
Check Lead Time
1 : ¥1.97000
Cut Tape (CT)
3,000 : ¥0.32982
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
1.2V, 4.5V
-
1V @ 1mA
-
±8V
25 pF @ 10 V
-
350mW (Ta)
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.