Single FETs, MOSFETs

Results: 4
Manufacturer
Nexperia USA Inc.Toshiba Semiconductor and StorageVishay Siliconix
Series
TrenchFET®TrenchMOS™U-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
2.1A (Ta)6A (Ta)49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V1.5V, 4.5V4V, 10V5V
Rds On (Max) @ Id, Vgs
21.5mOhm @ 15A, 10V36mOhm @ 5A, 10V75mOhm @ 1A, 4.5V76mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250µA1V @ 250µA2.1V @ 1mA2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 4.5 V9.3 nC @ 10 V19 nC @ 8 V35.8 nC @ 5 V
Vgs (Max)
±5V±8V±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 10 V550 pF @ 10 V615 pF @ 10 V4640 pF @ 25 V
Power Dissipation (Max)
500mW (Ta)1.2W (Ta)147W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
4-MicrofootLFPAK56, Power-SO8SOT-23F
Package / Case
4-XFBGA4-XFBGA, CSPBGASC-100, SOT-669SOT-23-3 Flat Leads
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
43,501
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.15106
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
6A (Ta)
4V, 10V
36mOhm @ 5A, 10V
2.5V @ 100µA
9.3 nC @ 10 V
±20V
550 pF @ 10 V
-
1.2W (Ta)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SI8824EDB-T2-E1
SI8824EDB-T2-E1
MOSFET N-CH 20V 2.1A MICROFOOT
Vishay Siliconix
28,938
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.90574
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.1A (Ta)
1.2V, 4.5V
75mOhm @ 1A, 4.5V
800mV @ 250µA
6 nC @ 4.5 V
±5V
400 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
4-Microfoot
4-XFBGA, CSPBGA
LFPAK56/POWER-SO8/SOT669
BUK9Y22-100E,115
MOSFET N-CH 100V 49A LFPAK56
Nexperia USA Inc.
6,186
In Stock
1 : ¥10.51000
Cut Tape (CT)
1,500 : ¥4.60227
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
49A (Tc)
5V
21.5mOhm @ 15A, 10V
2.1V @ 1mA
35.8 nC @ 5 V
±10V
4640 pF @ 25 V
-
147W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
4-XFBGA
SI8817DB-T2-E1
MOSFET P-CH 20V 4MICROFOOT
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥1.25480
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.1A (Ta)
1.5V, 4.5V
76mOhm @ 1A, 4.5V
1V @ 250µA
19 nC @ 8 V
±8V
615 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
4-Microfoot
4-XFBGA
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of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.