Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes Incorporatedonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V50 V60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)380mA (Ta)10.6A (Ta), 87A (Tc)14.1A (Ta), 69.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V5V
Rds On (Max) @ Id, Vgs
7.9mOhm @ 20A, 10V10mOhm @ 20A, 10V2.8Ohm @ 250mA, 10V3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id
1.5V @ 1mA1.5V @ 250µA2V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.9 nC @ 10 V30 nC @ 10 V33.5 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
23.2 pF @ 25 V50 pF @ 25 V1925 pF @ 30 V2078 pF @ 30 V
Power Dissipation (Max)
225mW (Ta)300mW (Ta)2.3W (Ta)2.4W (Ta), 56.8W (Tc)
Supplier Device Package
PowerDI5060-8SOT-23-3 (TO-236)SOT-323
Package / Case
8-PowerTDFNSC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
BSS138LT1G
MOSFET N-CH 50V 200MA SOT23-3
onsemi
135,414
In Stock
996,000
Factory
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.52959
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
5V
3.5Ohm @ 200mA, 5V
1.5V @ 1mA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-323
DMN63D8LW-13
MOSFET N-CH 30V 380MA SOT323
Diodes Incorporated
170,222
In Stock
1 : ¥1.97000
Cut Tape (CT)
10,000 : ¥0.25232
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
380mA (Ta)
2.5V, 10V
2.8Ohm @ 250mA, 10V
1.5V @ 250µA
0.9 nC @ 10 V
±20V
23.2 pF @ 25 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-323
SC-70, SOT-323
DMPH4015SPSQ-13
DMT6009LPS-13
MOSFET N-CHA 60V 10.6A POWERDI
Diodes Incorporated
3,236
In Stock
1 : ¥8.62000
Cut Tape (CT)
2,500 : ¥3.56535
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
10.6A (Ta), 87A (Tc)
4.5V, 10V
10mOhm @ 20A, 10V
2V @ 250µA
33.5 nC @ 10 V
±16V
1925 pF @ 30 V
-
2.3W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerDI5060-8
8-PowerTDFN
DMPH4015SPSQ-13
DMT68M8LPS-13
MOSFET N-CH 60V PWRDI5060
Diodes Incorporated
1,265
In Stock
10,000
Factory
1 : ¥6.24000
Cut Tape (CT)
2,500 : ¥2.35732
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
14.1A (Ta), 69.2A (Tc)
4.5V, 10V
7.9mOhm @ 20A, 10V
3V @ 250µA
30 nC @ 10 V
±20V
2078 pF @ 30 V
-
2.4W (Ta), 56.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerDI5060-8
8-PowerTDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.