Single Bipolar Transistors

Results: 2
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
500 mA600 mA
Voltage - Collector Emitter Breakdown (Max)
40 V80 V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
10nA (ICBO)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA, 1V100 @ 150mA, 10V
Power - Max
250 mW460 mW
Frequency - Transition
50MHz300MHz
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
3-XFDFNTO-236-3, SC-59, SOT-23-3
Supplier Device Package
TO-236ABX2-DFN1006-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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of 2
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
TO-236AB
PMBTA56,215
TRANS PNP 80V 0.5A TO236AB
Nexperia USA Inc.
157,856
In Stock
1 : ¥1.23000
Cut Tape (CT)
3,000 : ¥0.20946
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
500 mA
80 V
250mV @ 10mA, 100mA
50nA (ICBO)
100 @ 100mA, 1V
250 mW
50MHz
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
X2-DFN1006-3
MMBT2222ALP4-7B
TRANS NPN 40V 0.6A 3DFN
Diodes Incorporated
693,447
In Stock
100,000
Factory
1 : ¥1.81000
Cut Tape (CT)
10,000 : ¥0.20525
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
600 mA
40 V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
460 mW
300MHz
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
3-XFDFN
X2-DFN1006-3
Showing
of 2

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.